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ECE 695A Lecture 8R: Review Questions
01 Feb 2013 | Online Presentations | Contributor(s): Muhammad Alam
What is the distinction between BTI and NBTI phenomena?
What does it mean that a process is thermally activated?
What is the difference between parametric failure and catastrophic failure?...
On the Resolution of Ultra-fast NBTI Measurements and Reaction-Diffusion Theory
30 Dec 2009 | Online Presentations | Contributor(s): Ahmad Ehteshamul Islam, Souvik Mahapatra, Muhammad A. Alam
Reaction-Diffusion (R-D) theory, well-known to successfully explain most features of NBTI stress, is perceived to fail in explaining NBTI recovery. Several efforts have been made to understand...
Mobility Variation Due to Interface Trap Generation in Plasma Oxynitrided PMOS Devices
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01 Jul 2008 | Online Presentations | Contributor(s): Ahmad Ehteshamul Islam, Souvik Mahapatra, Muhammad A. Alam
Mobility degradation due to generation of interface
traps, Δµeff(NIT), is a well-known phenomenon that has been
theoretically interpreted by several mobility models. Based on
Modeling Interface-defect Generation (MIG)
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28 Aug 2006 | Tools | Contributor(s): Ahmad Ehteshamul Islam, Haldun Kufluoglu, Muhammad A. Alam
Analyzes device reliability based on NBTI
Ahmad Ehteshamul Islam
5.0 out of 5 stars
14 Aug 2005 | Tools | Contributor(s): Michael McLennan
General-purpose circuit simulation program for nonlinear dc, nonlinear transient, and linear ac analysis
Negative Bias Temperature Instability (NBTI)
22 Nov 2016
In this modular course, we will cover recent advances in Negative Bias Temperature Instability (NBTI), which is a crucial reliability issue for Silicon Oxynitride and High K Metal Gate PMOS...