Tags: NEGF

Description

The non-equilibrium Greens function (NEGF) formalism provides a powerful conceptual and computational framework for treating quantum transport in nanodevices. It goes beyond the Landauer approach for ballistic, non-interacting electronics to include inelastic scattering and strong correlation effects at an atomistic level.

Check out Supriyo Datta's NEGF page for more information, or browse through the various resources listed below.

Online Presentations (61-71 of 71)

  1. Nanoscale Transistors: Advanced VLSI Devices (Introductory Lecture)

    20 Apr 2006 | | Contributor(s):: Mark Lundstrom

    Welcome to the ECE 612 Introductory/Overview lecture. This course examines the device physics of advanced transistors and the process, device, circuit, and systems considerations that enter into the development of new integrated circuit technologies.

  2. Molecular Transport Structures: Elastic Scattering, Vibronic Effects and Beyond

    13 Feb 2006 | | Contributor(s):: Mark Ratner, Abraham Nitzan,

    Current experimental efforts are clarifying quite beautifully the nature of charge transport in so-called molecular junctions, in which a single molecule provides the channel for current flow between two electrodes. The theoretical modeling of such structures is challenging, because of the...

  3. A Top-Down Introduction to the NEGF Approach

    14 Jun 2004 | | Contributor(s):: Mark Lundstrom

    A Top-Down Introduction to the NEGF Approach

  4. Bandstructure in Nanoelectronics

    01 Nov 2005 | | Contributor(s):: Gerhard Klimeck

    This presentation will highlight, for nanoelectronic device examples, how the effective mass approximation breaks down and why the quantum mechanical nature of the atomically resolved material needs to be included in the device modeling. Atomistic bandstructure effects in resonant tunneling...

  5. Simple Theory of the Ballistic MOSFET

    11 Oct 2005 | | Contributor(s):: Mark Lundstrom

    Silicon nanoelectronics has become silicon nanoelectronics, but we still analyze, design, and think about MOSFETs in more or less in the same way that we did 30 years ago. In this talk, I will describe a simple analysis of the ballistic MOSFET. No MOSFET is truly ballistic, but approaching this...

  6. Parallel Computing for Realistic Nanoelectronic Simulations

    12 Sep 2005 | | Contributor(s):: Gerhard Klimeck

    Typical modeling and simulation efforts directed towards the understanding of electron transport at the nanometer scale utilize single workstations as computational engines. Growing understanding of the involved physics and the need to model realistically extended devices increases the complexity...

  7. Review of Several Quantum Solvers and Applications

    11 Jun 2004 | | Contributor(s):: Umberto Ravaioli

    Review of Several Quantum Solvers and Applications

  8. Numerical Aspects of NEGF: The Recursive Green Function Algorithm

    14 Jun 2004 | | Contributor(s):: Gerhard Klimeck

    Numerical Aspects of NEGF: The Recursive Green Function Algorithm

  9. Huckel-IV on the nanoHub

    09 Jul 2003 | | Contributor(s):: Magnus Paulsson, Ferdows Zahid, Supriyo Datta

    Huckel-IV on the nanoHub

  10. Understanding Molecular Conduction

    08 Jul 2004 | | Contributor(s):: Supriyo Datta

    It is common to differentiate between two ways of building a nanodevice: a topdown approach where we start from something big and chisel out what we want and abottom-up approach where we start from something small like atoms or molecules andassemble what we want. When it comes to describing...

  11. NEMO 1-D: The First NEGF-based TCAD Tool and Network for Computational Nanotechnology

    28 Dec 2004 | | Contributor(s):: Gerhard Klimeck

    Nanotechnology has received a lot of public attention since U.S. President Clinton announced the U.S.National Nanotechnology Initiative. New approaches to applications in electronics, materials,medicine, biology and a variety of other areas will be developed in this new multi-disciplinary...