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Tags: NEEDS node

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  1. MVS Nanotransistor Model (Silicon)

    23 Oct 2014 | Compact Models

    The MIT Virtual Source (MVS) model is a semi-empirical compact model for nanoscale transistors that accurately describes the physics of quasi-ballistic transistors with only a few physical parameters.

    http://nanohub.org/publications/15/?v=1

  2. Stanford University Resistive-Switching Random Access Memory (RRAM) Verilog-A Model

    23 Oct 2014 | Compact Models

    The Stanford University RRAM Model is a SPICE-compatible compact model which describes switching performance for bipolar metal oxide RRAM.

    http://nanohub.org/publications/19/?v=1

  3. Purdue Nanoelectronics Research Laboratory Magnetic Tunnel Junction Model

    23 Oct 2014 | Compact Models

    This is the Verilog-A model of the magnetic tunnel junction developed by the Nanoelectronics Research Laboratory at Purdue University.

    http://nanohub.org/publications/16/?v=1

  4. FET pH Sensor Model

    23 Oct 2014 | Compact Models

    The FET pH sensor model is a surface potential compact model for FET based pH sensors that accurately describes the physics of electrolyte and surface charges that respond to pH.

    http://nanohub.org/publications/11/?v=1

  5. TAG Solar Cell Model (p-i-n thin film)

    23 Oct 2014 | Compact Models

    The TAG solar cell model is a physics-based compact model for p-i-n thin film solar cells that can be used for panel level simulations.

    http://nanohub.org/publications/20/?v=1

  6. Stanford 2D Semiconductor (S2DS) Transistor Model

    22 Oct 2014 | Compact Models

    The Stanford 2D Semiconductor (S2DS) model is a physics-based, compact model for field-effect transistors (FETs) based on two-dimensional (2D) semiconductors such as MoS2.

    http://nanohub.org/publications/18/?v=1

  7. Released Resonant Body Transistor (RBT) Model

    22 Oct 2014 | Compact Models

    An RBT is a micro-electromechanical (MEM) resonator with a transistor (FET) incorporated into the resonator structure to sense the mechanical vibrations. The model is aimed to present a deep...

    http://nanohub.org/publications/17/?v=1

  8. MIT Virtual Source GaNFET-RF ( MVSG-RF) Model

    22 Oct 2014 | Compact Models

    The MVS-G-RF GaN HEMT model is a self-consistent transport/capacitance model for scaled GaN HEMT devices used in RF applications.

    http://nanohub.org/publications/14/?v=1

  9. mCell Model

    22 Oct 2014 | Compact Models

    This model is a hybrid physics/empirical compact model that describes digital switching behavior of an mCell logic devices, where a write current moves a domain wall to switch the resistance of a...

    http://nanohub.org/publications/13/?v=1

  10. III-V Tunnel FET Model

    22 Oct 2014 | Compact Models

    The III-V Tunnel FET Model is a look-up table based model, where the device current and capacitance characteristics are obtained from calibrated TCAD Sentaurus simulation.

    http://nanohub.org/publications/12/?v=1

  11. Ambipolar Virtual Source Compact Model for Graphene FETs

    22 Oct 2014 | Compact Models

    This is a compact physics-based ambipolar-virtual-source (AVS) model that describes carrier transport in both unipolar and ambipolar regimes in quasi-ballistic graphene field-effect transistors...

    http://nanohub.org/publications/10/?v=1

  12. TAG Solar Cell Model (p-i-n thin film) 1.0.0

    02 Apr 2014 | Compact Models | Contributor(s): Sourabh Dongaonkar, Xingshu Sun, Mark Lundstrom, Muhammad A. Alam

    A new Version of this resource has been released. Please see TAG Solar Cell Model (p-i-n thin film) 1.0.1. The TAG solar cell model is a physics-based compact model for p-i-n thin film solar cells...

    http://nanohub.org/resources/20775

  13. NEEDS Compact Model Development Process - v0.1

    17 Feb 2014 | Online Presentations | Contributor(s): Michael McLennan

    The Nano-Engineered Electronic Device Simulation (NEEDS) effort is focused on creating compact models for nanoelectronics. The process involves a new Berkeley Model Development Environment (MDE)...

    http://nanohub.org/resources/20359

  14. RF Solid-State Vibrating Transistors

    15 Feb 2014 | Online Presentations | Contributor(s): Dana Weinstein

    In this talk, I will discuss the Resonant Body Transistor (RBT), which can be integrated into a standard CMOS process. The first hybrid RF MEMS-CMOS resonators in Si at the transistor level of...

    http://nanohub.org/resources/20335

  15. Tunnel FETs - Device Physics and Realizations

    10 Jul 2013 | Online Presentations | Contributor(s): Joachim Knoch

    Here, the operating principles of TFETs will be discussed in detail and experimental realizations as well as simulation results will be presented. In particular, the role of the injecting source...

    http://nanohub.org/resources/18723

  16. The Road Ahead for Carbon Nanotube Transistors

    09 Jul 2013 | Online Presentations | Contributor(s): Aaron Franklin

    In this talk, recent advancements in the nanotube transistor field will be reviewed, showing why CNTFETs are worth considering now more than ever. Then, the material- and device-related challenges...

    http://nanohub.org/resources/18867

  17. Device Physics Studies of III-V and Silicon MOSFETS for Digital Logic

    28 Jun 2013 | Papers | Contributor(s): Himadri Pal

    III-V's are currently gaining a lot of attraction as possible MOSFET channel materials due to their high intrinsic mobility. Several challenges, however, need to be overcome before III-V's can...

    http://nanohub.org/resources/18697

  18. III-V Nanoscale MOSFETS: Physics, Modeling, and Design

    28 Jun 2013 | Papers | Contributor(s): Yang Liu

    As predicted by the International Roadmap for Semiconductors (ITRS), power consumption has been the bottleneck for future silicon CMOS technology scaling. To circumvent this limit, researchers are...

    http://nanohub.org/resources/18694

  19. Inelastic Transport in Carbon Nanotube Electronic and Optoelectronic Devices

    28 Jun 2013 | Papers | Contributor(s): Siyu Koswatta

    Discovered in the early 1990's, carbon nanotubes (CNTs) are found to have exceptional physical characteristics compared to conventional semiconductor materials, with much potential for devices...

    http://nanohub.org/resources/18707

  20. Physics and Simulation of Nanoscale Electronic and Thermoelectric Devices

    28 Jun 2013 | Papers | Contributor(s): raseong kim

    For the past few decades, transistors have been continuously scaled. Dimensions are now at the nanoscale, and device performance has dramatically improved. Nanotechnology is also achieving...

    http://nanohub.org/resources/18690

nanoHUB.org, a resource for nanoscience and nanotechnology, is supported by the National Science Foundation and other funding agencies. Any opinions, findings, and conclusions or recommendations expressed in this material are those of the author(s) and do not necessarily reflect the views of the National Science Foundation.