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Threshold voltage in a nanowire MOSFET
22 Apr 2010 | | Contributor(s):: Saumitra Raj Mehrotra, SungGeun Kim, Gerhard Klimeck
Threshold voltage in a metal oxide semiconductor field-effect transistor (better known as a MOSFET) is usually defined as the gate voltage at which an inversion layer forms at the interface between the insulating layer (oxide) and the substrate (body) of the transistor. A MOSFET is said to be...
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Nanotechnology Animation Gallery
22 Apr 2010 | | Contributor(s):: Saumitra Raj Mehrotra, Gerhard Klimeck
Animations and visualization are generated with various nanoHUB.org tools to enable insight into nanotechnology and nanoscience. Click on image for detailed description and larger image download. Additional animations are also...
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ECET 499N Lecture 10: Nanomaterials
12 Apr 2010 | | Contributor(s):: Helen McNally
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Atomic Picture of Plastic Deformation in Metals: Lab Assignment Handout
19 Jan 2010 | | Contributor(s):: Alejandro Strachan
In this lab students will perform online molecular dynamics (MD) simulations of metallic nanowires deformed uniaxially and analyze the results...
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Notes on Scattering and Mobility in 1D, 2D, and 3D
06 Nov 2009 | | Contributor(s):: Dmitri Nikonov, Md. Sayed Hasan, George Bourianoff
Derivation of the phonon-limited mobility is reviewed for electrons in bulk (3D) orquantum confined (2D and 1D) semiconductor structures. Analytical estimates are madethat show the mobility in quantum confined structures is, in general, lower or no higherthan in non-confined ones.
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Metal Oxide Nanowires as Gas Sensing Elements: from Basic Research to Real World Applications
21 Sep 2009 | | Contributor(s):: andrei kolmakov
Quasi 1-D metal oxide single crystal chemiresistors are close to occupy their specific niche in the real world of solid state sensorics. Potentially, the major advantage of this kind of sensors with respect to available granular thin film sensors will be their size and stable, reproducible and...
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Illinois ECE 598EP Lecture 8 - Hot Chips: Thermal Conductivity of Solids
24 Jun 2009 | | Contributor(s):: Eric Pop, Omar N Sobh
Thermal Conductivity of SolidsTopics: Kinetic Theory of Energy Transport Simple Kinetic Theory Assumptions Phonon MFP and Scattering Time Silicon Film Thermal Conductivity Silicon Nanowire Thermal Conductivity Isotope Scattering Electron Thermal Conductivity Thermal Conductivity of Cu and Al
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Band Structure Lab: First-Time User Guide
15 Jun 2009 | | Contributor(s):: Abhijeet Paul, Benjamin P Haley, Gerhard Klimeck
This document provides useful information about Band Structure Lab. First-time users will find basic ideas about the physics behind the tool such as band formation, the Hamiltonian description, and other aspects. Additionally, we provide explanations of the input settings and the results of the...
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Band Structure Lab Demonstration: Bulk Strain
12 Jun 2009 | | Contributor(s):: Gerhard Klimeck
This video shows an electronic structure calculation of bulk Si using Band Structure Lab. Several powerful features of this tool are demonstrated.
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OMEN Nanowire Demonstration: Nanowire Simulation and Analysis
11 Jun 2009 | | Contributor(s):: Gerhard Klimeck, Benjamin P Haley
This video shows the simulation and analysis of a nanowire using OMEN Nanowire. Several powerful analytic features of this tool are demonstrated.
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KP Nanowire/UTB FET
22 Mar 2009 | | Contributor(s):: Mincheol Shin
Simulate Nanowire/UTB FETs Using KP method
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OMEN Nanowire: First-Time User Guide
21 Feb 2009 | | Contributor(s):: SungGeun Kim, Benjamin P Haley, Mathieu Luisier, Saumitra Raj Mehrotra, Gerhard Klimeck
This is the first-time user guide for OMEN Nanowire. In addition to showing how the tool operates, it briefly explains what the OMEN Nanowire is, what it can do, and the input and output relationship.NCN@Purdue[1] Sung Dae Suk, et. al., IEDM, 2005, "High Performance 5nm radius Twin Silicon...
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OMEN Nanowire
02 Sep 2008 | | Contributor(s):: SungGeun Kim, Mathieu Luisier, Benjamin P Haley, Abhijeet Paul, Saumitra Raj Mehrotra, Gerhard Klimeck, Hesameddin Ilatikhameneh
Full-band 3D quantum transport simulation in nanowire structure
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Lecture 2: Thresholds, Islands, and Fractals
04 Nov 2008 | | Contributor(s):: Muhammad A. Alam
Three basic concepts of the percolation theory – namely, percolation threshold, cluster size distribution, and fractal dimension – are defined and methods to calculate them are illustrated via elementary examples. These three concepts will form the theoretical foundation for discussion in Lecture...
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Lecture 1: Percolation in Electronic Devices
04 Nov 2008 | | Contributor(s):: Muhammad A. Alam
Even a casual review of modern electronics quickly convinces everyone that randomness of geometrical parameters must play a key role in understanding the transport properties. Despite the diversity of these phenomena however, the concepts percolation theory provides a broad theoretical framework...
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Percolation Theory
03 Nov 2008 | | Contributor(s):: Muhammad A. Alam
The electronic devices these days have become so small that the number of dopant atoms in the channel of a MOFET transistor, the number of oxide atoms in its gate dielectric, the number silicon- or metal crystals in nanocrystal Flash memory, the number of Nanowires in a flexible nanoNET...
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ABACUS - Assembly of Basic Applications for Coordinated Understanding of Semiconductors
16 Jul 2008 | | Contributor(s):: Xufeng Wang, Daniel Mejia, Dragica Vasileska, Gerhard Klimeck
One-stop-shop for teaching semiconductor devices
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Can we define unique effective masses in Si nanowires?
06 Jul 2008 | | Contributor(s):: Dragica Vasileska, Gerhard Klimeck
This exercise teaches the users that for small nanostructures the concept of the effective mass becomes vague and in order to properly describe nanostructures one has to take into account the numerically calculated dispersion relation. This is clearly illustrated on the example of Si nanowires...
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Some Important Aspects of the Chemistry of Nanomaterials
01 Jul 2008 | | Contributor(s):: C.N.R. Rao
Keynote address for the launch of the Center for Analytical Instrumentation Development.
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BNC Annual Research Review: Thin-Film Electronics using Nanowire Transistors
06 Jun 2008 | | Contributor(s):: David Janes
This presentation is part of a collection of presentations describing the projects, people, and capabilities enhanced by research performed in the Birck Center, and a look at plans for the upcoming year.