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MVS Nanotransistor Model (Silicon)
02 Dec 2015 | Compact Models | Contributor(s):
By Shaloo Rakheja1, Dimitri Antoniadis1
Massachusetts Institute of Technology (MIT)
The MIT Virtual Source (MVS) model is a semi-empirical compact model for nanoscale transistors that accurately describes the physics of quasi-ballistic transistors with only a few physical parameters.
MVS III-V HEMT model
01 Dec 2015 | Compact Models | Contributor(s):
The MIT Virtual Source (MVS) model is a semi-empirical compact model for nanoscale transistors that accurately describes the physics of quasi-ballistic transistors with only a few physical...
MVS Nanotransistor Model
Thermoelectric Device Compact Model
01 Sep 2015 | Compact Models | Contributor(s):
By Xufeng Wang1, Kyle Conrad1, Jesse Maassen1, Mark Lundstrom1
The NEEDS thermoelectric compact model describes a homogeneous segment of thermoelectric material and serves as a basic building block for complex electrothermal system.
Released Resonant Body Transistor with MIT Virtual Source (RBT-MVS) Model
30 Aug 2015 | Compact Models | Contributor(s):
By Bichoy W. Bahr1, Dana Weinstein1, Luca Daniel1
An RBT is a micro-electromechanical (MEM) resonator with a transistor (FET) incorporated into the resonator structure to sense the mechanical vibrations. This is a fully-featured spice-compatible...
III-V Tunnel FET Model
20 Apr 2015 | Compact Models | Contributor(s):
By Huichu Liu1, Vinay Saripalli1, Vijaykrishnan Narayanan1, Suman Datta1
Penn State University
The III-V Tunnel FET Model is a look-up table based model, where the device current and capacitance characteristics are obtained from calibrated TCAD Sentaurus simulation.
19 Jan 2015 | Compact Models | Contributor(s):
By David M. Bromberg1, Daniel H. Morris1
Carnegie Mellon University
This model is a hybrid physics/empirical compact model that describes digital switching behavior of an mCell logic devices, where a write current moves a domain wall to switch the resistance of a...
21 Nov 2014 | Compact Models | Contributor(s):
By Colin McAndrew
Freescale Semiconductor, Inc.
Compact model for polysilicon (poly) resistors, 3-terminal JFETs, and diffused resistors.
FET pH Sensor Model
03 Nov 2014 | Compact Models | Contributor(s):
By Piyush Dak1, Muhammad A. Alam1
The FET pH sensor model is a surface potential compact model for FET based pH sensors that accurately describes the physics of electrolyte and surface charges that respond to pH.
Spin Switch Model
23 Oct 2014 | Compact Models | Contributor(s):
By Samiran Ganguly1, Kerem Yunus Camsari1, Supriyo Datta1
We present a circuit/compact model for the Spin Switch created using a Verilog-A based library of "spintronic lego blocks" building upon previous works on spin transport.
Stanford University Resistive-Switching Random Access Memory (RRAM) Verilog-A Model
By Zizhen Jiang1, H.-S. Philip Wong1
The Stanford University RRAM Model is a SPICE-compatible compact model which describes switching performance for bipolar metal oxide RRAM.
Purdue Nanoelectronics Research Laboratory Magnetic Tunnel Junction Model
By Xuanyao Fong1, Sri Harsha Choday1, Panagopoulos Georgios1, Charles Augustine1, Kaushik Roy1
This is the Verilog-A model of the magnetic tunnel junction developed by the Nanoelectronics Research Laboratory at Purdue University.
TAG Solar Cell Model (p-i-n thin film)
By Sourabh Dongaonkar1, Xingshu Sun1, Mark Lundstrom1, Muhammad A. Alam1
The TAG solar cell model is a physics-based compact model for p-i-n thin film solar cells that can be used for panel level simulations.
Stanford 2D Semiconductor (S2DS) Transistor Model
22 Oct 2014 | Compact Models | Contributor(s):
By Saurabh Vinayak Suryavanshi1, Eric Pop1
The Stanford 2D Semiconductor (S2DS) model is a physics-based, compact model for field-effect transistors (FETs) based on two-dimensional (2D) semiconductors such as MoS2.
Released Resonant Body Transistor (RBT) Model
An RBT is a micro-electromechanical (MEM) resonator with a transistor (FET) incorporated into the resonator structure to sense the mechanical vibrations. The model is aimed to present a deep...
MIT Virtual Source GaNFET-RF ( MVSG-RF) Model
By Ujwal Radhakrishna1, Dimitri Antoniadis1
The MVS-G-RF GaN HEMT model is a self-consistent transport/capacitance model for scaled GaN HEMT devices used in RF applications.
Ambipolar Virtual Source Compact Model for Graphene FETs
This is a compact physics-based ambipolar-virtual-source (AVS) model that describes carrier transport in both unipolar and ambipolar regimes in quasi-ballistic graphene field-effect transistors...