
Modular Approach to Spintronics
28 Apr 2015   Contributor(s):: Kerem Yunus Camsari
There has been enormous progress in the last two decades, effectively combining spintronics and magnetics into a powerful force that is shaping the field of memory devices. New materials and phenomena continue to be discovered at an impressive rate, providing an everincreasing set of building...

Efficiency Enhancement for Nanoelectronic Transport Simulations
02 Feb 2014   Contributor(s):: Jun Huang
PhD thesis of Jun HuangContinual technology innovations make it possible to fabricate electronic devices on the order of 10nm. In this nanoscale regime, quantum physics becomes critically important, like energy quantization effects of the narrow channel and the leakage currents due to tunneling....

Physics and Simulation of Nanoscale Electronic and Thermoelectric Devices
28 Jun 2013   Contributor(s):: raseong kim
For the past few decades, transistors have been continuously scaled. Dimensions are now at the nanoscale, and device performance has dramatically improved. Nanotechnology is also achieving breakthroughs in thermoelectrics, which have suffered from low efficiencies for decades. As the device scale...

Device Physics Studies of IIIV and Silicon MOSFETS for Digital Logic
28 Jun 2013   Contributor(s):: Himadri Pal
IIIV's are currently gaining a lot of attraction as possible MOSFET channel materials due to their high intrinsic mobility. Several challenges, however, need to be overcome before IIIV's can replace silicon (Si) in extremely scaled devices. The effect of low densityofstates of IIIV materials...

Quantum and Atomistic Effects in Nanoelectronic Transport Devices
28 Jun 2013   Contributor(s):: Neophytos Neophytou
As devices scale towards atomistic sizes, researches in silicon electronic device technology are investigating alternative structures and materials. As predicted by the International Roadmap for Semiconductors, (ITRS), structures will evolve from planar devices into devices that include 3D...

Exploring New Channel Materials for Nanoscale CMOS
28 Jun 2013   Contributor(s):: Anisur Rahman
The improved transport properties of new channel materials, such as Ge and IIIV semiconductors, along with new device designs, such as dual gate, tri gate or FinFETs, are expected to enhance the performance of nanoscale CMOS devices. Novel process techniques, such as ALD, high# dielectrics, and...

Carbon Nanotube Electronics: Modeling, Physics, and Applications
28 Jun 2013   Contributor(s):: Jing Guo
In recent years, significant progress in understanding the physics of carbon nanotube electronic devices and in identifying potential applications has occurred. In a nanotube, low bias transport can be nearly ballistic across distances of several hundred nanometers. Deposition of highk gate...

Physics and Simulation of QuasiBallistic Transport in Nanoscale Transistors
28 Jun 2013   Contributor(s):: JungHoon Rhew
The formidable progress in microelectronics in the last decade has pushed thechannel length of MOSFETs into decanano scale and the speed of BJTs into hundreds of gigahertz. This progress imposes new challenges on device simulation as the essential physics of carrier transport departs that of...

Dissipative Quantum Transport in Semiconductor Nanostructures
28 Dec 2011   Contributor(s):: Peter Greck
In this work, we investigate dissipative quantum transport properties of an open system. After presenting the background of ballistic quantum transport calculations, a simple scattering mechanism, called Büttiker Probes, is introduced. Then, we assess the properties of the Büttiker Probe model...

Surface scattering: Made simple
03 Sep 2010   Contributor(s):: Dmitri Nikonov, Himadri Pal
Surface scattering in a quantum well.

Quantum transport in semiconductor nanostructures
04 Mar 2010   Contributor(s):: Tillmann Christoph Kubis
PhD thesis of Tillmann Christoph KubisThe main objective of this thesis is to theoretically predict the stationary charge and spin transport in mesoscopic semiconductor quantum devices in the presence of phonons and device imperfections. It is well known that the nonequilibrium Green's function...

Scattering in NEGF: Made simple
09 Nov 2009   Contributor(s):: Dmitri Nikonov, Himadri Pal, George Bourianoff
Formalism for describing electronphonon scattering, surface scattering, and spin relaxation is dervied for the Keldysh nonequilibrium Green's functions (NEGF) method. Approximation useful for efficient numerical solution are described. The specific case of the nanoMOS simulator is...

Application of the Keldysh Formalism to Quantum Device Modeling and Analysis
14 Jan 2008   Contributor(s):: Roger Lake
The effect of inelastic scattering on quantum electron transport through layered semiconductor structures is studied numerically using the approach based on the nonequilibrium Green's function formalism of Keldysh, Kadanoff, and Baym. The Markov assumption is not made, and the energy coordinate...

ElectronPhonon and ElectronElectron Interactions in Quantum Transport
14 Jan 2008   Contributor(s):: Gerhard Klimeck
The objective of this work is to shed light on electron transport through submicron semiconductor structures, where electronic state quantization, electronelectron interactions and electronphonon interactions are important. We concentrate here on the most developed vertical quantum device,...

Multidimensional nanoscale device modeling: the finite element method applied to the nonequilibrium Green's function formalism
31 Oct 2006   Contributor(s):: POLIZZI ERIC, Supriyo Datta
This work deals with the modeling and the numerical simulation of quantum transport in multidimensional open nanoscale devices. The electron transport in the device is described using the NonEquilibrium Green's Functions (NEGF) formalism and the variational form of the problem is solved using...

Non Equilibrium Green's Functions for Dummies: Introduction to the One Particle NEGF equations
30 Oct 2006   Contributor(s):: Magnus Paulsson
Non equilibrium Green's function methods are regularly used to calculate current and charge densities in nanoscale (both molecular and semiconductor) conductors under bias. This method is mainly used for ballistic conduction but may be extended to include inelastic scattering. In this tutorial...

Modeling Quantum Transport in Nanoscale Transistors
30 Oct 2006   Contributor(s):: ramesh venugopal
As critical transistor dimensions scale below the 100 nm (nanoscale) regime, quan tum mechanical effects begin to manifest themselves and affect important device performance metrics. Therefore, simulation tools which can be applied to design nanoscale transistors in the future, require new...

Carbon Nanotube Electronics: Modeling, Physics, and Applications
30 Oct 2006   Contributor(s):: Jing Guo
In recent years, significant progress in understanding the physics of carbon nanotube electronic devices and in identifying potential applications has occurred. In a nanotube, low bias transport can be nearly ballistic across distances of several hundred nanometers. Deposition of highκ gate...

A ThreeDimensional Quantum Simulation of Silicon Nanowire Transistors with the EffectiveMass Approximation
30 Oct 2006   Contributor(s):: Jing Wang, POLIZZI ERIC, Mark Lundstrom
The silicon nanowire transistor (SNWT) is a promising device structure for future integrated circuits, and simulations will be important for understanding its device physics and assessing its ultimate performance limits. In this work, we present a threedimensional quantum mechanical simulation...

Electrical Resistance: an Atomistic View
26 Oct 2006   Contributor(s):: Supriyo Datta
This tutorial article presents a “bottomup” view of electrical resistance starting from something really small, like a molecule, and then discussing the issues that arise as we move to bigger conductors. Remark ably enough, no serious quantum mechanics is needed to understand electrical...