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ECE 695A Lecture 8: Phenomenological Observations for NBTI
01 Feb 2013 | | Contributor(s):: Muhammad Alam
Outline:Qualitative observationsTime, voltage, temperature dependenciesMaterial dependenceCircuit implications
ECE 695A Lecture 8R: Review Questions
What is the distinction between BTI and NBTI phenomena?What does it mean that a process is thermally activated?What is the difference between parametric failure and catastrophic failure? Give examples. What are the time-characteristics of trapping, BTI, and NBTI?Which device will have poorer...
On the Resolution of Ultra-fast NBTI Measurements and Reaction-Diffusion Theory
30 Dec 2009 | | Contributor(s):: Ahmad Ehteshamul Islam, Souvik Mahapatra, Muhammad A. Alam
Reaction-Diffusion (R-D) theory, well-known to successfully explain most features of NBTI stress, is perceived to fail in explaining NBTI recovery. Several efforts have been made to understand differences between NBTI relaxation measured using ultra-fast methods and that predicted by R-D theory....
Mobility Variation Due to Interface Trap Generation in Plasma Oxynitrided PMOS Devices
out of 5 stars
30 Jun 2008 | | Contributor(s):: Ahmad Ehteshamul Islam, Souvik Mahapatra, Muhammad A. Alam
Mobility degradation due to generation of interfacetraps, Δµeff(NIT), is a well-known phenomenon that has beentheoretically interpreted by several mobility models. Based onthese analysis, there is a general perception that Δµeff(NIT) isrelatively insignificant (compared to Δµeff due to...
Modeling Interface-defect Generation (MIG)
18 Jul 2006 | | Contributor(s):: Ahmad Ehteshamul Islam, HALDUN KUFLUOGLU, Muhammad A. Alam
Analyzes device reliability based on NBTI
Ahmad Ehteshamul Islam
14 Aug 2005 | | Contributor(s):: Michael McLennan
General-purpose circuit simulation program for nonlinear dc, nonlinear transient, and linear ac analysis
Negative Bias Temperature Instability (NBTI)
22 Nov 2016
In this modular course, we will cover recent advances in Negative Bias Temperature Instability (NBTI), which is a crucial reliability issue for Silicon Oxynitride and High K Metal Gate PMOS...