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Tags: NEEDS node

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  1. TAG Solar Cell Model (p-i-n thin film) 1.0.0

    02 Apr 2014 | Compact Models | Contributor(s): Sourabh Dongaonkar, Xingshu Sun, Mark Lundstrom, Muhammad A. Alam

    A new Version of this resource has been released. Please see TAG Solar Cell Model (p-i-n thin film) 1.0.1. The TAG solar cell model is a physics-based compact model for p-i-n thin film solar...

    http://nanohub.org/resources/20775

  2. NEEDS Compact Model Development Process - v0.1

    17 Feb 2014 | Online Presentations | Contributor(s): Michael McLennan

    The Nano-Engineered Electronic Device Simulation (NEEDS) effort is focused on creating compact models for nanoelectronics. The process involves a new Berkeley Model Development Environment (MDE)...

    http://nanohub.org/resources/20359

  3. RF Solid-State Vibrating Transistors

    15 Feb 2014 | Online Presentations | Contributor(s): Dana Weinstein

    In this talk, I will discuss the Resonant Body Transistor (RBT), which can be integrated into a standard CMOS process. The first hybrid RF MEMS-CMOS resonators in Si at the transistor level of...

    http://nanohub.org/resources/20335

  4. Tunnel FETs - Device Physics and Realizations

    10 Jul 2013 | Online Presentations | Contributor(s): Joachim Knoch

    Here, the operating principles of TFETs will be discussed in detail and experimental realizations as well as simulation results will be presented. In particular, the role of the injecting source...

    http://nanohub.org/resources/18723

  5. The Road Ahead for Carbon Nanotube Transistors

    09 Jul 2013 | Online Presentations | Contributor(s): Aaron Franklin

    In this talk, recent advancements in the nanotube transistor field will be reviewed, showing why CNTFETs are worth considering now more than ever. Then, the material- and device-related challenges...

    http://nanohub.org/resources/18867

  6. Device Physics Studies of III-V and Silicon MOSFETS for Digital Logic

    28 Jun 2013 | Publications | Contributor(s): Himadri Pal

    III-V's are currently gaining a lot of attraction as possible MOSFET channel materials due to their high intrinsic mobility. Several challenges, however, need to be overcome before III-V's can...

    http://nanohub.org/resources/18697

  7. III-V Nanoscale MOSFETS: Physics, Modeling, and Design

    28 Jun 2013 | Publications | Contributor(s): Yang Liu

    As predicted by the International Roadmap for Semiconductors (ITRS), power consumption has been the bottleneck for future silicon CMOS technology scaling. To circumvent this limit, researchers are...

    http://nanohub.org/resources/18694

  8. Inelastic Transport in Carbon Nanotube Electronic and Optoelectronic Devices

    28 Jun 2013 | Publications | Contributor(s): Siyu Koswatta

    Discovered in the early 1990's, carbon nanotubes (CNTs) are found to have exceptional physical characteristics compared to conventional semiconductor materials, with much potential for devices...

    http://nanohub.org/resources/18707

  9. Physics and Simulation of Nanoscale Electronic and Thermoelectric Devices

    28 Jun 2013 | Publications | Contributor(s): raseong kim

    For the past few decades, transistors have been continuously scaled. Dimensions are now at the nanoscale, and device performance has dramatically improved. Nanotechnology is also achieving...

    http://nanohub.org/resources/18690

  10. Quantum and Atomistic Effects in Nanoelectronic Transport Devices

    28 Jun 2013 | Publications | Contributor(s): Neophytos Neophytou

    As devices scale towards atomistic sizes, researches in silicon electronic device technology are investigating alternative structures and materials. As predicted by the International Roadmap for...

    http://nanohub.org/resources/18705

  11. Carbon Nanotube Electronics: Modeling, Physics, and Applications

    28 Jun 2013 | Publications | Contributor(s): Jing Guo

    In recent years, significant progress in understanding the physics of carbon nanotube electronic devices and in identifying potential applications has occurred. In a nanotube, low bias transport...

    http://nanohub.org/resources/18742

  12. Computational and Experimental Study of Transport in Advanced Silicon Devices

    28 Jun 2013 | Publications | Contributor(s): Farzin Assad

    In this thesis, we study electron transport in advanced silicon devices by focusing on the two most important classes of devices: the bipolar junction transistor (BJT) and the MOSFET. In regards...

    http://nanohub.org/resources/18769

  13. Device Physics and Simulation of Silicon Nanowire Transistors

    28 Jun 2013 | Publications | Contributor(s): Jing Wang

    As the conventional silicon metal-oxide-semiconductor field-effect transistor (MOSFET) approaches its scaling limits, many novel device structures are being extensively explored. Among them, the...

    http://nanohub.org/resources/18740

  14. Direct Solution of the Boltzmann Transport Equation in Nanoscale Si Devices

    28 Jun 2013 | Publications | Contributor(s): Kausar Banoo

    Predictive semiconductor device simulation faces a challenge these days. As devices are scaled to nanoscale lengths, the collision-dominated transport equations used in current device simulators...

    http://nanohub.org/resources/18767

  15. Electron Phonon Interaction in Carbon Nanotube Devices

    28 Jun 2013 | Publications | Contributor(s): Sayed Hasan

    With the end of silicon technology scaling in sight, there has been a lot of interest in alternate novel channel materials and device geometry. Carbon nanotubes, the ultimate one-dimensional (1D)...

    http://nanohub.org/resources/18733

  16. Exploring New Channel Materials for Nanoscale CMOS

    28 Jun 2013 | Publications | Contributor(s): Anisur Rahman

    The improved transport properties of new channel materials, such as Ge and III-V semiconductors, along with new device designs, such as dual gate, tri gate or FinFETs, are expected to enhance the...

    http://nanohub.org/resources/18738

  17. Modeling Quantum Transport i Nanoscale Transistors

    28 Jun 2013 | Publications | Contributor(s): Ramesh Venugopal

    As critical transistor dimensions scale below the 100 nm (nanoscale) regime, quantum mechanical effects begin to manifest themselves and affect important device performance metrics. Therefore,...

    http://nanohub.org/resources/18744

  18. Nanoscale MOSFETS: Physics, Simulation and Design

    28 Jun 2013 | Publications | Contributor(s): Zhibin Ren

    This thesis discusses device physics, modeling and design issues of nanoscale transistors at the quantum level. The principle topics addressed in this report are 1) an implementation of...

    http://nanohub.org/resources/18763

  19. Physics and Simulation of Quasi-Ballistic Transport in Nanoscale Transistors

    28 Jun 2013 | Publications | Contributor(s): Jung-Hoon Rhew

    The formidable progress in microelectronics in the last decade has pushed the channel length of MOSFETs into decanano scale and the speed of BJTs into hundreds of gigahertz. This progress imposes...

    http://nanohub.org/resources/18747

  20. Two-Dimensional Scattering Matrix Simulations of Si MOSFET'S

    28 Jun 2013 | Publications | Contributor(s): Carl R. Huster

    For many years now, solid state device simulators have been based on the drift-diffusion equations. As transistor sizes have been reduced, there has been considerable concern about the predictive...

    http://nanohub.org/resources/18765

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