
Quantum Transport: Atom to Transistor (Spring 2004)
23 May 2006   Contributor(s):: Supriyo Datta
Spring 2004 Please Note: A newer version of this course is now available and we would greatly appreciate your feedback regarding the new format and contents. Course Information Website The development of "nanotechnology" has made it possible to engineer materials and devices...

Quantumdot Cellular Automata
24 Nov 2003 
The multiple challenges presented by the problem of scaling transistor sizes are all related to the fact that transistors encode binary information by the state of a current switch. What is required is a new paradigm, still capable of providing general purpose digital computation, but which can...

recursive algorithm for NEGF in Matlab
13 Nov 2006   Contributor(s):: Dmitri Nikonov, Siyu Koswatta
This ziparchive contains two Matlab functions for the recursive solution of the partial matrix inversion and partial 3matrix multiplication used in the nonequilibrium Green’s function (NEGF) method.recuresealg3d.m works for 3diagonal matricesrecuresealgblock3d.m works for 3blockdiagonal...

Reliability Physics of Nanoscale Transistors
27 Nov 2007   Contributor(s):: Muhammad A. Alam
This course is now offered on nanoHUB as ECE 695A Reliability Physics of Nanotransistors.

RF SolidState Vibrating Transistors
15 Feb 2014   Contributor(s):: Dana Weinstein
In this talk, I will discuss the Resonant Body Transistor (RBT), which can be integrated into a standard CMOS process. The first hybrid RF MEMSCMOS resonators in Si at the transistor level of IBM’s SOI CMOS process, without any postprocessing or packaging will be described. ...

Rishabh Singhal
http://nanohub.org/members/200649

SchottkyBarrier CNFET
16 Mar 2007   Contributor(s):: Arash Hazeghi, Tejas K, H.S. Philip Wong
Simulate Carbon Nanotube field Effect transistor with Schottky Barriers

Schred
30 Mar 2006   Contributor(s):: Dragica Vasileska, Shaikh S. Ahmed, Gokula Kannan, Matteo Mannino, Gerhard Klimeck, Mark Lundstrom, Akira Matsudaira, Junzhe Geng
SCHRED simulation software calculates the envelope wavefunctions and the corresponding boundstate energies in a typical MOS, SOS and a typical SOI structure.

SelfHeating and Scaling of Silicon NanoTransistors
05 Aug 2004   Contributor(s):: Eric Pop
The most often cited technological roadblock of nanoscale electronics is the "power problem," i.e. power densities and device temperatures reaching levels that will prevent their reliable operation. Technology roadmap (ITRS) requirements are expected to lead to more heat dissipation problems,...

Semiconductor Device Education Material
28 Jan 2008   Contributor(s):: Gerhard Klimeck
This page has moved to "a Wiki page format" When we hear the words, semiconductor device, we may think first of the transistors in PCs or video game consoles, but transistors are the basic component in all of the electronic devices we use in our daily lives. Electronic systems are...

Semiconductor Interfaces at the Nanoscale
17 Oct 2005   Contributor(s):: David Janes
The trend in downscaling of electronic devices and the need to add functionalities such as sensing and nonvolatile memory to existing circuitry dictate that new approaches be developed for device structures and fabrication technologies. Various device technologies are being investigated,...

Sheikh Aamir Ahsan
http://nanohub.org/members/102143

SIDDHARTH KRISHNAN
http://nanohub.org/members/190793

Simple Theory of the Ballistic MOSFET
11 Oct 2005   Contributor(s):: Mark Lundstrom
Silicon nanoelectronics has become silicon nanoelectronics, but we still analyze, design, and think about MOSFETs in more or less in the same way that we did 30 years ago. In this talk, I will describe a simple analysis of the ballistic MOSFET. No MOSFET is truly ballistic, but approaching this...

Simulating Quantum Transport in Nanoscale Transistors: Real versus ModeSpace Approaches
28 Sep 2006   Contributor(s):: Zhibin Ren, Supriyo Datta, Mark Lundstrom, Ramesh Venugopal, D. Jovanovic
In this paper, we present a computationally efficient, twodimensional quantum mechanical sim ulation scheme for modeling electron transport in thin body, fully depleted, nchannel, silicon oninsulator transistors in the ballistic limit. The proposed simulation scheme, which solves the...

Simulator for a Tstub transistor in a magnetic field
12 Mar 2010   Contributor(s):: Massimo Macucci
Simulates transport and shot noise in a tstub transistor in the presence of a magnetic field

Smt. A. Naga Malli
Assistant Professor, Dept of ECE, Gayatri Vidya Parishad college of Engineeering(A)
http://nanohub.org/members/146115

Sofia Cunha
http://nanohub.org/members/195711

Srinivas Varma Pericherla
http://nanohub.org/members/186462

Sunjeet Jena
http://nanohub.org/members/130889