Tags: NBTI

Online Presentations (1-17 of 17)

  1. ECE 695A Lecture 10: NBTI Time Dependence -- Frequency and Duty Cycle Dependencies

    06 Feb 2013 | | Contributor(s):: Muhammad Alam

    Outline:NBTI stress and relaxation by R-D modelFrequency independence and lifetime projectionDuty cycle dependenceThe magic of measurementConclusions

  2. ECE 695A Lecture 10A: Appendix - Reflection on R-D Equation

    08 Feb 2013 | | Contributor(s):: Muhammad Alam

  3. ECE 695A Lecture 11: Temperature Dependence of NBTI

    07 Feb 2013 | | Contributor(s):: Muhammad Alam

    Outline:Review: Temperature activation & NBTITemperature dependent forward/reverse ratesTemperature dependence of diffusion coefficientMaterial dependence of activation energyConclusion

  4. ECE 695A Lecture 11R: Review Questions

    08 Feb 2013 | | Contributor(s):: Muhammad Alam

    Review Questions:Does Einstein relationship hold for activated diffusion?People argue that the forward dissociation and reverse passivation have similar activation barriers. Would you support the argument?What assumption did I make regarding diffusion of H in SiO2 that makes the derivation...

  5. ECE 695A Lecture 12: Field Dependence of NBTI

    08 Feb 2013 | | Contributor(s):: Muhammad Alam

    Outline:Background: Field dependent degradationComponents of field-dependent dissociation:Interpreting experimentsVoltage acceleration factorsConclusion

  6. ECE 695A Lecture 12R: Review Questions

    08 Feb 2013 | | Contributor(s):: Muhammad Alam

    Review Questions:Explain the difference between local field and global field within an oxide. Explain physically why electric field decreases bond strength.How does the dissociation process becomes non-Arrhenius?Do you think the diffusion and repassivation will also become non-Arrhenius when...

  7. ECE 695A Lecture 13R: Review Questions

    19 Feb 2013 | | Contributor(s):: Muhammad Alam

    Review Questions:Both SiH and SiO are involved in HCI degradation. Give two evidences.Why doesn’t HCI occur during NBTI stress condition?I suggested that HCI curve can shifted horizontally to form a universal curve, do you believe that I can do a corresponding vertical shift to form the...

  8. ECE 695A Lecture 18R: Review Questions

    01 Mar 2013 | | Contributor(s):: Muhammad Alam

    Review Questions:Between DCIV and CP methods, which one is easier and why?In what ways are CP and DCIV methods better at characterizing traps compared to C-V methods?What are the problems of using CP, DCIV, C-V methods for NBTI measurements?Which method does not suffer from the same problem as...

  9. ECE 695A Lecture 19R: Review Questions

    04 Mar 2013 | | Contributor(s):: Muhammad Alam

    Review Questions::If a signal disappears from ESR because of negative-U configuration, can it be detected by SDR or EDSR methods?What is the relationship between Gauss and Tesla as units of magnetic field?Was the original SDR method for bulk or interface traps?What is the relationship between...

  10. ECE 695A Lecture 21R: Review Questions

    12 Mar 2013 | | Contributor(s):: Muhammad Alam

    Review Questions:What is the name of the failure distribution that we expect for thin oxides?For thin oxides, is PMOS or NMOS more of a concern in modern transistors?What is DBIE? When does it occur? Can the transistor be still functional ?In what ways is TDDB compare with NBTI and HCI...

  11. ECE 695A Lecture 8: Phenomenological Observations for NBTI

    01 Feb 2013 | | Contributor(s):: Muhammad Alam

    Outline:Qualitative observationsTime, voltage, temperature dependenciesMaterial dependenceCircuit implications

  12. ECE 695A Lecture 8R: Review Questions

    01 Feb 2013 | | Contributor(s):: Muhammad Alam

    What is the distinction between BTI and NBTI phenomena?What does it mean that a process is thermally activated?What is the difference between parametric failure and catastrophic failure? Give examples. What are the time-characteristics of trapping, BTI, and NBTI?Which device will have poorer...

  13. ECE 695A Lecture 9: NBTI Time Dependence -- Stress Phase

    06 Feb 2013 | | Contributor(s):: Muhammad Alam

    Outline:Background: Time-dependent degradationThe Reaction-Diffusion modelApproximate solution to R-D model in stress phaseDegradation free transistorsConclusions

  14. ECE 695A Lecture 9R: Review Questions

    08 Feb 2013 | | Contributor(s):: Muhammad Alam

    Review Questions:Does NBTI power-exponent depend on voltage or temperature?Do you expect the NBTI power-exponent to be larger or smaller if trapping is important?How does one know that the diffusing species is neutral?How would the time-exponent different for a surround gate MOSFET vs. planar...

  15. Mobility Variation Due to Interface Trap Generation in Plasma Oxynitrided PMOS Devices

    30 Jun 2008 | | Contributor(s):: Ahmad Ehteshamul Islam, Souvik Mahapatra, Muhammad A. Alam

    Mobility degradation due to generation of interfacetraps, Δµeff(NIT), is a well-known phenomenon that has beentheoretically interpreted by several mobility models. Based onthese analysis, there is a general perception that Δµeff(NIT) isrelatively insignificant (compared to Δµeff due to...

  16. On the Resolution of Ultra-fast NBTI Measurements and Reaction-Diffusion Theory

    16 Dec 2009 | | Contributor(s):: Ahmad Ehteshamul Islam, Souvik Mahapatra, Muhammad A. Alam

    Reaction-Diffusion (R-D) theory, well-known to successfully explain most features of NBTI stress, is perceived to fail in explaining NBTI recovery. Several efforts have been made to understand differences between NBTI relaxation measured using ultra-fast methods and that predicted by R-D theory....

  17. On the Validity of the Harmonic Potential Energy Surface Approximation for Nonradiative Multiphonon Charge Transitions in Oxide Defects

    17 Feb 2016 | | Contributor(s):: Yannick Wimmer, Wolfgang Goes

    IWCE Presentation. Hole trapping in oxide defects in the gate insulator of MOSFET transistors has been linked to a wide range of phenomena like random telegraph noise, 1/f noise, bias temperature instability (BTI), stress-induced leakage current and hot carrier degradation [1–5]....