ECE 695A Lecture 10: NBTI Time Dependence -- Frequency and Duty Cycle Dependencies

06 Feb 2013 | Online Presentations | Contributor(s): Muhammad Alam

Outline: NBTI stress and relaxation by R-D model Frequency independence and lifetime projection Duty cycle dependence The magic of measurement Conclusions

https://nanohub.org/resources/16668

ECE 695A Lecture 10A: Appendix - Reflection on R-D Equation

08 Feb 2013 | Online Presentations | Contributor(s): Muhammad Alam

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https://nanohub.org/resources/16787

ECE 695A Lecture 11: Temperature Dependence of NBTI

07 Feb 2013 | Online Presentations | Contributor(s): Muhammad Alam

Outline: Review: Temperature activation NBTI Temperature dependent forward/reverse rates Temperature dependence of diffusion coefficient Material dependence of activation energy Conclusion

https://nanohub.org/resources/16774

ECE 695A Lecture 11R: Review Questions

08 Feb 2013 | Online Presentations | Contributor(s): Muhammad Alam

Review Questions: Does Einstein relationship hold for activated diffusion? People argue that the forward dissociation and reverse passivation have similar activation barriers. Would you support …

https://nanohub.org/resources/16786

ECE 695A Lecture 12: Field Dependence of NBTI

08 Feb 2013 | Online Presentations | Contributor(s): Muhammad Alam

Outline: Background: Field dependent degradation Components of field-dependent dissociation: Interpreting experiments Voltage acceleration factors Conclusion

https://nanohub.org/resources/16789

ECE 695A Lecture 12R: Review Questions

08 Feb 2013 | Online Presentations | Contributor(s): Muhammad Alam

Review Questions: Explain the difference between local field and global field within an oxide. Explain physically why electric field decreases bond strength. How does the dissociation process …

https://nanohub.org/resources/16790

ECE 695A Lecture 13R: Review Questions

19 Feb 2013 | Online Presentations | Contributor(s): Muhammad Alam

Review Questions: Both SiH and SiO are involved in HCI degradation. Give two evidences. Why doesn’t HCI occur during NBTI stress condition? I suggested that HCI curve can shifted …

https://nanohub.org/resources/16888

ECE 695A Lecture 18R: Review Questions

01 Mar 2013 | Online Presentations | Contributor(s): Muhammad Alam

Review Questions: Between DCIV and CP methods, which one is easier and why? In what ways are CP and DCIV methods better at characterizing traps compared to C-V methods? What are the problems …

https://nanohub.org/resources/17159

ECE 695A Lecture 19R: Review Questions

04 Mar 2013 | Online Presentations | Contributor(s): Muhammad Alam

Review Questions:: If a signal disappears from ESR because of negative-U configuration, can it be detected by SDR or EDSR methods? What is the relationship between Gauss and Tesla as units of …

https://nanohub.org/resources/17196

ECE 695A Lecture 21R: Review Questions

12 Mar 2013 | Online Presentations | Contributor(s): Muhammad Alam

Review Questions: What is the name of the failure distribution that we expect for thin oxides? For thin oxides, is PMOS or NMOS more of a concern in modern transistors? What is DBIE? When …

https://nanohub.org/resources/17249

ECE 695A Lecture 8: Phenomenological Observations for NBTI

01 Feb 2013 | Online Presentations | Contributor(s): Muhammad Alam

Outline: Qualitative observations Time, voltage, temperature dependencies Material dependence Circuit implications

https://nanohub.org/resources/16665

ECE 695A Lecture 8R: Review Questions

01 Feb 2013 | Online Presentations | Contributor(s): Muhammad Alam

What is the distinction between BTI and NBTI phenomena? What does it mean that a process is thermally activated? What is the difference between parametric failure and catastrophic failure? Give …

https://nanohub.org/resources/16666

ECE 695A Lecture 9: NBTI Time Dependence -- Stress Phase

06 Feb 2013 | Online Presentations | Contributor(s): Muhammad Alam

Outline: Background: Time-dependent degradation The Reaction-Diffusion model Approximate solution to R-D model in stress phase Degradation free transistors Conclusions

https://nanohub.org/resources/16667

ECE 695A Lecture 9R: Review Questions

08 Feb 2013 | Online Presentations | Contributor(s): Muhammad Alam

Review Questions: Does NBTI power-exponent depend on voltage or temperature? Do you expect the NBTI power-exponent to be larger or smaller if trapping is important? How does one know that the …

https://nanohub.org/resources/16778

Mobility Variation Due to Interface Trap Generation in Plasma Oxynitrided PMOS Devices

30 Jun 2008 | Online Presentations | Contributor(s): Ahmad Ehteshamul Islam, Souvik Mahapatra, Muhammad A. Alam

Mobility degradation due to generation of interface traps, Δµeff(NIT), is a well-known phenomenon that has been theoretically interpreted by several mobility models. Based on these analysis, there …

https://nanohub.org/resources/4835

Modeling Interface-defect Generation (MIG)

18 Jul 2006 | Tools | Contributor(s): Ahmad Ehteshamul Islam, Haldun Kufluoglu, Muhammad A. Alam

Analyzes device reliability based on NBTI

https://nanohub.org/resources/devrel

On the Resolution of Ultra-fast NBTI Measurements and Reaction-Diffusion Theory

16 Dec 2009 | Online Presentations | Contributor(s): Ahmad Ehteshamul Islam, Souvik Mahapatra, Muhammad A. Alam

Reaction-Diffusion (R-D) theory, well-known to successfully explain most features of NBTI stress, is perceived to fail in explaining NBTI recovery. Several efforts have been made to understand …

https://nanohub.org/resources/8023

Spice3f4

14 Aug 2005 | Tools | Contributor(s): Michael McLennan

General-purpose circuit simulation program for nonlinear dc, nonlinear transient, and linear ac analysis

https://nanohub.org/resources/spice3f4