
MVS Nanotransistor Model (Silicon)
02 Dec 2015  Compact Models  Contributor(s):
By Shaloo Rakheja^{1}, Dimitri Antoniadis^{1}
Massachusetts Institute of Technology (MIT)
The MIT Virtual Source (MVS) model is a semiempirical compact model for nanoscale transistors that accurately describes the physics of quasiballistic transistors with only a few physical parameters.
http://nanohub.org/publications/15/?v=4

MVS IIIV HEMT model
01 Dec 2015  Compact Models  Contributor(s):
By Shaloo Rakheja^{1}, Dimitri Antoniadis^{1}
Massachusetts Institute of Technology (MIT)
The MIT Virtual Source (MVS) model is a semiempirical compact model for nanoscale transistors that accurately describes the physics of quasiballistic transistors with only a few physical...
http://nanohub.org/publications/71/?v=1

MVS Nanotransistor Model
01 Dec 2015  Compact Models  Contributor(s):
By Shaloo Rakheja^{1}, Dimitri Antoniadis^{1}
Massachusetts Institute of Technology (MIT)
The MIT Virtual Source (MVS) model is a semiempirical compact model for nanoscale transistors that accurately describes the physics of quasiballistic transistors with only a few physical parameters.
http://nanohub.org/publications/74/?v=1

Thermoelectric Device Compact Model
01 Sep 2015  Compact Models  Contributor(s):
By Xufeng Wang^{1}, Kyle Conrad^{1}, Jesse Maassen^{1}, Mark Lundstrom^{1}
Purdue University
The NEEDS thermoelectric compact model describes a homogeneous segment of thermoelectric material and serves as a basic building block for complex electrothermal system.
http://nanohub.org/publications/80/?v=1

Released Resonant Body Transistor with MIT Virtual Source (RBTMVS) Model
30 Aug 2015  Compact Models  Contributor(s):
By Bichoy W. Bahr^{1}, Dana Weinstein^{1}, Luca Daniel^{1}
Massachusetts Institute of Technology (MIT)
An RBT is a microelectromechanical (MEM) resonator with a transistor (FET) incorporated into the resonator structure to sense the mechanical vibrations. This is a fullyfeatured spicecompatible...
http://nanohub.org/publications/72/?v=1

IIIV Tunnel FET Model
20 Apr 2015  Compact Models  Contributor(s):
By Huichu Liu^{1}, Vinay Saripalli^{1}, Vijaykrishnan Narayanan^{1}, Suman Datta^{1}
Penn State University
The IIIV Tunnel FET Model is a lookup table based model, where the device current and capacitance characteristics are obtained from calibrated TCAD Sentaurus simulation.
http://nanohub.org/publications/12/?v=2

mCell Model
19 Jan 2015  Compact Models  Contributor(s):
By David M. Bromberg^{1}, Daniel H. Morris^{1}
Carnegie Mellon University
This model is a hybrid physics/empirical compact model that describes digital switching behavior of an mCell logic devices, where a write current moves a domain wall to switch the resistance of a...
http://nanohub.org/publications/13/?v=2

R3
21 Nov 2014  Compact Models  Contributor(s):
By Colin McAndrew
Freescale Semiconductor, Inc.
Compact model for polysilicon (poly) resistors, 3terminal JFETs, and diffused resistors.
http://nanohub.org/publications/26/?v=1

FET pH Sensor Model
03 Nov 2014  Compact Models  Contributor(s):
By Piyush Dak^{1}, Muhammad A. Alam^{1}
Purdue University
The FET pH sensor model is a surface potential compact model for FET based pH sensors that accurately describes the physics of electrolyte and surface charges that respond to pH.
http://nanohub.org/publications/11/?v=1

Spin Switch Model
23 Oct 2014  Compact Models  Contributor(s):
By Samiran Ganguly^{1}, Kerem Yunus Camsari^{1}, Supriyo Datta^{1}
Purdue University
We present a circuit/compact model for the Spin Switch created using a VerilogA based library of "spintronic lego blocks" building upon previous works on spin transport.
http://nanohub.org/publications/21/?v=1

Stanford University ResistiveSwitching Random Access Memory (RRAM) VerilogA Model
23 Oct 2014  Compact Models  Contributor(s):
By Zizhen Jiang^{1}, H.S. Philip Wong^{1}
Stanford University
The Stanford University RRAM Model is a SPICEcompatible compact model which describes switching performance for bipolar metal oxide RRAM.
http://nanohub.org/publications/19/?v=1

Purdue Nanoelectronics Research Laboratory Magnetic Tunnel Junction Model
23 Oct 2014  Compact Models  Contributor(s):
By Xuanyao Fong^{1}, Sri Harsha Choday^{1}, Panagopoulos Georgios^{1}, Charles Augustine^{1}, Kaushik Roy^{1}
Purdue University
This is the VerilogA model of the magnetic tunnel junction developed by the Nanoelectronics Research Laboratory at Purdue University.
http://nanohub.org/publications/16/?v=1

TAG Solar Cell Model (pin thin film)
23 Oct 2014  Compact Models  Contributor(s):
By Sourabh Dongaonkar^{1}, Xingshu Sun^{1}, Mark Lundstrom^{1}, Muhammad A. Alam^{1}
Purdue University
The TAG solar cell model is a physicsbased compact model for pin thin film solar cells that can be used for panel level simulations.
http://nanohub.org/publications/20/?v=1

Stanford 2D Semiconductor (S2DS) Transistor Model
22 Oct 2014  Compact Models  Contributor(s):
By Saurabh Vinayak Suryavanshi^{1}, Eric Pop^{1}
Stanford University
The Stanford 2D Semiconductor (S2DS) model is a physicsbased, compact model for fieldeffect transistors (FETs) based on twodimensional (2D) semiconductors such as MoS2.
http://nanohub.org/publications/18/?v=1

Released Resonant Body Transistor (RBT) Model
22 Oct 2014  Compact Models  Contributor(s):
By Bichoy W. Bahr^{1}, Dana Weinstein^{1}, Luca Daniel^{1}
Massachusetts Institute of Technology (MIT)
An RBT is a microelectromechanical (MEM) resonator with a transistor (FET) incorporated into the resonator structure to sense the mechanical vibrations. The model is aimed to present a deep...
http://nanohub.org/publications/17/?v=1

MIT Virtual Source GaNFETRF ( MVSGRF) Model
22 Oct 2014  Compact Models  Contributor(s):
By Ujwal Radhakrishna^{1}, Dimitri Antoniadis^{1}
Massachusetts Institute of Technology (MIT)
The MVSGRF GaN HEMT model is a selfconsistent transport/capacitance model for scaled GaN HEMT devices used in RF applications.
http://nanohub.org/publications/14/?v=1

Ambipolar Virtual Source Compact Model for Graphene FETs
22 Oct 2014  Compact Models  Contributor(s):
By Shaloo Rakheja^{1}, Dimitri Antoniadis^{1}
Massachusetts Institute of Technology (MIT)
This is a compact physicsbased ambipolarvirtualsource (AVS) model that describes carrier transport in both unipolar and ambipolar regimes in quasiballistic graphene fieldeffect transistors...
http://nanohub.org/publications/10/?v=1