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Resources (1-17 of 17)

  1. MVS Nanotransistor Model (Silicon)

    02 Dec 2015 | Compact Models | Contributor(s):

    By Shaloo Rakheja1, Dimitri Antoniadis1

    Massachusetts Institute of Technology (MIT)

    The MIT Virtual Source (MVS) model is a semi-empirical compact model for nanoscale transistors that accurately describes the physics of quasi-ballistic transistors with only a few physical parameters.

    http://nanohub.org/publications/15/?v=4

  2. MVS III-V HEMT model

    01 Dec 2015 | Compact Models | Contributor(s):

    By Shaloo Rakheja1, Dimitri Antoniadis1

    Massachusetts Institute of Technology (MIT)

    The MIT Virtual Source (MVS) model is a semi-empirical compact model for nanoscale transistors that accurately describes the physics of quasi-ballistic transistors with only a few physical...

    http://nanohub.org/publications/71/?v=1

  3. MVS Nanotransistor Model

    01 Dec 2015 | Compact Models | Contributor(s):

    By Shaloo Rakheja1, Dimitri Antoniadis1

    Massachusetts Institute of Technology (MIT)

    The MIT Virtual Source (MVS) model is a semi-empirical compact model for nanoscale transistors that accurately describes the physics of quasi-ballistic transistors with only a few physical parameters.

    http://nanohub.org/publications/74/?v=1

  4. Thermoelectric Device Compact Model

    01 Sep 2015 | Compact Models | Contributor(s):

    By Xufeng Wang1, Kyle Conrad1, Jesse Maassen1, Mark Lundstrom1

    Purdue University

    The NEEDS thermoelectric compact model describes a homogeneous segment of thermoelectric material and serves as a basic building block for complex electrothermal system.

    http://nanohub.org/publications/80/?v=1

  5. Released Resonant Body Transistor with MIT Virtual Source (RBT-MVS) Model

    30 Aug 2015 | Compact Models | Contributor(s):

    By Bichoy W. Bahr1, Dana Weinstein1, Luca Daniel1

    Massachusetts Institute of Technology (MIT)

    An RBT is a micro-electromechanical (MEM) resonator with a transistor (FET) incorporated into the resonator structure to sense the mechanical vibrations. This is a fully-featured spice-compatible...

    http://nanohub.org/publications/72/?v=1

  6. III-V Tunnel FET Model

    20 Apr 2015 | Compact Models | Contributor(s):

    By Huichu Liu1, Vinay Saripalli1, Vijaykrishnan Narayanan1, Suman Datta1

    Penn State University

    The III-V Tunnel FET Model is a look-up table based model, where the device current and capacitance characteristics are obtained from calibrated TCAD Sentaurus simulation.

    http://nanohub.org/publications/12/?v=2

  7. mCell Model

    19 Jan 2015 | Compact Models | Contributor(s):

    By David M. Bromberg1, Daniel H. Morris1

    Carnegie Mellon University

    This model is a hybrid physics/empirical compact model that describes digital switching behavior of an mCell logic devices, where a write current moves a domain wall to switch the resistance of a...

    http://nanohub.org/publications/13/?v=2

  8. R3

    21 Nov 2014 | Compact Models | Contributor(s):

    By Colin McAndrew

    Freescale Semiconductor, Inc.

    Compact model for polysilicon (poly) resistors, 3-terminal JFETs, and diffused resistors.

    http://nanohub.org/publications/26/?v=1

  9. FET pH Sensor Model

    03 Nov 2014 | Compact Models | Contributor(s):

    By Piyush Dak1, Muhammad A. Alam1

    Purdue University

    The FET pH sensor model is a surface potential compact model for FET based pH sensors that accurately describes the physics of electrolyte and surface charges that respond to pH.

    http://nanohub.org/publications/11/?v=1

  10. Spin Switch Model

    23 Oct 2014 | Compact Models | Contributor(s):

    By Samiran Ganguly1, Kerem Yunus Camsari1, Supriyo Datta1

    Purdue University

    We present a circuit/compact model for the Spin Switch created using a Verilog-A based library of "spintronic lego blocks" building upon previous works on spin transport.

    http://nanohub.org/publications/21/?v=1

  11. Stanford University Resistive-Switching Random Access Memory (RRAM) Verilog-A Model

    23 Oct 2014 | Compact Models | Contributor(s):

    By Zizhen Jiang1, H.-S. Philip Wong1

    Stanford University

    The Stanford University RRAM Model is a SPICE-compatible compact model which describes switching performance for bipolar metal oxide RRAM.

    http://nanohub.org/publications/19/?v=1

  12. Purdue Nanoelectronics Research Laboratory Magnetic Tunnel Junction Model

    23 Oct 2014 | Compact Models | Contributor(s):

    By Xuanyao Fong1, Sri Harsha Choday1, Panagopoulos Georgios1, Charles Augustine1, Kaushik Roy1

    Purdue University

    This is the Verilog-A model of the magnetic tunnel junction developed by the Nanoelectronics Research Laboratory at Purdue University.

    http://nanohub.org/publications/16/?v=1

  13. TAG Solar Cell Model (p-i-n thin film)

    23 Oct 2014 | Compact Models | Contributor(s):

    By Sourabh Dongaonkar1, Xingshu Sun1, Mark Lundstrom1, Muhammad A. Alam1

    Purdue University

    The TAG solar cell model is a physics-based compact model for p-i-n thin film solar cells that can be used for panel level simulations.

    http://nanohub.org/publications/20/?v=1

  14. Stanford 2D Semiconductor (S2DS) Transistor Model

    22 Oct 2014 | Compact Models | Contributor(s):

    By Saurabh Vinayak Suryavanshi1, Eric Pop1

    Stanford University

    The Stanford 2D Semiconductor (S2DS) model is a physics-based, compact model for field-effect transistors (FETs) based on two-dimensional (2D) semiconductors such as MoS2.

    http://nanohub.org/publications/18/?v=1

  15. Released Resonant Body Transistor (RBT) Model

    22 Oct 2014 | Compact Models | Contributor(s):

    By Bichoy W. Bahr1, Dana Weinstein1, Luca Daniel1

    Massachusetts Institute of Technology (MIT)

    An RBT is a micro-electromechanical (MEM) resonator with a transistor (FET) incorporated into the resonator structure to sense the mechanical vibrations. The model is aimed to present a deep...

    http://nanohub.org/publications/17/?v=1

  16. MIT Virtual Source GaNFET-RF ( MVSG-RF) Model

    22 Oct 2014 | Compact Models | Contributor(s):

    By Ujwal Radhakrishna1, Dimitri Antoniadis1

    Massachusetts Institute of Technology (MIT)

    The MVS-G-RF GaN HEMT model is a self-consistent transport/capacitance model for scaled GaN HEMT devices used in RF applications.

    http://nanohub.org/publications/14/?v=1

  17. Ambipolar Virtual Source Compact Model for Graphene FETs

    22 Oct 2014 | Compact Models | Contributor(s):

    By Shaloo Rakheja1, Dimitri Antoniadis1

    Massachusetts Institute of Technology (MIT)

    This is a compact physics-based ambipolar-virtual-source (AVS) model that describes carrier transport in both unipolar and ambipolar regimes in quasi-ballistic graphene field-effect transistors...

    http://nanohub.org/publications/10/?v=1

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