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Semiconductor Interfaces at the Nanoscale
4.5 out of 5 stars
13 Oct 2005 | Online Presentations | Contributor(s): David Janes
The trend in downscaling of electronic devices and the need to add functionalities such as sensing and nonvolatile memory to existing circuitry dictate that new approaches be developed for device...
Sheikh Aamir Ahsan
Simple Theory of the Ballistic MOSFET
5.0 out of 5 stars
19 Oct 2005 | Online Presentations | Contributor(s): Mark Lundstrom
Silicon nanoelectronics has become silicon nanoelectronics, but we
still analyze, design, and think about MOSFETs in more or less in the
same way that we did 30 years ago. In this talk, I...
Simulating Quantum Transport in Nanoscale Transistors: Real versus Mode-Space Approaches
0.0 out of 5 stars
28 Sep 2006 | Papers | Contributor(s): Zhibin Ren, Supriyo Datta, Mark Lundstrom, Ramesh Venugopal, D. Jovanovic
In this paper, we present a computationally efficient, two-dimensional quantum mechanical sim-
ulation scheme for modeling electron transport in thin body, fully depleted, n-channel, silicon-...
Simulator for a T-stub transistor in a magnetic field
27 Aug 2010 | Tools | Contributor(s): Massimo Macucci
Simulates transport and shot noise in a t-stub transistor in the presence of a magnetic field
Surface Analysis of Organic Monlayers Using FTIR and XPS
14 Aug 2006 | Online Presentations | Contributor(s): Jamie Nipple, Michael Toole, David Janes
Current research concerning self-assembled monolayers (SAM) focuses on the fabrication of microelectronics utilizing a semiconductor/molecule/metal junction. This study seeks to investigate...
SURI 2003 Conference
21 Apr 2004 | Workshops
2003 SURI Conference Proceedings
The Elusive Spin Transistor
11 Apr 2011 | Online Presentations | Contributor(s): Supriyo Datta
This presentation is a short introductory tutorial on spin-transistors.
The Limits of CMOS Scaling from a Power-Constrained Technology Optimization Perspective
17 Oct 2006 | Online Presentations | Contributor(s): David J. Frank
As CMOS scaling progresses, it is becoming very clear that power dissipation plays a dominant role in limiting how far scaling can go. This talk will briefly describe the various physical effects...
The Long and Short of Pick-up Stick Transistors: A Promising Technology for Nano- and Macro-Electronics
11 Apr 2006 | Online Presentations | Contributor(s): Muhammad A. Alam
In recent years, there has been enormous interest in the emerging field of large-area macro-electronics, and fabricating thin-film transistors on flexible substrates. This talk will cover recent...
The Nano-MOSFET: A brief introduction
17 Aug 2007 | Online Presentations | Contributor(s): Mark Lundstrom
MOSFET channel lengths are now well below 100nm, and getting smaller,
but MOSFETs are still modeled and understood much as they were 30
years ago. Seminal work in the 1960’s laid the...
Aug 27 2009
The Transistor: From Shockley, Bardeen, and Brattain to single molecules and atoms
The Ultimate Scaling Limit - A Deterministic Single Atom Transistor
10 Mar 2015 | Online Presentations | Contributor(s): Gerhard Klimeck
A talk by Dr. Gerhard Klimeck, Director of nanoHUB.org, Purdue University, Founder of NEMOco, LLC @ the University of Michigan.
Theory and characterization of random defect formation and its implication in variability of nanoscale transistors
30 Sep 2011 | Papers | Contributor(s): Ahmad Ehteshamul Islam
Over the last 50 years, carrier transport has been the central research topic in the semiconductor area. The outcome was a dramatic improvement in the performance of a transistor, which is one of...
Theory of Ballistic Nanotransistors
27 Nov 2002 | Papers | Contributor(s): Anisur Rahman, Jing Guo, Supriyo Datta, Mark Lundstrom
Numerical simulations are used to guide the development of a simple analytical theory for ballistic field-effect transistors. When two-dimensional electrostatic effects are small, (and when the...
Thermal Microsystems for On-Chip Thermal Engineering
04 Apr 2006 | Online Presentations | Contributor(s): Suresh V. Garimella
Electro-thermal co-design at the micro- and nano-scales is critical for
achieving desired performance and reliability in microelectronic circuits.
Emerging thermal microsystems technologies...
3.0 out of 5 stars
25 May 2005 | Online Presentations | Contributor(s): Mark Lundstrom
The transistor is the basic element of electronic systems. The integrated circuits inside today's personal computers, cell phones, PDA's, etc., contain hundreds of millions of transistors on a...
Tunnel FETs - Device Physics and Realizations
10 Jul 2013 | Online Presentations | Contributor(s): Joachim Knoch
Here, the operating principles of TFETs will be discussed in detail and experimental realizations as well as simulation results will be presented. In particular, the role of the injecting source...
Tunneling in an Nanometer-Scaled Transistor
25 Jan 2011 | Animations | Contributor(s): Gerhard Klimeck, Mathieu Luisier, Neerav Kharche, George A. Howlett, Insoo Woo, David Ebert
Electrons tunneling through the gate of an ultra-scaled transistor.