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A nanowire is a nanostructure, with the diameter of the order of a nanometer. Alternatively, nanowires can be defined as structures that have a thickness or diameter constrained to tens of nanometers or less and an unconstrained length. At these scales, quantum mechanical effects are important.
Learn more about quantum dots from the many resources on this site, listed below. More information on Nanowires can be found here.
Lecture 1: Percolation in Electronic Devices
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04 Nov 2008 | | Contributor(s):: Muhammad A. Alam
Even a casual review of modern electronics quickly convinces everyone that randomness of geometrical parameters must play a key role in understanding the transport properties. Despite the diversity of these phenomena however, the concepts percolation theory provides a broad theoretical framework...
03 Nov 2008 | | Contributor(s):: Muhammad A. Alam
The electronic devices these days have become so small that the number of dopant atoms in the channel of a MOFET transistor, the number of oxide atoms in its gate dielectric, the number silicon- or metal crystals in nanocrystal Flash memory, the number of Nanowires in a flexible nanoNET...
ABACUS - Assembly of Basic Applications for Coordinated Understanding of Semiconductors
16 Jul 2008 | | Contributor(s):: Xufeng Wang, Dragica Vasileska, Gerhard Klimeck
One-stop-shop for teaching semiconductor device education
Can we define unique effective masses in Si nanowires?
06 Jul 2008 | | Contributor(s):: Dragica Vasileska, Gerhard Klimeck
This exercise teaches the users that for small nanostructures the concept of the effective mass becomes vague and in order to properly describe nanostructures one has to take into account the numerically calculated dispersion relation. This is clearly illustrated on the example of Si nanowires...
Some Important Aspects of the Chemistry of Nanomaterials
01 Jul 2008 | | Contributor(s):: C.N.R. Rao
Keynote address for the launch of the Center for Analytical Instrumentation Development.
BNC Annual Research Review: Thin-Film Electronics using Nanowire Transistors
06 Jun 2008 | | Contributor(s):: David Janes
This presentation is part of a collection of presentations describing the projects, people, and capabilities enhanced by research performed in the Birck Center, and a look at plans for the upcoming year.
Which tool can I used to do harmonic analysis of a ZnO nanowire?
Closed | Responses: 1
I am trying to study the applied voltage-displacement relationship for a ZnO nanowire. In the end I want to find...
The electrical field from the gate of CNFET can not affect the transistor.
Open | Responses: 2
I tried to fabricate the Carbon nanotube field effect transistor (CNFET) for around half a year, however, none of them is working till now. The main problem was the source to...
Nanowire: First-Time User Guide
05 May 2008 | | Contributor(s):: Gerhard Klimeck, Saumitra Raj Mehrotra
Nanowire is a simulation tool for silicon nanowire FET's in the nanometer regime (diameter
Basma Mohamad Zeineddine EL ZEIN
MuGFET: First-Time User Guide
28 Apr 2008 | | Contributor(s):: SungGeun Kim, Sriraman Damodaran, Benjamin P Haley, Gerhard Klimeck
MuGFET is a simulation tool for nano-scale multi-gate FET structures.This document provides instructions on how to use MuGFET. MuGFET users can use also the PROPHET or the PADRE tool. Either of these provide self-consistent solutions to the Poisson and drift-diffusion equation.At the nanometer...
Exploring CMOS-Nano Hybrid Technology in Three Dimensions
31 Mar 2008 | | Contributor(s):: Wei Wang
CMOS-nano hybrid technology incorporate the advantages of both traditional CMOS and novel nanowire/nanotube structures, which will enhance future IC performances and create long-term breakthroughs. The CMOS-nano hybrid IC can be efficiently fabricated using the 3D integration approach. This talk...
31 Mar 2008 | | Contributor(s):: Sanket S Mahajan, Ganesh Subbarayan, Xufeng Wang
Code to perform Molecular Dynamics (MD) Simulations
Nanoelectronic Modeling: Multimillion Atom Simulations, Transport, and HPC Scaling to 23,000 Processors
07 Mar 2008 | | Contributor(s):: Gerhard Klimeck
Future field effect transistors will be on the same length scales as “esoteric” devices such as quantum dots, nanowires, ultra-scaled quantum wells, and resonant tunneling diodes. In those structures the behavior of carriers and their interaction with their environment need to be fundamentally...
What Promises do Nanotubes and Nanowires Hold for Future Nanoelectronics Applications?
18 Feb 2008 | | Contributor(s):: Joerg Appenzeller
Various low-dimensional materials are currently explored for future electronics applications. The common ground for all these structures is that the surface related impact can no longer be ignored – the common approach applied to predict properties of bulk-type three-dimensional (3D) materials....
Ferroelectric BaTiO3 Nanowires: Synthesis, Properties, and Device Applications
12 Feb 2008 | | Contributor(s):: Zhaoyu Wang
One dimensional ferroelectric nanowires have attracted much attention due to its interests in fundamental physics and potential applications in Nanoelectromechanical Systems (NEMS), non-volatile ferroelectric memories, and sensors. Domain structure is the most important property of ferroelectric...
Multiphase Gallium Nitride Nanowires and Nanocircuits
04 Feb 2008 | | Contributor(s):: Virginia M. Ayres
Catalyst-free vapor-solid nanowire growth, a newly described method for the production of nanowires compatible with a wide variety of semiconductor materials, has been used to produce novel multiphase zinc-blende/wurtzite gallium nitride nanowires. Orientation relation-ships within the...
Exploring Physical and Chemical control of molecular conductance: A computational study
31 Jan 2008 | | Contributor(s):: Barry D. Dunietz
Can numerical “experiments” INSPIRE physical experiments?
20 Dec 2007 | | Contributor(s):: Supriyo Datta
This presentation was one of 13 presentations in the one-day forum, "Excellence in Computer Simulation," which brought together a broad set of experts to reflect on the future of computational science and engineering.