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Simulating Quantum Transport in Nanoscale Transistors: Real versus Mode-Space Approaches
0.0 out of 5 stars
28 Sep 2006 | Papers | Contributor(s): Zhibin Ren, Supriyo Datta, Mark Lundstrom, Ramesh Venugopal, D. Jovanovic
In this paper, we present a computationally efficient, two-dimensional quantum mechanical sim-
ulation scheme for modeling electron transport in thin body, fully depleted, n-channel, silicon-...
Simulator for a T-stub transistor in a magnetic field
12 Mar 2010 | Tools | Contributor(s): Massimo Macucci
Simulates transport and shot noise in a t-stub transistor in the presence of a magnetic field
Surface Analysis of Organic Monlayers Using FTIR and XPS
02 Aug 2006 | Online Presentations | Contributor(s): Jamie Nipple, Michael Toole, David Janes
Current research concerning self-assembled monolayers (SAM) focuses on the fabrication of microelectronics utilizing a semiconductor/molecule/metal junction. This study seeks to investigate...
SURI 2003 Conference
07 Aug 2003 | Workshops
2003 SURI Conference Proceedings
The Elusive Spin Transistor
11 Apr 2011 | Online Presentations | Contributor(s): Supriyo Datta
This presentation is a short introductory tutorial on spin-transistors.
The Limits of CMOS Scaling from a Power-Constrained Technology Optimization Perspective
5.0 out of 5 stars
17 Oct 2006 | Online Presentations | Contributor(s): David J. Frank
As CMOS scaling progresses, it is becoming very clear that power dissipation plays a dominant role in limiting how far scaling can go. This talk will briefly describe the various physical effects...
The Long and Short of Pick-up Stick Transistors: A Promising Technology for Nano- and Macro-Electronics
11 Apr 2006 | Online Presentations | Contributor(s): Muhammad A. Alam
In recent years, there has been enormous interest in the emerging field of large-area macro-electronics, and fabricating thin-film transistors on flexible substrates. This talk will cover recent...
The Nano-MOSFET: A brief introduction
17 Aug 2007 | Online Presentations | Contributor(s): Mark Lundstrom
MOSFET channel lengths are now well below 100nm, and getting smaller,
but MOSFETs are still modeled and understood much as they were 30
years ago. Seminal work in the 1960’s laid the...
Aug 27 2009
The Transistor: From Shockley, Bardeen, and Brattain to single molecules and atoms
The Ultimate Scaling Limit - A Deterministic Single Atom Transistor
10 Mar 2015 | Online Presentations | Contributor(s): Gerhard Klimeck
A talk by Dr. Gerhard Klimeck, Director of nanoHUB.org, Purdue University, Founder of NEMOco, LLC @ the University of Michigan.
Theory and characterization of random defect formation and its implication in variability of nanoscale transistors
30 Sep 2011 | Papers | Contributor(s): Ahmad Ehteshamul Islam
Over the last 50 years, carrier transport has been the central research topic in the semiconductor area. The outcome was a dramatic improvement in the performance of a transistor, which is one of...
Theory of Ballistic Nanotransistors
27 Nov 2002 | Papers | Contributor(s): Anisur Rahman, Jing Guo, Supriyo Datta, Mark Lundstrom
Numerical simulations are used to guide the development of a simple analytical theory for ballistic field-effect transistors. When two-dimensional electrostatic effects are small, (and when the...
Thermal Microsystems for On-Chip Thermal Engineering
04 Apr 2006 | Online Presentations | Contributor(s): Suresh V. Garimella
Electro-thermal co-design at the micro- and nano-scales is critical for
achieving desired performance and reliability in microelectronic circuits.
Emerging thermal microsystems technologies...
3.0 out of 5 stars
04 Aug 2004 | Online Presentations | Contributor(s): Mark Lundstrom
The transistor is the basic element of electronic systems. The integrated circuits inside today's personal computers, cell phones, PDA's, etc., contain hundreds of millions of transistors on a...
Tunnel FETs - Device Physics and Realizations
10 Jul 2013 | Online Presentations | Contributor(s): Joachim Knoch
Here, the operating principles of TFETs will be discussed in detail and experimental realizations as well as simulation results will be presented. In particular, the role of the injecting source...
Tunneling in an Nanometer-Scaled Transistor
25 Jan 2011 | Animations | Contributor(s): Gerhard Klimeck, Mathieu Luisier, Neerav Kharche, George A. Howlett, Insoo Woo, David Ebert
Electrons tunneling through the gate of an ultra-scaled transistor.
Two-Dimensional Scattering Matrix Simulations of Si MOSFET'S
28 Jun 2013 | Papers | Contributor(s): Carl R. Huster
For many years now, solid state device simulators have been based on the drift-diffusion equations. As transistor sizes have been reduced, there has been considerable concern about the predictive...
WALLA Lecture: Electronics, Microelectronics and Nanoelectronics
06 May 2010 | Online Presentations | Contributor(s): Mark Lundstrom
The 21st century is the age of nanoelectronics and will be transformed by increasingly powerful electronic products. At the same time, new applications that apply nanoelectronics to challenges in...
What Promises do Nanotubes and Nanowires Hold for Future Nanoelectronics Applications?
18 Feb 2008 | Online Presentations | Contributor(s): Joerg Appenzeller
Various low-dimensional materials are currently explored for future electronics applications. The common ground
for all these structures is that the surface related impact can no longer be...