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NEEDS: Goals, Status, and Plans
18 Mar 2016 | Presentation Materials | Contributor(s): Mark Lundstrom
This is the opening talk for 2016 MAPP workshop at U.C. Berkeley. It gives an overview of the NEEDS node in 2016.
Too hot to handle? The emerging challenge of reliability/variability in self-heated FintFET, ETSOI, and GAA-FET
11 Jan 2016 | Presentation Materials | Contributor(s): Muhammad A. Alam, Sang Hoon Shin, Muhammad Abdul Wahab, Jiangjiang Gu, Jingyun Zhang, Peide "Peter" Ye
This presentation is part of the 8th IEEE/ACM Workshop on Variability Modeling and Characterization (VMC) 2015. It is difficult to control the geometry, doping, and thicknesses of small...
MAPP: The Berkeley Model and Algorithm Prototyping Platform
11 Jan 2016 | Presentation Materials | Contributor(s): Tianshi Wang, Aadithya V Karthik, Jaijeet Roychowdhury
This presentation is part of the 8th IEEE/ACM Workshop on Variability Modeling and Characterization (VMC) 2015. It provides an introduction to Berkeley Model and Algorithm Prototyping Platform...
The NEEDS Initiative: Devices, Circuits, and Systems
07 Jan 2016 | Presentation Materials | Contributor(s): Mark Lundstrom
This presentation is part of the 8th IEEE/ACM Workshop on Variability Modeling and Characterization (VMC) 2015.
This presentation provides an overview of the NEEDS initiative, which is funded...
Advanced CMOS Device Physics for 7 nm and Beyond
16 Dec 2015 | Presentation Materials | Contributor(s): Scott Thompson
This presentation is part of 2015 IEDM tutorials The industry march along Moore's Law continues and new semiconductor nodes at 7 and beyond will certainly happen. However, many device,...
Emerging CMOS Technology at 5 nm and Beyond: Device Options and Trade-offs
14 Dec 2015 | Presentation Materials | Contributor(s): Mark Lundstrom, Xingshu Sun, Dimitri Antoniadis, Shaloo Rakheja
Device Options and Trade-offs
MATLAB: Negative Capacitance (NC) FET Model
05 Dec 2015 | Downloads | Contributor(s): Muhammad Abdul Wahab, Muhammad A. Alam
MATLAB model that calculates the Q-V, C-V, and I-V characteristics of the conventional MOSFET and NC-FET.
A Tutorial Introduction to Negative-Capacitor Landau Transistors: Perspectives on the Road Ahead
04 Dec 2015 | Online Presentations | Contributor(s): Muhammad A. Alam
In this talk, I use a simple graphical approach to demystify the device and explain why the experimental results are easy to misinterpret. Since the NC-FET is just a special case of a much broader...
VALint: the NEEDS Verilog-A Checker (BETA)
0.0 out of 5 stars
21 Jan 2015 | Tools | Contributor(s): Xufeng Wang, Geoffrey Coram, Colin McAndrew
Verilog-A lint and pretty printer created by NEEDS
TAG Solar Cell Model (p-i-n thin film) 1.0.0
02 Apr 2014 | Compact Models | Contributor(s): Sourabh Dongaonkar, Xingshu Sun, Mark Lundstrom, Muhammad A. Alam
A new Version of this resource has been released. Please see TAG Solar Cell Model (p-i-n thin film) 1.0.1. The TAG solar cell model is a physics-based compact model for p-i-n thin film solar cells...
NEEDS Compact Model Development Process - v0.1
17 Feb 2014 | Online Presentations | Contributor(s): Michael McLennan
The Nano-Engineered Electronic Device Simulation (NEEDS) effort is focused on creating compact models for nanoelectronics. The process involves a new Berkeley Model Development Environment (MDE)...
RF Solid-State Vibrating Transistors
15 Feb 2014 | Online Presentations | Contributor(s): Dana Weinstein
In this talk, I will discuss the Resonant Body Transistor (RBT), which can be integrated into a standard CMOS process. The first hybrid RF MEMS-CMOS resonators in Si at the transistor level of...
Tunnel FETs - Device Physics and Realizations
10 Jul 2013 | Online Presentations | Contributor(s): Joachim Knoch
Here, the operating principles of TFETs will be discussed in detail and experimental realizations as well as simulation results will be presented. In particular, the role of the injecting source...
The Road Ahead for Carbon Nanotube Transistors
09 Jul 2013 | Online Presentations | Contributor(s): Aaron Franklin
In this talk, recent advancements in the nanotube transistor field will be reviewed, showing why CNTFETs are worth considering now more than ever. Then, the material- and device-related challenges...
Physics and Simulation of Nanoscale Electronic and Thermoelectric Devices
28 Jun 2013 | Papers | Contributor(s): raseong kim
For the past few decades, transistors have been continuously scaled. Dimensions are now at the nanoscale, and device performance has dramatically improved. Nanotechnology is also achieving...
III-V Nanoscale MOSFETS: Physics, Modeling, and Design
28 Jun 2013 | Papers | Contributor(s): Yang Liu
As predicted by the International Roadmap for Semiconductors (ITRS), power consumption has been the bottleneck for future silicon CMOS technology scaling. To circumvent this limit, researchers are...
Device Physics Studies of III-V and Silicon MOSFETS for Digital Logic
28 Jun 2013 | Papers | Contributor(s): Himadri Pal
III-V's are currently gaining a lot of attraction as possible MOSFET channel materials due to their high intrinsic mobility. Several challenges, however, need to be overcome before III-V's can...
Quantum and Atomistic Effects in Nanoelectronic Transport Devices
28 Jun 2013 | Papers | Contributor(s): Neophytos Neophytou
As devices scale towards atomistic sizes, researches in silicon electronic device technology are investigating alternative structures and materials. As predicted by the International Roadmap for...
Inelastic Transport in Carbon Nanotube Electronic and Optoelectronic Devices
28 Jun 2013 | Papers | Contributor(s): Siyu Koswatta
Discovered in the early 1990's, carbon nanotubes (CNTs) are found to have exceptional physical characteristics compared to conventional semiconductor materials, with much potential for devices...
Electron Phonon Interaction in Carbon Nanotube Devices
28 Jun 2013 | Papers | Contributor(s): Sayed Hasan
With the end of silicon technology scaling in sight, there has been a lot of interest in alternate novel channel materials and device geometry. Carbon nanotubes, the ultimate one-dimensional (1D)...