Tags: NEGF

Description

The non-equilibrium Greens function (NEGF) formalism provides a powerful conceptual and computational framework for treating quantum transport in nanodevices. It goes beyond the Landauer approach for ballistic, non-interacting electronics to include inelastic scattering and strong correlation effects at an atomistic level.

Check out Supriyo Datta's NEGF page for more information, or browse through the various resources listed below.

Papers (1-20 of 35)

  1. Modular Approach to Spintronics

    28 Apr 2015 | Papers | Contributor(s): Kerem Yunus Camsari

    There has been enormous progress in the last two decades, effectively combining spintronics and magnetics into a powerful force that is shaping the field of memory devices. New materials and...

    http://nanohub.org/resources/22224

  2. Efficiency Enhancement for Nanoelectronic Transport Simulations

    02 Feb 2014 | Papers | Contributor(s): Jun Huang

    PhD thesis of Jun Huang Continual technology innovations make it possible to fabricate electronic devices on the order of 10nm. In this nanoscale regime, quantum physics becomes critically...

    http://nanohub.org/resources/20248

  3. Physics and Simulation of Nanoscale Electronic and Thermoelectric Devices

    28 Jun 2013 | Papers | Contributor(s): raseong kim

    For the past few decades, transistors have been continuously scaled. Dimensions are now at the nanoscale, and device performance has dramatically improved. Nanotechnology is also achieving...

    http://nanohub.org/resources/18690

  4. Device Physics Studies of III-V and Silicon MOSFETS for Digital Logic

    28 Jun 2013 | Papers | Contributor(s): Himadri Pal

    III-V's are currently gaining a lot of attraction as possible MOSFET channel materials due to their high intrinsic mobility. Several challenges, however, need to be overcome before III-V's can...

    http://nanohub.org/resources/18697

  5. Quantum and Atomistic Effects in Nanoelectronic Transport Devices

    28 Jun 2013 | Papers | Contributor(s): Neophytos Neophytou

    As devices scale towards atomistic sizes, researches in silicon electronic device technology are investigating alternative structures and materials. As predicted by the International Roadmap for...

    http://nanohub.org/resources/18705

  6. Exploring New Channel Materials for Nanoscale CMOS

    28 Jun 2013 | Papers | Contributor(s): Anisur Rahman

    The improved transport properties of new channel materials, such as Ge and III-V semiconductors, along with new device designs, such as dual gate, tri gate or FinFETs, are expected to enhance the...

    http://nanohub.org/resources/18738

  7. Carbon Nanotube Electronics: Modeling, Physics, and Applications

    28 Jun 2013 | Papers | Contributor(s): Jing Guo

    In recent years, significant progress in understanding the physics of carbon nanotube electronic devices and in identifying potential applications has occurred. In a nanotube, low bias transport...

    http://nanohub.org/resources/18742

  8. Physics and Simulation of Quasi-Ballistic Transport in Nanoscale Transistors

    28 Jun 2013 | Papers | Contributor(s): Jung-Hoon Rhew

    The formidable progress in microelectronics in the last decade has pushed the channel length of MOSFETs into decanano scale and the speed of BJTs into hundreds of gigahertz. This progress imposes...

    http://nanohub.org/resources/18747

  9. Dissipative Quantum Transport in Semiconductor Nanostructures

    28 Dec 2011 | Papers | Contributor(s): Peter Greck

    In this work, we investigate dissipative quantum transport properties of an open system. After presenting the background of ballistic quantum transport calculations, a simple scattering mechanism,...

    http://nanohub.org/resources/12756

  10. Surface scattering: Made simple

    03 Sep 2010 | Papers | Contributor(s): Dmitri Nikonov, Himadri Pal

    Surface scattering in a quantum well.

    http://nanohub.org/resources/9613

  11. Quantum transport in semiconductor nanostructures

    04 Mar 2010 | Papers | Contributor(s): Tillmann Christoph Kubis

    PhD thesis of Tillmann Christoph Kubis The main objective of this thesis is to theoretically predict the stationary charge and spin transport in mesoscopic semiconductor quantum devices in the...

    http://nanohub.org/resources/8612

  12. Scattering in NEGF: Made simple

    09 Nov 2009 | Papers | Contributor(s): Dmitri Nikonov, Himadri Pal, George Bourianoff

    Formalism for describing electron-phonon scattering, surface scattering, and spin relaxation is dervied for the Keldysh non-equilibrium Green's functions (NEGF) method. Approximation useful for...

    http://nanohub.org/resources/7772

  13. Application of the Keldysh Formalism to Quantum Device Modeling and Analysis

    14 Jan 2008 | Papers | Contributor(s): Roger Lake

    The effect of inelastic scattering on quantum electron transport through layered semi-conductor structures is studied numerically using the approach based on the non-equilibrium Green's function...

    http://nanohub.org/resources/3833

  14. Electron-Phonon and Electron-Electron Interactions in Quantum Transport

    14 Jan 2008 | Papers | Contributor(s): Gerhard Klimeck

    The objective of this work is to shed light on electron transport through sub-micron semi-conductor structures, where electronic state quantization, electron-electron interactions and...

    http://nanohub.org/resources/3831

  15. Multidimensional nanoscale device modeling: the finite element method applied to the non-equilibrium Green's function formalism

    31 Oct 2006 | Papers | Contributor(s): Eric Polizzi, Supriyo Datta

    This work deals with the modeling and the numerical simulation of quantum transport in multidimensional open nanoscale devices. The electron transport in the device is described using the...

    http://nanohub.org/resources/1935

  16. Non Equilibrium Green's Functions for Dummies: Introduction to the One Particle NEGF equations

    30 Oct 2006 | Papers | Contributor(s): Magnus Paulsson

    Non equilibrium Green's function methods are regularly used to calculate current and charge densities in nanoscale (both molecular and semiconductor) conductors under bias. This method is mainly...

    http://nanohub.org/resources/1932

  17. Modeling Quantum Transport in Nanoscale Transistors

    30 Oct 2006 | Papers | Contributor(s): Ramesh Venugopal

    As critical transistor dimensions scale below the 100 nm (nanoscale) regime, quan- tum mechanical effects begin to manifest themselves and affect important device performance metrics....

    http://nanohub.org/resources/1930

  18. Carbon Nanotube Electronics: Modeling, Physics, and Applications

    30 Oct 2006 | Papers | Contributor(s): Jing Guo

    In recent years, significant progress in understanding the physics of carbon nanotube electronic devices and in identifying potential applications has occurred. In a nanotube, low bias...

    http://nanohub.org/resources/1928

  19. A Three-Dimensional Quantum Simulation of Silicon Nanowire Transistors with the Effective-Mass Approximation

    30 Oct 2006 | Papers | Contributor(s): Jing Wang, Eric Polizzi, Mark Lundstrom

    The silicon nanowire transistor (SNWT) is a promising device structure for future integrated circuits, and simulations will be important for understanding its device physics and assessing its...

    http://nanohub.org/resources/1926

  20. Electrical Resistance: an Atomistic View

    26 Oct 2006 | Papers | Contributor(s): Supriyo Datta

    This tutorial article presents a “bottom-up” view of electrical resistance starting from something really small, like a molecule, and then discussing the issues that arise as we move to bigger...

    http://nanohub.org/resources/1919