Tags: NBTI

Resources (1-20 of 25)

  1. BTI Simulator for Gate-sided Hydrogen Release (a.k.a Dispersive-Reaction) Model

    17 Oct 2016 | | Contributor(s):: Narendra Parihar, Rakesh P Rao, Souvik Mahapatra

    This simulator calculates the kinetics associated with hydrogen release from the Gate during Negative Bias Temperature Instability (NBTI) in SiO2 (or SiON) based Si p-MOSFETs. The calculations are based on the"Gate-sided Hydrogen Release (a.k.a Dispersive-Reaction) Model". The...

  2. BTI Simulator for Multi-State Extended Non-radiative Multi-phonon Model (a.ka. Multi-State-Model)

    26 Sep 2016 | | Contributor(s):: Rakesh P Rao, Narendra Parihar, Sujay Desai, Souvik Mahapatra

    This simulator calculates the kinetics associated with hole trapping in pre-existing gate insulator traps during Negative Bias Temperature Instability (NBTI) in SiO2 (or SiON) based Si p-MOSFETs. The calculations are based on the"Multi-State Extended Non-radiative Multi-phonon...

  3. BTI Simulator for Triple-Well Model

    27 Oct 2016 | | Contributor(s):: Narendra Parihar, Rakesh P Rao, Sujay Desai, Souvik Mahapatra

    This simulator calculates the kinetics associated with trap generation during Negative Bias Temperature Instability (NBTI) in SiO2 (or SiON) based Si p-MOSFETs. The calculations are based on the"Triple-Well Model". The simulator can calculate threshold voltage shift due to...

  4. BTI Simulator for Two Well Non-radiative Multiphonon Model

    06 Sep 2016 | | Contributor(s):: Rakesh P Rao, Narendra Parihar, Sujay Desai, Souvik Mahapatra

    This simulator calculates the kinetics associated with hole trapping in pre-existing gate insulator traps during Negative Bias Temperature Instability (NBTI) in SiO2 (or SiON) based Si p-MOSFETs. The calculations are based on the"Two Well Non-radiative Multi-phonon Model". The...

  5. BTI Simulator for Two Well Thermionic Model

    29 Aug 2016 | | Contributor(s):: Rakesh P Rao, Narendra Parihar, Sujay Desai, Souvik Mahapatra

    This simulator calculates the kinetics associated with hole trapping in pre-existing gate insulator traps during Negative Bias Temperature Instability (NBTI) in SiO2 (or SiON) based Si p-MOSFETs. The calculations are based on the "Two Well Thermionic Model". The simulator can...

  6. BTI Simulator for Two-Stage Model

    27 Jun 2017 | | Contributor(s):: Rakesh P Rao, Narendra Parihar, Souvik Mahapatra

    This simulator calculates the kinetics associated with trapping and trap generation during Negative Bias Temperature Instability (NBTI) in SiO2 (or SiON) based Si p-MOSFETs. The calculations are based on the"Two-Stage Model". The simulator can calculate threshold voltage shift...

  7. ECE 695A Lecture 10: NBTI Time Dependence -- Frequency and Duty Cycle Dependencies

    06 Feb 2013 | | Contributor(s):: Muhammad Alam

    Outline:NBTI stress and relaxation by R-D modelFrequency independence and lifetime projectionDuty cycle dependenceThe magic of measurementConclusions

  8. ECE 695A Lecture 10A: Appendix - Reflection on R-D Equation

    08 Feb 2013 | | Contributor(s):: Muhammad Alam

  9. ECE 695A Lecture 11: Temperature Dependence of NBTI

    07 Feb 2013 | | Contributor(s):: Muhammad Alam

    Outline:Review: Temperature activation & NBTITemperature dependent forward/reverse ratesTemperature dependence of diffusion coefficientMaterial dependence of activation energyConclusion

  10. ECE 695A Lecture 11R: Review Questions

    08 Feb 2013 | | Contributor(s):: Muhammad Alam

    Review Questions:Does Einstein relationship hold for activated diffusion?People argue that the forward dissociation and reverse passivation have similar activation barriers. Would you support the argument?What assumption did I make regarding diffusion of H in SiO2 that makes the derivation...

  11. ECE 695A Lecture 12: Field Dependence of NBTI

    08 Feb 2013 | | Contributor(s):: Muhammad Alam

    Outline:Background: Field dependent degradationComponents of field-dependent dissociation:Interpreting experimentsVoltage acceleration factorsConclusion

  12. ECE 695A Lecture 12R: Review Questions

    08 Feb 2013 | | Contributor(s):: Muhammad Alam

    Review Questions:Explain the difference between local field and global field within an oxide. Explain physically why electric field decreases bond strength.How does the dissociation process becomes non-Arrhenius?Do you think the diffusion and repassivation will also become non-Arrhenius when...

  13. ECE 695A Lecture 13R: Review Questions

    19 Feb 2013 | | Contributor(s):: Muhammad Alam

    Review Questions:Both SiH and SiO are involved in HCI degradation. Give two evidences.Why doesn’t HCI occur during NBTI stress condition?I suggested that HCI curve can shifted horizontally to form a universal curve, do you believe that I can do a corresponding vertical shift to form the universal...

  14. ECE 695A Lecture 18R: Review Questions

    01 Mar 2013 | | Contributor(s):: Muhammad Alam

    Review Questions:Between DCIV and CP methods, which one is easier and why?In what ways are CP and DCIV methods better at characterizing traps compared to C-V methods?What are the problems of using CP, DCIV, C-V methods for NBTI measurements?Which method does not suffer from the same problem as...

  15. ECE 695A Lecture 19R: Review Questions

    04 Mar 2013 | | Contributor(s):: Muhammad Alam

    Review Questions::If a signal disappears from ESR because of negative-U configuration, can it be detected by SDR or EDSR methods?What is the relationship between Gauss and Tesla as units of magnetic field?Was the original SDR method for bulk or interface traps?What is the relationship between RTN...

  16. ECE 695A Lecture 21R: Review Questions

    12 Mar 2013 | | Contributor(s):: Muhammad Alam

    Review Questions:What is the name of the failure distribution that we expect for thin oxides?For thin oxides, is PMOS or NMOS more of a concern in modern transistors?What is DBIE? When does it occur? Can the transistor be still functional ?In what ways is TDDB compare with NBTI and HCI...

  17. ECE 695A Lecture 8: Phenomenological Observations for NBTI

    01 Feb 2013 | | Contributor(s):: Muhammad Alam

    Outline:Qualitative observationsTime, voltage, temperature dependenciesMaterial dependenceCircuit implications

  18. ECE 695A Lecture 8R: Review Questions

    01 Feb 2013 | | Contributor(s):: Muhammad Alam

    What is the distinction between BTI and NBTI phenomena?What does it mean that a process is thermally activated?What is the difference between parametric failure and catastrophic failure? Give examples. What are the time-characteristics of trapping, BTI, and NBTI?Which device will have poorer NBTI...

  19. ECE 695A Lecture 9: NBTI Time Dependence -- Stress Phase

    06 Feb 2013 | | Contributor(s):: Muhammad Alam

    Outline:Background: Time-dependent degradationThe Reaction-Diffusion modelApproximate solution to R-D model in stress phaseDegradation free transistorsConclusions

  20. ECE 695A Lecture 9R: Review Questions

    08 Feb 2013 | | Contributor(s):: Muhammad Alam

    Review Questions:Does NBTI power-exponent depend on voltage or temperature?Do you expect the NBTI power-exponent to be larger or smaller if trapping is important?How does one know that the diffusing species is neutral?How would the time-exponent different for a surround gate MOSFET vs. planar...