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BTI Simulator for Multi-State Model
26 Sep 2016 | Downloads | Contributor(s): Rakesh P Rao, Narendra Parihar, Sujay Desai, Souvik Mahapatra
This simulator calculates the kinetics associated with hole trapping in pre-existing gate insulator traps during Negative Bias Temperature Instability (NBTI) in SiO2 (or SiON) based Si...
BTI Simulator for Two Well Multiphonon Model
06 Sep 2016 | Downloads | Contributor(s): Rakesh P Rao, Narendra Parihar, Sujay Desai, Souvik Mahapatra
BTI Simulator for Two Well Thermionic Model
29 Aug 2016 | Downloads | Contributor(s): Rakesh P Rao, Narendra Parihar, Sujay Desai, Souvik Mahapatra
ECE 695A Lecture 10: NBTI Time Dependence -- Frequency and Duty Cycle Dependencies
06 Feb 2013 | Online Presentations | Contributor(s): Muhammad Alam
NBTI stress and relaxation by R-D model
Frequency independence and lifetime projection
Duty cycle dependence
The magic of measurement
ECE 695A Lecture 10A: Appendix - Reflection on R-D Equation
08 Feb 2013 | Online Presentations | Contributor(s): Muhammad Alam
ECE 695A Lecture 11: Temperature Dependence of NBTI
07 Feb 2013 | Online Presentations | Contributor(s): Muhammad Alam
Review: Temperature activation & NBTI
Temperature dependent forward/reverse rates
Temperature dependence of diffusion coefficient
Material dependence of activation...
ECE 695A Lecture 11R: Review Questions
Does Einstein relationship hold for activated diffusion?
People argue that the forward dissociation and reverse passivation have similar activation barriers. Would you...
ECE 695A Lecture 12: Field Dependence of NBTI
Background: Field dependent degradation
Components of field-dependent dissociation:
Voltage acceleration factors
ECE 695A Lecture 12R: Review Questions
Explain the difference between local field and global field within an oxide.
Explain physically why electric field decreases bond strength.
How does the dissociation...
ECE 695A Lecture 13R: Review Questions
19 Feb 2013 | Online Presentations | Contributor(s): Muhammad Alam
Both SiH and SiO are involved in HCI degradation. Give two evidences.
Why doesn’t HCI occur during NBTI stress condition?
I suggested that HCI curve can shifted...
ECE 695A Lecture 18R: Review Questions
01 Mar 2013 | Online Presentations | Contributor(s): Muhammad Alam
Between DCIV and CP methods, which one is easier and why?
In what ways are CP and DCIV methods better at characterizing traps compared to C-V methods?
What are the...
ECE 695A Lecture 19R: Review Questions
04 Mar 2013 | Online Presentations | Contributor(s): Muhammad Alam
If a signal disappears from ESR because of negative-U configuration, can it be detected by SDR or EDSR methods?
What is the relationship between Gauss and Tesla as units...
ECE 695A Lecture 21R: Review Questions
12 Mar 2013 | Online Presentations | Contributor(s): Muhammad Alam
What is the name of the failure distribution that we expect for thin oxides?
For thin oxides, is PMOS or NMOS more of a concern in modern transistors?
What is DBIE? When...
ECE 695A Lecture 8: Phenomenological Observations for NBTI
01 Feb 2013 | Online Presentations | Contributor(s): Muhammad Alam
Time, voltage, temperature dependencies
ECE 695A Lecture 8R: Review Questions
What is the distinction between BTI and NBTI phenomena?
What does it mean that a process is thermally activated?
What is the difference between parametric failure and catastrophic failure?...
ECE 695A Lecture 9: NBTI Time Dependence -- Stress Phase
Background: Time-dependent degradation
The Reaction-Diffusion model
Approximate solution to R-D model in stress phase
Degradation free transistors
ECE 695A Lecture 9R: Review Questions
Does NBTI power-exponent depend on voltage or temperature?
Do you expect the NBTI power-exponent to be larger or smaller if trapping is important?
How does one know that...
Mobility Variation Due to Interface Trap Generation in Plasma Oxynitrided PMOS Devices
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01 Jul 2008 | Online Presentations | Contributor(s): Ahmad Ehteshamul Islam, Souvik Mahapatra, Muhammad A. Alam
Mobility degradation due to generation of interface
traps, Δµeff(NIT), is a well-known phenomenon that has been
theoretically interpreted by several mobility models. Based on
Modeling Interface-defect Generation (MIG)
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28 Aug 2006 | Tools | Contributor(s): Ahmad Ehteshamul Islam, Haldun Kufluoglu, Muhammad A. Alam
Analyzes device reliability based on NBTI
On the Resolution of Ultra-fast NBTI Measurements and Reaction-Diffusion Theory
30 Dec 2009 | Online Presentations | Contributor(s): Ahmad Ehteshamul Islam, Souvik Mahapatra, Muhammad A. Alam
Reaction-Diffusion (R-D) theory, well-known to successfully explain most features of NBTI stress, is perceived to fail in explaining NBTI recovery. Several efforts have been made to understand...