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ECE 695A Lecture 10: NBTI Time Dependence -- Frequency and Duty Cycle Dependencies
06 Feb 2013 | Online Presentations | Contributor(s): Muhammad Alam
NBTI stress and relaxation by R-D model
Frequency independence and lifetime projection
Duty cycle dependence
The magic of measurement
ECE 695A Lecture 10A: Appendix - Reflection on R-D Equation
08 Feb 2013 | Online Presentations | Contributor(s): Muhammad Alam
ECE 695A Lecture 11: Temperature Dependence of NBTI
07 Feb 2013 | Online Presentations | Contributor(s): Muhammad Alam
Review: Temperature activation & NBTI
Temperature dependent forward/reverse rates
Temperature dependence of diffusion coefficient
Material dependence of activation...
ECE 695A Lecture 11R: Review Questions
Does Einstein relationship hold for activated diffusion?
People argue that the forward dissociation and reverse passivation have similar activation barriers. Would you...
ECE 695A Lecture 12: Field Dependence of NBTI
Background: Field dependent degradation
Components of field-dependent dissociation:
Voltage acceleration factors
ECE 695A Lecture 12R: Review Questions
Explain the difference between local field and global field within an oxide.
Explain physically why electric field decreases bond strength.
How does the dissociation...
ECE 695A Lecture 13R: Review Questions
19 Feb 2013 | Online Presentations | Contributor(s): Muhammad Alam
Both SiH and SiO are involved in HCI degradation. Give two evidences.
Why doesn’t HCI occur during NBTI stress condition?
I suggested that HCI curve can shifted...
ECE 695A Lecture 18R: Review Questions
01 Mar 2013 | Online Presentations | Contributor(s): Muhammad Alam
Between DCIV and CP methods, which one is easier and why?
In what ways are CP and DCIV methods better at characterizing traps compared to C-V methods?
What are the...
ECE 695A Lecture 19R: Review Questions
04 Mar 2013 | Online Presentations | Contributor(s): Muhammad Alam
If a signal disappears from ESR because of negative-U configuration, can it be detected by SDR or EDSR methods?
What is the relationship between Gauss and Tesla as units...
ECE 695A Lecture 21R: Review Questions
12 Mar 2013 | Online Presentations | Contributor(s): Muhammad Alam
What is the name of the failure distribution that we expect for thin oxides?
For thin oxides, is PMOS or NMOS more of a concern in modern transistors?
What is DBIE? When...
ECE 695A Lecture 8: Phenomenological Observations for NBTI
01 Feb 2013 | Online Presentations | Contributor(s): Muhammad Alam
Time, voltage, temperature dependencies
ECE 695A Lecture 8R: Review Questions
What is the distinction between BTI and NBTI phenomena?
What does it mean that a process is thermally activated?
What is the difference between parametric failure and catastrophic failure?...
ECE 695A Lecture 9: NBTI Time Dependence -- Stress Phase
Background: Time-dependent degradation
The Reaction-Diffusion model
Approximate solution to R-D model in stress phase
Degradation free transistors
ECE 695A Lecture 9R: Review Questions
Does NBTI power-exponent depend on voltage or temperature?
Do you expect the NBTI power-exponent to be larger or smaller if trapping is important?
How does one know that...
Mobility Variation Due to Interface Trap Generation in Plasma Oxynitrided PMOS Devices
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01 Jul 2008 | Online Presentations | Contributor(s): Ahmad Ehteshamul Islam, Souvik Mahapatra, Muhammad A. Alam
Mobility degradation due to generation of interface
traps, Δµeff(NIT), is a well-known phenomenon that has been
theoretically interpreted by several mobility models. Based on
On the Resolution of Ultra-fast NBTI Measurements and Reaction-Diffusion Theory
30 Dec 2009 | Online Presentations | Contributor(s): Ahmad Ehteshamul Islam, Souvik Mahapatra, Muhammad A. Alam
Reaction-Diffusion (R-D) theory, well-known to successfully explain most features of NBTI stress, is perceived to fail in explaining NBTI recovery. Several efforts have been made to understand...
On the Validity of the Harmonic Potential Energy Surface Approximation for Nonradiative Multiphonon Charge Transitions in Oxide Defects
09 Mar 2016 | Online Presentations | Contributor(s): Yannick Wimmer, Wolfgang Goes
IWCE Presentation. Hole trapping in oxide defects in the gate insulator of MOSFET transistors has been linked to a wide range of phenomena like random telegraph noise, 1/f noise, bias temperature...