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The non-equilibrium Greens function (NEGF) formalism provides a powerful conceptual and computational framework for treating quantum transport in nanodevices. It goes beyond the Landauer approach for ballistic, non-interacting electronics to include inelastic scattering and strong correlation effects at an atomistic level.
Check out Supriyo Datta's NEGF page for more information, or browse through the various resources listed below.
Atomistic Modeling of Nano Devices: From Qubits to Transistors
13 Apr 2016 | Online Presentations | Contributor(s): Rajib Rahman
In this talk, I will describe such a framework that can capture complex interactions ranging from exchange and spin-orbit-valley coupling in spin qubits to non-equilibrium charge transport in...
Tutorial 4a: High Bias Quantum Transport in Resonant Tunneling Diodes
29 Mar 2011 | Online Presentations | Contributor(s): Gerhard Klimeck
Resonant Tunneling Diodes - NEMO1D: Motivation / History / Key Insights
Open 1D Systems: Transmission through Double Barrier Structures - Resonant Tunneling
Introduction to RTDs:...
Lecture 3: Introduction to NEGF
08 Sep 2010 | Online Presentations | Contributor(s): Supriyo Datta
“Electronics from the Bottom Up” is an educational initiative designed to bring a new perspective to the field of nano device engineering. It is co-sponsored by the Intel Foundation and...
Nonequilibrium Green’s functions theory: Transport and optical gain in THz quantum cascade lasers
26 Mar 2010 | Online Presentations | Contributor(s): Tillmann Christoph Kubis
Quantum cascade lasers (QCLs) are promising sources of coherent THz radiation. However, state of the art THz-QCLs are still limited to cryogenic temperatures. The charge transport in these QCLs is...
Nanoelectronic Modeling nanoHUB Demo 2: RTD simulation with NEGF
09 Mar 2010 | Online Presentations | Contributor(s): Gerhard Klimeck
Demonstration of resonant tunneling diode (RTD) simulation using the RTD Simulation with NEGF Tool with a Hartree potential model showing potential profile, charge densities, current-voltage...
Nanoelectronic Modeling nanoHUB Demo 1: nanoHUB Tool Usage with RTD Simulation with NEGF
Demonstration of running tools on the nanoHUB. Demonstrated is the RTD Simulation with NEGF Tool using a simple level-drop potential model and a more realistic device using a Thomas-Fermi...
Nanoelectronic Modeling Lecture 26: NEMO1D -
NEMO1D demonstrated the first industrial strength implementation of NEGF into a simulator that quantitatively simulated resonant tunneling diodes. The development of efficient algorithms that...
ECET 499N Lecture 5a: Nanoelectronics III - Datta Lecture Review
19 Feb 2010 | Online Presentations | Contributor(s): Helen McNally
Nanoelectronic Modeling Lecture 22: NEMO1D - Motivation, History and Key Insights
07 Feb 2010 | Online Presentations | Contributor(s): Gerhard Klimeck
The primary objective of the NEMO-1D tool was the quantitative modeling of high performance Resonant Tunneling Diodes (RTDs). The software tool was intended for Engineers (concepts, fast...
Nanoelectronic Modeling Lecture 21: Recursive Green Function Algorithm
The Recursive Green Function (RGF) algorithms is the primary workhorse for the numerical solution of NEGF equations in quasi-1D systems. It is particularly efficient in cases where the device is...
Nanoelectronic Modeling Lecture 20: NEGF in a Quasi-1D Formulation
27 Jan 2010 | Online Presentations | Contributor(s): Gerhard Klimeck, Samarth Agarwal, Zhengping Jiang
This lecture will introduce a spatial discretization scheme of the Schrödinger equation which represents a 1D heterostructure like a resonant tunneling diode with spatially varying band edges and...
Nanoelectronic Modeling Lecture 19: Introduction to RTDs - Asymmetric Structures
27 Jan 2010 | Online Presentations | Contributor(s): Gerhard Klimeck
This lecture explores this effect in more detail by targeting an RTD that has a deliberate asymmetric structure. The collector barrier is chosen thicker than the emitter barrier. With this...
Nanoelectronic Modeling Lecture 17: Introduction to RTDs - Relaxation Scattering in the Emitter
Realistic RTDs will have nonlinear electrostatic potential in their emitter. Typically a triangular well is formed in the emitter due to the applied bias and the emitter thus contains discrete...
Lecture 2: Graphene Fundamentals
22 Sep 2009 | Online Presentations | Contributor(s): Supriyo Datta
Network for Computational Nanotechnology,
Lecture 6: Graphene PN Junctions
22 Sep 2009 | Online Presentations | Contributor(s): Mark Lundstrom
Electron optics in graphene
Transmission across NP junctions
Conductance of PN and NN junctions
Network for Computational Nanotechnology,
Lecture 3: Low Bias Transport in Graphene: An Introduction
18 Sep 2009 | Online Presentations | Contributor(s): Mark Lundstrom
Introduction and Objectives
Lecture notes are available for this lecture.
ECE 659 Lecture 42: Summing Up
04 May 2009 | Online Presentations | Contributor(s): Supriyo Datta
ECE 659 Lecture 38.0: Correlations and Entanglement
This lecture is from the series of lectures
Nanoelectronics and the Meaning of Resistance.
ECE 659 Lecture 36: Law of Equilibrium
01 May 2009 | Online Presentations | Contributor(s): Supriyo Datta
ECE 659 Lecture 18: NEGF Equations
03 Mar 2009 | Online Presentations | Contributor(s): Supriyo Datta