Tags: NBTI

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  1. ECE 695A Lecture 8: Phenomenological Observations for NBTI

    01 Feb 2013 | | Contributor(s):: Muhammad Alam

    Outline:Qualitative observationsTime, voltage, temperature dependenciesMaterial dependenceCircuit implications

  2. ECE 695A Lecture 8R: Review Questions

    01 Feb 2013 | | Contributor(s):: Muhammad Alam

    What is the distinction between BTI and NBTI phenomena?What does it mean that a process is thermally activated?What is the difference between parametric failure and catastrophic failure? Give examples. What are the time-characteristics of trapping, BTI, and NBTI?Which device will have poorer...

  3. Siting Liu

    http://nanohub.org/members/60600

  4. Esteve Amat

    http://nanohub.org/members/52897

  5. On the Resolution of Ultra-fast NBTI Measurements and Reaction-Diffusion Theory

    30 Dec 2009 | | Contributor(s):: Ahmad Ehteshamul Islam, Souvik Mahapatra, Muhammad A. Alam

    Reaction-Diffusion (R-D) theory, well-known to successfully explain most features of NBTI stress, is perceived to fail in explaining NBTI recovery. Several efforts have been made to understand differences between NBTI relaxation measured using ultra-fast methods and that predicted by R-D theory....

  6. Mobility Variation Due to Interface Trap Generation in Plasma Oxynitrided PMOS Devices

    30 Jun 2008 | | Contributor(s):: Ahmad Ehteshamul Islam, Souvik Mahapatra, Muhammad A. Alam

    Mobility degradation due to generation of interfacetraps, Δµeff(NIT), is a well-known phenomenon that has beentheoretically interpreted by several mobility models. Based onthese analysis, there is a general perception that Δµeff(NIT) isrelatively insignificant (compared to Δµeff due to...

  7. Modeling Interface-defect Generation (MIG)

    18 Jul 2006 | | Contributor(s):: Ahmad Ehteshamul Islam, HALDUN KUFLUOGLU, Muhammad A. Alam

    Analyzes device reliability based on NBTI

  8. Ahmad Ehteshamul Islam

    Ahmad Ehteshamul Islam is currently a Research Scientist at UES, Inc. and is working in the Soft Matter Branch in Materials and Manufacturing Directorate (RXAS), Air Force Research Laboratory...

    http://nanohub.org/members/9615

  9. Spice3f4

    14 Aug 2005 | | Contributor(s):: Michael McLennan

    General-purpose circuit simulation program for nonlinear dc, nonlinear transient, and linear ac analysis

  10. Negative Bias Temperature Instability (NBTI)

    22 Nov 2016

    In this modular course, we will cover recent advances in Negative Bias Temperature Instability (NBTI), which is a crucial reliability issue for Silicon Oxynitride and High K Metal Gate PMOS...

    http://nanohub.org/courses/NBTI