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Tags: NEEDS node

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  1. Introduction to Compact Models and Circuit Simulation

    21 Jun 2013 | Online Presentations | Contributor(s): Jaijeet Roychowdhury

    With NEEDS introduction by Mark Lundstrom. This talk contains a brief introduction to Verilog-A and suggests some initial guidelines for writing Verilog-A versions of NEEDS models.

    http://nanohub.org/resources/18678

  2. Carbon Nanotube Electronics: Modeling, Physics, and Applications

    28 Jun 2013 | Publications | Contributor(s): Jing Guo

    In recent years, significant progress in understanding the physics of carbon nanotube electronic devices and in identifying potential applications has occurred. In a nanotube, low bias transport...

    http://nanohub.org/resources/18742

  3. Computational and Experimental Study of Transport in Advanced Silicon Devices

    28 Jun 2013 | Publications | Contributor(s): Farzin Assad

    In this thesis, we study electron transport in advanced silicon devices by focusing on the two most important classes of devices: the bipolar junction transistor (BJT) and the MOSFET. In regards...

    http://nanohub.org/resources/18769

  4. Device Physics and Simulation of Silicon Nanowire Transistors

    28 Jun 2013 | Publications | Contributor(s): Jing Wang

    As the conventional silicon metal-oxide-semiconductor field-effect transistor (MOSFET) approaches its scaling limits, many novel device structures are being extensively explored. Among them, the...

    http://nanohub.org/resources/18740

  5. Device Physics Studies of III-V and Silicon MOSFETS for Digital Logic

    28 Jun 2013 | Publications | Contributor(s): Himadri Pal

    III-V's are currently gaining a lot of attraction as possible MOSFET channel materials due to their high intrinsic mobility. Several challenges, however, need to be overcome before III-V's can...

    http://nanohub.org/resources/18697

  6. Direct Solution of the Boltzmann Transport Equation in Nanoscale Si Devices

    28 Jun 2013 | Publications | Contributor(s): Kausar Banoo

    Predictive semiconductor device simulation faces a challenge these days. As devices are scaled to nanoscale lengths, the collision-dominated transport equations used in current device simulators...

    http://nanohub.org/resources/18767

  7. Electron Phonon Interaction in Carbon Nanotube Devices

    28 Jun 2013 | Publications | Contributor(s): Sayed Hasan

    With the end of silicon technology scaling in sight, there has been a lot of interest in alternate novel channel materials and device geometry. Carbon nanotubes, the ultimate one-dimensional (1D)...

    http://nanohub.org/resources/18733

  8. Exploring New Channel Materials for Nanoscale CMOS

    28 Jun 2013 | Publications | Contributor(s): Anisur Rahman

    The improved transport properties of new channel materials, such as Ge and III-V semiconductors, along with new device designs, such as dual gate, tri gate or FinFETs, are expected to enhance the...

    http://nanohub.org/resources/18738

  9. From Lilienfeld to Landauer: Understanding the nanoscale transistor

    30 Apr 2013 | Online Presentations | Contributor(s): Mark Lundstrom

    The talk is organized around the so-called Virtual Source model of the MOSFET and will show how the traditional view of the MOSFET (which dates from the 1960’s) can be adapted to today’s nanoscale...

    http://nanohub.org/resources/17719

  10. Guidelines for Writing NEEDS-certified Verilog-A Compact Models

    19 Jun 2013 | Online Presentations | Contributor(s): Tianshi Wang, Jaijeet Roychowdhury

    This talk contains a brief introduction to Verilog-A and suggests some initial guidelines for writing Verilog-A versions of NEEDS models. For more about the history of Verilog-A and additional...

    http://nanohub.org/resources/18621

  11. III-V Nanoscale MOSFETS: Physics, Modeling, and Design

    28 Jun 2013 | Publications | Contributor(s): Yang Liu

    As predicted by the International Roadmap for Semiconductors (ITRS), power consumption has been the bottleneck for future silicon CMOS technology scaling. To circumvent this limit, researchers are...

    http://nanohub.org/resources/18694

  12. Inelastic Transport in Carbon Nanotube Electronic and Optoelectronic Devices

    28 Jun 2013 | Publications | Contributor(s): Siyu Koswatta

    Discovered in the early 1990's, carbon nanotubes (CNTs) are found to have exceptional physical characteristics compared to conventional semiconductor materials, with much potential for devices...

    http://nanohub.org/resources/18707

  13. Introduction to Compact Models and Circuit Simulation

    19 Jun 2013 | Online Presentations | Contributor(s): Tianshi Wang, Jaijeet Roychowdhury

    The presentation is a gentle introduction to compact models, basic circuit simulation concepts, and flows for developing compact models. The roadmap for the NEEDS-SPICE platform, being developed...

    http://nanohub.org/resources/18616

  14. Landauer Approach to Thermoelectrics

    23 Jun 2013 | Publications | Contributor(s): Changwook Jeong

    Many efforts have been made to search for materials that maximize the thermoelectric (TE) figure of merit, ZT, but for decades, the improvement has been limited because of the interdependent...

    http://nanohub.org/resources/18681

  15. MIT Virtual-Source Tool

    07 Aug 2012 | Tools | Contributor(s): Xingshu Sun, Xufeng Wang, Yubo Sun, Mark Lundstrom

    Virtual Source Model for MOSFET compact modeling

    http://nanohub.org/resources/vsmod

  16. Modeling Quantum Transport i Nanoscale Transistors

    28 Jun 2013 | Publications | Contributor(s): Ramesh Venugopal

    As critical transistor dimensions scale below the 100 nm (nanoscale) regime, quantum mechanical effects begin to manifest themselves and affect important device performance metrics. Therefore,...

    http://nanohub.org/resources/18744

  17. Nanoscale MOSFETS: Physics, Simulation and Design

    28 Jun 2013 | Publications | Contributor(s): Zhibin Ren

    This thesis discusses device physics, modeling and design issues of nanoscale transistors at the quantum level. The principle topics addressed in this report are 1) an implementation of...

    http://nanohub.org/resources/18763

  18. NEEDS Compact Model Development Process - v0.1

    17 Feb 2014 | Online Presentations | Contributor(s): Michael McLennan

    The Nano-Engineered Electronic Device Simulation (NEEDS) effort is focused on creating compact models for nanoelectronics. The process involves a new Berkeley Model Development Environment (MDE)...

    http://nanohub.org/resources/20359

  19. NEEDS Introduction

    19 Jun 2013 | Online Presentations | Contributor(s): Mark Lundstrom

    NEEDS is an initiative supported by the National Science Foundation and the Semiconductor Research Corporation with a mission to develop the critical missing link needed to transform...

    http://nanohub.org/resources/18626

  20. NEEDS Workshop on Compact Modeling

    19 Jun 2013 | Workshops | Contributor(s): Mark Lundstrom, Jaijeet Roychowdhury

    Advanced in research promise a new era of electronics – one that harnesses the capabilities of  novel  nano-­‐engineered  materials  and  devices  either  alone  or ...

    http://nanohub.org/resources/18630

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