
Modular Approach to Spintronics
28 Apr 2015  Papers  Contributor(s): Kerem Yunus Camsari
There has been enormous progress in the last two decades, effectively combining spintronics and magnetics into a powerful force that is shaping the field of memory devices. New materials and...
http://nanohub.org/resources/22224

Efficiency Enhancement for Nanoelectronic Transport Simulations
02 Feb 2014  Papers  Contributor(s): Jun Huang
PhD thesis of Jun Huang
Continual technology innovations make it possible to fabricate electronic devices on the order of 10nm. In this nanoscale regime, quantum physics becomes critically...
http://nanohub.org/resources/20248

Physics and Simulation of Nanoscale Electronic and Thermoelectric Devices
28 Jun 2013  Papers  Contributor(s): raseong kim
For the past few decades, transistors have been continuously scaled. Dimensions are now at the nanoscale, and device performance has dramatically improved. Nanotechnology is also achieving...
http://nanohub.org/resources/18690

Device Physics Studies of IIIV and Silicon MOSFETS for Digital Logic
28 Jun 2013  Papers  Contributor(s): Himadri Pal
IIIV's are currently gaining a lot of attraction as possible MOSFET channel materials due to their high intrinsic mobility. Several challenges, however, need to be overcome before IIIV's can...
http://nanohub.org/resources/18697

Quantum and Atomistic Effects in Nanoelectronic Transport Devices
28 Jun 2013  Papers  Contributor(s): Neophytos Neophytou
As devices scale towards atomistic sizes, researches in silicon electronic device technology are investigating alternative structures and materials. As predicted by the International Roadmap for...
http://nanohub.org/resources/18705

Exploring New Channel Materials for Nanoscale CMOS
28 Jun 2013  Papers  Contributor(s): Anisur Rahman
The improved transport properties of new channel materials, such as Ge and IIIV semiconductors, along with new device designs, such as dual gate, tri gate or FinFETs, are expected to enhance the...
http://nanohub.org/resources/18738

Carbon Nanotube Electronics: Modeling, Physics, and Applications
28 Jun 2013  Papers  Contributor(s): Jing Guo
In recent years, significant progress in understanding the physics of carbon nanotube electronic devices and in identifying potential applications has occurred. In a nanotube, low bias transport...
http://nanohub.org/resources/18742

Physics and Simulation of QuasiBallistic Transport in Nanoscale Transistors
28 Jun 2013  Papers  Contributor(s): JungHoon Rhew
The formidable progress in microelectronics in the last decade has pushed the
channel length of MOSFETs into decanano scale and the speed of BJTs into hundreds of gigahertz. This progress imposes...
http://nanohub.org/resources/18747

Dissipative Quantum Transport in Semiconductor Nanostructures
28 Dec 2011  Papers  Contributor(s): Peter Greck
In this work, we investigate dissipative quantum transport properties of an open system. After presenting the background of ballistic quantum transport calculations, a simple scattering mechanism,...
http://nanohub.org/resources/12756

Surface scattering: Made simple
03 Sep 2010  Papers  Contributor(s): Dmitri Nikonov, Himadri Pal
Surface scattering in a quantum well.
http://nanohub.org/resources/9613

Quantum transport in semiconductor nanostructures
04 Mar 2010  Papers  Contributor(s): Tillmann Christoph Kubis
PhD thesis of Tillmann Christoph Kubis
The main objective of this thesis is to theoretically predict the stationary charge and spin transport in mesoscopic semiconductor quantum devices in the...
http://nanohub.org/resources/8612

Scattering in NEGF: Made simple
09 Nov 2009  Papers  Contributor(s): Dmitri Nikonov, Himadri Pal, George Bourianoff
Formalism for describing electronphonon scattering, surface scattering, and spin relaxation is dervied for the Keldysh nonequilibrium Green's functions (NEGF) method. Approximation useful for...
http://nanohub.org/resources/7772

Application of the Keldysh Formalism to Quantum Device Modeling and Analysis
14 Jan 2008  Papers  Contributor(s): Roger Lake
The effect of inelastic scattering on quantum electron transport through layered semiconductor structures is studied numerically using the approach based on the nonequilibrium Green's function...
http://nanohub.org/resources/3833

ElectronPhonon and ElectronElectron Interactions in Quantum Transport
14 Jan 2008  Papers  Contributor(s): Gerhard Klimeck
The objective of this work is to shed light on electron transport through submicron semiconductor structures, where electronic state quantization, electronelectron interactions and...
http://nanohub.org/resources/3831

Multidimensional nanoscale device modeling: the finite element method applied to the nonequilibrium Green's function formalism
31 Oct 2006  Papers  Contributor(s): Eric Polizzi, Supriyo Datta
This work deals with the modeling and the numerical simulation of quantum transport in multidimensional open nanoscale devices. The electron transport in the device is described using the...
http://nanohub.org/resources/1935

Non Equilibrium Green's Functions for Dummies: Introduction to the One Particle NEGF equations
30 Oct 2006  Papers  Contributor(s): Magnus Paulsson
Non equilibrium Green's function methods are regularly used to calculate current and charge densities in nanoscale (both molecular and semiconductor) conductors under bias. This method is mainly...
http://nanohub.org/resources/1932

Modeling Quantum Transport in Nanoscale Transistors
30 Oct 2006  Papers  Contributor(s): Ramesh Venugopal
As critical transistor dimensions scale below the 100 nm (nanoscale) regime, quan
tum mechanical effects begin to manifest themselves and affect important device
performance metrics....
http://nanohub.org/resources/1930

Carbon Nanotube Electronics: Modeling, Physics, and Applications
30 Oct 2006  Papers  Contributor(s): Jing Guo
In recent years, significant progress in understanding the physics of carbon nanotube
electronic devices and in identifying potential applications has occurred. In a nanotube,
low bias...
http://nanohub.org/resources/1928

A ThreeDimensional Quantum Simulation of Silicon Nanowire Transistors with the EffectiveMass Approximation
30 Oct 2006  Papers  Contributor(s): Jing Wang, Eric Polizzi, Mark Lundstrom
The silicon nanowire transistor (SNWT) is a promising device structure for future
integrated circuits, and simulations will be important for understanding its device physics and
assessing its...
http://nanohub.org/resources/1926

Electrical Resistance: an Atomistic View
26 Oct 2006  Papers  Contributor(s): Supriyo Datta
This tutorial article presents a “bottomup” view of electrical resistance starting
from something really small, like a molecule, and then discussing the issues that
arise as we move to bigger...
http://nanohub.org/resources/1919