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Teaching Materials (21-30 of 30)

  1. Time-Dependent Perturbation Theory and Variable Matrix Element

    30 Jun 2011 | | Contributor(s):: Dragica Vasileska

    This set of handwritten notes is part of the semiconductor transport class. It gives the derivation of the Fermi's Golden Rule.

  2. Deformation Potential Scattering

    30 Jun 2011 | | Contributor(s):: Dragica Vasileska

    This set of lecture notes is part of the semiconductor transport class. This particular lecture gives the scattering rates for deformation potential scattering.

  3. Non-polar optical phonon scattering

    30 Jun 2011 | | Contributor(s):: Dragica Vasileska

    These handwritten notes are part of the Semiconductor Transport class and describe non-polar optical phonon scattering.

  4. Polar optical phonon scattering

    30 Jun 2011 | | Contributor(s):: Dragica Vasileska

    These handwritten lecture notes are part of the semiconductor transport class and describe polar optical phonon scattering derivation.

  5. Piezoelectric Scattering

    30 Jun 2011 | | Contributor(s):: Dragica Vasileska

    This set of handwritten notes describes piezoelectric scattering and is part of the Semiconductor Transport class.

  6. Intervalley scattering

    30 Jun 2011 | | Contributor(s):: Dragica Vasileska

    These handwritten notes describe intervalley scattering and are part of the Semiconductor Transport class.

  7. Carrier-Carrier scattering

    30 Jun 2011 | | Contributor(s):: Dragica Vasileska

    These handwritten notes are part of the semiconductor transport Class and describe carrier-carrier scattering.

  8. Introductory Comments for Confined Carriers

    30 Jun 2011 | | Contributor(s):: Dragica Vasileska

    These handwritten notes give introductory notes for confined carriers and are part of the Semiconductor Transport class.

  9. Verification of the Validity of the MOSFET Tool

    11 Oct 2010 | | Contributor(s):: Saumitra Raj Mehrotra, Dragica Vasileska, Gerhard Klimeck

    Output characteristics of a bulk MOSFET are computed using MOSFET lab and compared with an analytical model based on Bulk-Charge theory. Parasitic resistance is used as a fitting parameter in the analytical model. MATLAB script used for verification is also available for download.

  10. Verification of the Validity of the BJT Tool

    24 Aug 2010 | | Contributor(s):: Saumitra Raj Mehrotra, Dragica Vasileska, Gerhard Klimeck

    A pnp BJT in Common-Base configuration is analyzed both analytically and numerically using BJT Lab. DC current gain and Output characteristics are computed.MATLAB script used is also available for download.