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Resources (1-20 of 38)

  1. Too hot to handle? The emerging challenge of reliability/variability in self-heated FintFET, ETSOI, and GAA-FET

    11 Jan 2016 | Presentation Materials | Contributor(s): Muhammad A. Alam, Sang Hoon Shin, Muhammad Abdul Wahab, Jiangjiang Gu, Jingyun Zhang, Peide "Peter" Ye

    This presentation is part of the 8th IEEE/ACM Workshop on Variability Modeling and Characterization (VMC) 2015. It is difficult to control the geometry, doping, and thicknesses of small...

    http://nanohub.org/resources/23372

  2. MAPP: The Berkeley Model and Algorithm Prototyping Platform

    11 Jan 2016 | Presentation Materials | Contributor(s): Tianshi Wang, Aadithya V Karthik, Jaijeet Roychowdhury

    This presentation is part of the 8th IEEE/ACM Workshop on Variability Modeling and Characterization (VMC) 2015. It provides an introduction to Berkeley Model and Algorithm Prototyping Platform...

    http://nanohub.org/resources/23370

  3. The NEEDS Initiative: Devices, Circuits, and Systems

    07 Jan 2016 | Presentation Materials | Contributor(s): Mark Lundstrom

    This presentation is part of the 8th IEEE/ACM Workshop on Variability Modeling and Characterization (VMC) 2015. This presentation provides an overview of the NEEDS initiative, which is funded...

    http://nanohub.org/resources/23365

  4. Advanced CMOS Device Physics for 7 nm and Beyond

    16 Dec 2015 | Presentation Materials | Contributor(s): Scott Thompson

    This presentation is part of 2015 IEDM tutorials The industry march along Moore's Law continues and new semiconductor nodes at 7 and beyond will certainly happen. However, many device,...

    http://nanohub.org/resources/23282

  5. Emerging CMOS Technology at 5 nm and Beyond: Device Options and Trade-offs

    14 Dec 2015 | Presentation Materials | Contributor(s): Mark Lundstrom, Xingshu Sun, Dimitri Antoniadis, Shaloo Rakheja

    Device Options and Trade-offs

    http://nanohub.org/resources/23273

  6. MATLAB: Negative Capacitance (NC) FET Model

    05 Dec 2015 | Downloads | Contributor(s): Muhammad Abdul Wahab, Muhammad A. Alam

    MATLAB model that calculates the Q-V, C-V, and I-V characteristics of the conventional MOSFET and NC-FET.

    http://nanohub.org/resources/23185

  7. A Tutorial Introduction to Negative-­Capacitor Landau Transistors: Perspectives on the Road Ahead

    04 Dec 2015 | Online Presentations | Contributor(s): Muhammad A. Alam

    In this talk, I use a simple graphical approach to demystify the device and explain why the experimental results are easy to misinterpret. Since the NC-FET is just a special case of a much broader...

    http://nanohub.org/resources/23157

  8. VALint: the NEEDS Verilog-A Checker (BETA)

    21 Jan 2015 | Tools | Contributor(s): Xufeng Wang, Geoffrey Coram, Colin McAndrew

    Verilog-A lint and pretty printer created by NEEDS

    http://nanohub.org/resources/vachecker

  9. TAG Solar Cell Model (p-i-n thin film) 1.0.0

    02 Apr 2014 | Compact Models | Contributor(s): Sourabh Dongaonkar, Xingshu Sun, Mark Lundstrom, Muhammad A. Alam

    A new Version of this resource has been released. Please see TAG Solar Cell Model (p-i-n thin film) 1.0.1. The TAG solar cell model is a physics-based compact model for p-i-n thin film solar cells...

    http://nanohub.org/resources/20775

  10. NEEDS Compact Model Development Process - v0.1

    17 Feb 2014 | Online Presentations | Contributor(s): Michael McLennan

    The Nano-Engineered Electronic Device Simulation (NEEDS) effort is focused on creating compact models for nanoelectronics. The process involves a new Berkeley Model Development Environment (MDE)...

    http://nanohub.org/resources/20359

  11. RF Solid-State Vibrating Transistors

    15 Feb 2014 | Online Presentations | Contributor(s): Dana Weinstein

    In this talk, I will discuss the Resonant Body Transistor (RBT), which can be integrated into a standard CMOS process. The first hybrid RF MEMS-CMOS resonators in Si at the transistor level of...

    http://nanohub.org/resources/20335

  12. Tunnel FETs - Device Physics and Realizations

    10 Jul 2013 | Online Presentations | Contributor(s): Joachim Knoch

    Here, the operating principles of TFETs will be discussed in detail and experimental realizations as well as simulation results will be presented. In particular, the role of the injecting source...

    http://nanohub.org/resources/18723

  13. The Road Ahead for Carbon Nanotube Transistors

    09 Jul 2013 | Online Presentations | Contributor(s): Aaron Franklin

    In this talk, recent advancements in the nanotube transistor field will be reviewed, showing why CNTFETs are worth considering now more than ever. Then, the material- and device-related challenges...

    http://nanohub.org/resources/18867

  14. Physics and Simulation of Nanoscale Electronic and Thermoelectric Devices

    28 Jun 2013 | Papers | Contributor(s): raseong kim

    For the past few decades, transistors have been continuously scaled. Dimensions are now at the nanoscale, and device performance has dramatically improved. Nanotechnology is also achieving...

    http://nanohub.org/resources/18690

  15. III-V Nanoscale MOSFETS: Physics, Modeling, and Design

    28 Jun 2013 | Papers | Contributor(s): Yang Liu

    As predicted by the International Roadmap for Semiconductors (ITRS), power consumption has been the bottleneck for future silicon CMOS technology scaling. To circumvent this limit, researchers are...

    http://nanohub.org/resources/18694

  16. Device Physics Studies of III-V and Silicon MOSFETS for Digital Logic

    28 Jun 2013 | Papers | Contributor(s): Himadri Pal

    III-V's are currently gaining a lot of attraction as possible MOSFET channel materials due to their high intrinsic mobility. Several challenges, however, need to be overcome before III-V's can...

    http://nanohub.org/resources/18697

  17. Quantum and Atomistic Effects in Nanoelectronic Transport Devices

    28 Jun 2013 | Papers | Contributor(s): Neophytos Neophytou

    As devices scale towards atomistic sizes, researches in silicon electronic device technology are investigating alternative structures and materials. As predicted by the International Roadmap for...

    http://nanohub.org/resources/18705

  18. Inelastic Transport in Carbon Nanotube Electronic and Optoelectronic Devices

    28 Jun 2013 | Papers | Contributor(s): Siyu Koswatta

    Discovered in the early 1990's, carbon nanotubes (CNTs) are found to have exceptional physical characteristics compared to conventional semiconductor materials, with much potential for devices...

    http://nanohub.org/resources/18707

  19. Electron Phonon Interaction in Carbon Nanotube Devices

    28 Jun 2013 | Papers | Contributor(s): Sayed Hasan

    With the end of silicon technology scaling in sight, there has been a lot of interest in alternate novel channel materials and device geometry. Carbon nanotubes, the ultimate one-dimensional (1D)...

    http://nanohub.org/resources/18733

  20. Exploring New Channel Materials for Nanoscale CMOS

    28 Jun 2013 | Papers | Contributor(s): Anisur Rahman

    The improved transport properties of new channel materials, such as Ge and III-V semiconductors, along with new device designs, such as dual gate, tri gate or FinFETs, are expected to enhance the...

    http://nanohub.org/resources/18738

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