Resources (41-60 of 72)

1. RF Solid-State Vibrating Transistors

   15 Feb 2014 | | Contributor(s):: Dana Weinstein

   In this talk, I will discuss the Resonant Body Transistor (RBT), which can be integrated into a standard CMOS process. The first hybrid RF MEMS-CMOS resonators in Si at the transistor level of IBM’s SOI CMOS process, without any post-processing or packaging will be described. ...

2. The Berkeley Model Development Environment: A MATLAB-based Platform for Modeling and Analyzing Nanoscale Devices and Circuits

   08 Jan 2014 | | Contributor(s):: Tianshi Wang, Jaijeet Roychowdhury

   In this talk, we will provide a tutorial-style introduction to MDE, including how to use it to create and analyze custom device models.

3. Tunnel FETs - Device Physics and Realizations

   10 Jul 2013 | | Contributor(s):: Joachim Knoch

   Here, the operating principles of TFETs will be discussed in detail and experimental realizations as well as simulation results will be presented. In particular, the role of the injecting source contact will be elaborated on.

4. The Road Ahead for Carbon Nanotube Transistors

   09 Jul 2013 | | Contributor(s):: Aaron Franklin

   In this talk, recent advancements in the nanotube transistor field will be reviewed, showing why CNTFETs are worth considering now more than ever. Then, the material- and device-related challenges to realizing a nanotube-driven digital technology will be covered.

5. Semiconductor Device Fundamentals Testbook Module A: Semiconductor Basics

   01 Jul 2013 | | Contributor(s):: Robert F. Pierret

   This is module A (part 1) of the Testbook for Semiconductor Device Fundamentals.

6. Semiconductor Device Fundamentals Testbook Module B: Diode Basics

   01 Jul 2013 | | Contributor(s):: Robert F. Pierret

   This is module B (part 2) of the Testbook for Semiconductor Device Fundamentals.

7. Semiconductor Device Fundamentals Testbook Module C: Transistor Basics

   01 Jul 2013 | | Contributor(s):: Robert F. Pierret

   This is module C (part 3) of the Testbook for Semiconductor Device Fundamentals.

8. Physics and Simulation of Nanoscale Electronic and Thermoelectric Devices

   28 Jun 2013 | | Contributor(s):: raseong kim

   For the past few decades, transistors have been continuously scaled. Dimensions are now at the nanoscale, and device performance has dramatically improved. Nanotechnology is also achieving breakthroughs in thermoelectrics, which have suffered from low efficiencies for decades. As the device scale...

9. Device Physics Studies of III-V and Silicon MOSFETS for Digital Logic

   28 Jun 2013 | | Contributor(s):: Himadri Pal

   III-V's are currently gaining a lot of attraction as possible MOSFET channel materials due to their high intrinsic mobility. Several challenges, however, need to be overcome before III-V's can replace silicon (Si) in extremely scaled devices. The effect of low density-of-states of III-V materials...

10. III-V Nanoscale MOSFETS: Physics, Modeling, and Design

    28 Jun 2013 | | Contributor(s):: Yang Liu

    As predicted by the International Roadmap for Semiconductors (ITRS), power consumption has been the bottleneck for future silicon CMOS technology scaling. To circumvent this limit, researchers are investigating alternative structures and materials, among which III-V compound semiconductor-based...

11. Quantum and Atomistic Effects in Nanoelectronic Transport Devices

    28 Jun 2013 | | Contributor(s):: Neophytos Neophytou

    As devices scale towards atomistic sizes, researches in silicon electronic device technology are investigating alternative structures and materials. As predicted by the International Roadmap for Semiconductors, (ITRS), structures will evolve from planar devices into devices that include 3D...

12. Inelastic Transport in Carbon Nanotube Electronic and Optoelectronic Devices

    28 Jun 2013 | | Contributor(s):: Siyu Koswatta

    Discovered in the early 1990's, carbon nanotubes (CNTs) are found to have exceptional physical characteristics compared to conventional semiconductor materials, with much potential for devices surpassing the performance of present-day electronics. Semiconducting CNTs have large carrier mobilities...

13. Electron Phonon Interaction in Carbon Nanotube Devices

    28 Jun 2013 | | Contributor(s):: Sayed Hasan

    With the end of silicon technology scaling in sight, there has been a lot of interest in alternate novel channel materials and device geometry. Carbon nanotubes, the ultimate one-dimensional (1D) wire, is one such possibility. Since the report of the first CNT transistors, lots has been learned...

14. Exploring New Channel Materials for Nanoscale CMOS

    28 Jun 2013 | | Contributor(s):: Anisur Rahman

    The improved transport properties of new channel materials, such as Ge and III-V semiconductors, along with new device designs, such as dual gate, tri gate or FinFETs, are expected to enhance the performance of nanoscale CMOS devices. Novel process techniques, such as ALD, high-# dielectrics, and...

15. Device Physics and Simulation of Silicon Nanowire Transistors

    28 Jun 2013 | | Contributor(s):: Jing Wang

    As the conventional silicon metal-oxide-semiconductor field-effect transistor (MOSFET) approaches its scaling limits, many novel device structures are being extensively explored. Among them, the silicon nanowire transistor (SNWT) has attracted broad attention from both the semiconductor industry...

16. Carbon Nanotube Electronics: Modeling, Physics, and Applications

    28 Jun 2013 | | Contributor(s):: Jing Guo

    In recent years, significant progress in understanding the physics of carbon nanotube electronic devices and in identifying potential applications has occurred. In a nanotube, low bias transport can be nearly ballistic across distances of several hundred nanometers. Deposition of high-k gate...

17. Modeling Quantum Transport in Nanoscale Transistors

    28 Jun 2013 | | Contributor(s):: Ramesh Venugopal

    As critical transistor dimensions scale below the 100 nm (nanoscale) regime, quantum mechanical effects begin to manifest themselves and affect important device performance metrics. Therefore, simulation tools which can be applied to design nanoscale transistors in the future, require new theory...

18. Physics and Simulation of Quasi-Ballistic Transport in Nanoscale Transistors

    28 Jun 2013 | | Contributor(s):: Jung-Hoon Rhew

    The formidable progress in microelectronics in the last decade has pushed thechannel length of MOSFETs into decanano scale and the speed of BJTs into hundreds of gigahertz. This progress imposes new challenges on device simulation as the essential physics of carrier transport departs that of...

19. Nanoscale MOSFETS: Physics, Simulation and Design

    28 Jun 2013 | | Contributor(s):: Zhibin Ren

    This thesis discusses device physics, modeling and design issues of nanoscale transistors at the quantum level. The principle topics addressed in this report are 1) an implementation of appropriate physics and methodology in device modeling, 2)development of a new TCAD (technology computer aided...

20. Two-Dimensional Scattering Matrix Simulations of Si MOSFET'S

    28 Jun 2013 | | Contributor(s):: Carl R. Huster

    For many years now, solid state device simulators have been based on the drift-diffusion equations. As transistor sizes have been reduced, there has been considerable concern about the predictive capability of these simulators. This concern has lead to the development of a number of simulation...