Tags: nanowires

Description

A nanowire is a nanostructure, with the diameter of the order of a nanometer. Alternatively, nanowires can be defined as structures that have a thickness or diameter constrained to tens of nanometers or less and an unconstrained length. At these scales, quantum mechanical effects are important.

Learn more about quantum dots from the many resources on this site, listed below. More information on Nanowires can be found here.

Papers (1-8 of 8)

  1. Efficiency Enhancement for Nanoelectronic Transport Simulations

    02 Feb 2014 | Papers | Contributor(s): Jun Huang

    PhD thesis of Jun Huang Continual technology innovations make it possible to fabricate electronic devices on the order of 10nm. In this nanoscale regime, quantum physics becomes critically...

    http://nanohub.org/resources/20248

  2. Quantum and Atomistic Effects in Nanoelectronic Transport Devices

    28 Jun 2013 | Papers | Contributor(s): Neophytos Neophytou

    As devices scale towards atomistic sizes, researches in silicon electronic device technology are investigating alternative structures and materials. As predicted by the International Roadmap for...

    http://nanohub.org/resources/18705

  3. Device Physics and Simulation of Silicon Nanowire Transistors

    28 Jun 2013 | Papers | Contributor(s): Jing Wang

    As the conventional silicon metal-oxide-semiconductor field-effect transistor (MOSFET) approaches its scaling limits, many novel device structures are being extensively explored. Among them, the...

    http://nanohub.org/resources/18740

  4. Landauer Approach to Thermoelectrics

    23 Jun 2013 | Papers | Contributor(s): Changwook Jeong

    Many efforts have been made to search for materials that maximize the thermoelectric (TE) figure of merit, ZT, but for decades, the improvement has been limited because of the interdependent...

    http://nanohub.org/resources/18681

  5. A CNTFET-Based Nanowired Induction Two-Way Transducers

    05 Sep 2012 | Papers | Contributor(s): Rostyslav Sklyar

    A complex of the induction magnetic field two-way nanotransducers of the different physical values for both the external and implantable interfaces in a wide range of arrays are summarized....

    http://nanohub.org/resources/15135

  6. A Three-Dimensional Quantum Simulation of Silicon Nanowire Transistors with the Effective-Mass Approximation

    30 Oct 2006 | Papers | Contributor(s): Jing Wang, Eric Polizzi, Mark Lundstrom

    The silicon nanowire transistor (SNWT) is a promising device structure for future integrated circuits, and simulations will be important for understanding its device physics and assessing its...

    http://nanohub.org/resources/1926

  7. Device Physics and Simulation of Silicon Nanowire Transistors

    28 Sep 2006 | Papers | Contributor(s): Jing Wang

    As the conventional silicon metal-oxide-semiconductor field-effect transistor (MOSFET) approaches its scaling limits, many novel device structures are being extensively explored. Among them,...

    http://nanohub.org/resources/1833

  8. Device Physics and Simulation of Silicon Nanowire Transistors

    20 May 2006 | Papers | Contributor(s): Jing Wang

    As the conventional silicon metal-oxide-semiconductor field-effect transistor (MOSFET) approaches its scaling limits, many novel device structures are being extensively explored. Among them, the...

    http://nanohub.org/resources/1313