Tags: NEEDS node

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  1. Introduction to Compact Models and Circuit Simulation

    21 Jun 2013 | Online Presentations | Contributor(s): Jaijeet Roychowdhury

    With NEEDS introduction by Mark Lundstrom. This talk contains a brief introduction to Verilog-A and suggests some initial guidelines for writing Verilog-A versions of NEEDS models.

    http://nanohub.org/resources/18678

  2. A Tutorial Introduction to Negative-­Capacitor Landau Transistors: Perspectives on the Road Ahead

    04 Dec 2015 | Online Presentations | Contributor(s): Muhammad A. Alam

    In this talk, I use a simple graphical approach to demystify the device and explain why the experimental results are easy to misinterpret. Since the NC-FET is just a special case of a much broader...

    http://nanohub.org/resources/23157

  3. Advanced CMOS Device Physics for 7 nm and Beyond

    16 Dec 2015 | Presentation Materials | Contributor(s): Scott Thompson

    This presentation is part of 2015 IEDM tutorials The industry march along Moore's Law continues and new semiconductor nodes at 7 and beyond will certainly happen. However, many device,...

    http://nanohub.org/resources/23282

  4. Ambipolar Virtual Source Compact Model for Graphene FETs

    22 Oct 2014 | Compact Models | Contributor(s):

    By Shaloo Rakheja1, Dimitri Antoniadis1

    Massachusetts Institute of Technology (MIT)

    This is a compact physics-based ambipolar-virtual-source (AVS) model that describes carrier transport in both unipolar and ambipolar regimes in quasi-ballistic graphene field-effect transistors...

    http://nanohub.org/publications/10/?v=1

  5. Carbon Nanotube Electronics: Modeling, Physics, and Applications

    28 Jun 2013 | Papers | Contributor(s): Jing Guo

    In recent years, significant progress in understanding the physics of carbon nanotube electronic devices and in identifying potential applications has occurred. In a nanotube, low bias transport...

    http://nanohub.org/resources/18742

  6. Computational and Experimental Study of Transport in Advanced Silicon Devices

    28 Jun 2013 | Papers | Contributor(s): Farzin Assad

    In this thesis, we study electron transport in advanced silicon devices by focusing on the two most important classes of devices: the bipolar junction transistor (BJT) and the MOSFET. In regards...

    http://nanohub.org/resources/18769

  7. Device Physics and Simulation of Silicon Nanowire Transistors

    28 Jun 2013 | Papers | Contributor(s): Jing Wang

    As the conventional silicon metal-oxide-semiconductor field-effect transistor (MOSFET) approaches its scaling limits, many novel device structures are being extensively explored. Among them, the...

    http://nanohub.org/resources/18740

  8. Device Physics Studies of III-V and Silicon MOSFETS for Digital Logic

    28 Jun 2013 | Papers | Contributor(s): Himadri Pal

    III-V's are currently gaining a lot of attraction as possible MOSFET channel materials due to their high intrinsic mobility. Several challenges, however, need to be overcome before III-V's can...

    http://nanohub.org/resources/18697

  9. Direct Solution of the Boltzmann Transport Equation in Nanoscale Si Devices

    28 Jun 2013 | Papers | Contributor(s): Kausar Banoo

    Predictive semiconductor device simulation faces a challenge these days. As devices are scaled to nanoscale lengths, the collision-dominated transport equations used in current device simulators...

    http://nanohub.org/resources/18767

  10. Electron Phonon Interaction in Carbon Nanotube Devices

    28 Jun 2013 | Papers | Contributor(s): Sayed Hasan

    With the end of silicon technology scaling in sight, there has been a lot of interest in alternate novel channel materials and device geometry. Carbon nanotubes, the ultimate one-dimensional (1D)...

    http://nanohub.org/resources/18733

  11. Emerging CMOS Technology at 5 nm and Beyond: Device Options and Trade-offs

    14 Dec 2015 | Presentation Materials | Contributor(s): Mark Lundstrom, Xingshu Sun, Dimitri Antoniadis, Shaloo Rakheja

    Device Options and Trade-offs

    http://nanohub.org/resources/23273

  12. Exploring New Channel Materials for Nanoscale CMOS

    28 Jun 2013 | Papers | Contributor(s): Anisur Rahman

    The improved transport properties of new channel materials, such as Ge and III-V semiconductors, along with new device designs, such as dual gate, tri gate or FinFETs, are expected to enhance the...

    http://nanohub.org/resources/18738

  13. FET pH Sensor Model

    03 Nov 2014 | Compact Models | Contributor(s):

    By Piyush Dak1, Muhammad A. Alam1

    Purdue University

    The FET pH sensor model is a surface potential compact model for FET based pH sensors that accurately describes the physics of electrolyte and surface charges that respond to pH.

    http://nanohub.org/publications/11/?v=1

  14. From Lilienfeld to Landauer: Understanding the nanoscale transistor

    30 Apr 2013 | Online Presentations | Contributor(s): Mark Lundstrom

    The talk is organized around the so-called Virtual Source model of the MOSFET and will show how the traditional view of the MOSFET (which dates from the 1960’s) can be adapted to today’s...

    http://nanohub.org/resources/17719

  15. Guidelines for Writing NEEDS-certified Verilog-A Compact Models

    19 Jun 2013 | Online Presentations | Contributor(s): Tianshi Wang, Jaijeet Roychowdhury

    This talk contains a brief introduction to Verilog-A and suggests some initial guidelines for writing Verilog-A versions of NEEDS models. For more about the history of Verilog-A and additional...

    http://nanohub.org/resources/18621

  16. III-V Nanoscale MOSFETS: Physics, Modeling, and Design

    28 Jun 2013 | Papers | Contributor(s): Yang Liu

    As predicted by the International Roadmap for Semiconductors (ITRS), power consumption has been the bottleneck for future silicon CMOS technology scaling. To circumvent this limit, researchers are...

    http://nanohub.org/resources/18694

  17. III-V Tunnel FET Model

    20 Apr 2015 | Compact Models | Contributor(s):

    By Huichu Liu1, Vinay Saripalli1, Vijaykrishnan Narayanan1, Suman Datta1

    Penn State University

    The III-V Tunnel FET Model is a look-up table based model, where the device current and capacitance characteristics are obtained from calibrated TCAD Sentaurus simulation.

    http://nanohub.org/publications/12/?v=2

  18. Inelastic Transport in Carbon Nanotube Electronic and Optoelectronic Devices

    28 Jun 2013 | Papers | Contributor(s): Siyu Koswatta

    Discovered in the early 1990's, carbon nanotubes (CNTs) are found to have exceptional physical characteristics compared to conventional semiconductor materials, with much potential for devices...

    http://nanohub.org/resources/18707

  19. Introduction to Compact Models and Circuit Simulation

    19 Jun 2013 | Online Presentations | Contributor(s): Tianshi Wang, Jaijeet Roychowdhury

    The presentation is a gentle introduction to compact models, basic circuit simulation concepts, and flows for developing compact models. The roadmap for the NEEDS-SPICE platform, being developed...

    http://nanohub.org/resources/18616

  20. Landauer Approach to Thermoelectrics

    23 Jun 2013 | Papers | Contributor(s): Changwook Jeong

    Many efforts have been made to search for materials that maximize the thermoelectric (TE) figure of merit, ZT, but for decades, the improvement has been limited because of the interdependent...

    http://nanohub.org/resources/18681