Tags: naontransistors

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  1. Engineering Disorder in Opto-Electronics

    05 Dec 2012 | | Contributor(s):: Jacob B. Khurgin

    GaN is a wide bandgap material which can on one hand withstand high power and high temperature operating conditions, and on the other hand has high saturation velocity needed for high frequency operation. This tremendous potential has not been fully realized yet and in this talk it will be shown...