Focused ion beam creation and templating of InAs and InAs/InP nanospikes

21 Nov 2011 | Publications | Contributor(s): Joanna Millunchick

Ion beam irradiation has been examined as a method for creating nanoscale semiconductor pillar and cone structures, but has the drawback of inaccurate nanostructure placement. We report on a method …

http://nanohub.org/resources/12538

A Three-Dimensional Quantum Simulation of Silicon Nanowire Transistors with the Effective-Mass Approximation

30 Oct 2006 | Publications | Contributor(s): Jing Wang, POLIZZI ERIC, Mark Lundstrom

The silicon nanowire transistor (SNWT) is a promising device structure for future integrated circuits, and simulations will be important for understanding its device physics and assessing its …

http://nanohub.org/resources/1926

Device Physics and Simulation of Silicon Nanowire Transistors

28 Sep 2006 | Publications | Contributor(s): Jing Wang

As the conventional silicon metal-oxide-semiconductor field-effect transistor (MOSFET) approaches its scaling limits, many novel device structures are being extensively explored. Among them, the …

http://nanohub.org/resources/1833

Device Physics and Simulation of Silicon Nanowire Transistors

20 May 2006 | Publications | Contributor(s): Jing Wang

As the conventional silicon metal-oxide-semiconductor field-effect transistor (MOSFET) approaches its scaling limits, many novel device structures are being extensively explored. Among them, the …

http://nanohub.org/resources/1313