Dissipative Quantum Transport in Semiconductor Nanostructures

28 Dec 2011 | Publications | Contributor(s): Peter Greck

In this work, we investigate dissipative quantum transport properties of an open system. After presenting the background of ballistic quantum transport calculations, a simple scattering mechanism, …

https://nanohub.org/resources/12756

Surface scattering: Made simple

03 Sep 2010 | Publications | Contributor(s): Dmitri Nikonov, Himadri Pal

Surface scattering in a quantum well.

https://nanohub.org/resources/9613

Quantum transport in semiconductor nanostructures

04 Mar 2010 | Publications | Contributor(s): Tillmann Christoph Kubis

PhD thesis of Tillmann Christoph Kubis The main objective of this thesis is to theoretically predict the stationary charge and spin transport in mesoscopic semiconductor quantum devices in the …

https://nanohub.org/resources/8612

Scattering in NEGF: Made simple

09 Nov 2009 | Publications | Contributor(s): Dmitri Nikonov, Himadri Pal, George Bourianoff

Formalism for describing electron-phonon scattering, surface scattering, and spin relaxation is dervied for the Keldysh non-equilibrium Green's functions (NEGF) method. Approximation useful for …

https://nanohub.org/resources/7772

Application of the Keldysh Formalism to Quantum Device Modeling and Analysis

14 Jan 2008 | Publications | Contributor(s): Roger Lake

The effect of inelastic scattering on quantum electron transport through layered semi-conductor structures is studied numerically using the approach based on the non-equilibrium Green's function …

https://nanohub.org/resources/3833

Electron-Phonon and Electron-Electron Interactions in Quantum Transport

14 Jan 2008 | Publications | Contributor(s): Gerhard Klimeck

The objective of this work is to shed light on electron transport through sub-micron semi-conductor structures, where electronic state quantization, electron-electron interactions and electron-phonon …

https://nanohub.org/resources/3831

Multidimensional nanoscale device modeling: the finite element method applied to the non-equilibrium Green's function formalism

31 Oct 2006 | Publications | Contributor(s): Eric Polizzi, Supriyo Datta

This work deals with the modeling and the numerical simulation of quantum transport in multidimensional open nanoscale devices. The electron transport in the device is described using the …

https://nanohub.org/resources/1935

Non Equilibrium Green's Functions for Dummies: Introduction to the One Particle NEGF equations

30 Oct 2006 | Publications | Contributor(s): Magnus Paulsson

Non equilibrium Green's function methods are regularly used to calculate current and charge densities in nanoscale (both molecular and semiconductor) conductors under bias. This method is mainly used …

https://nanohub.org/resources/1932

Modeling Quantum Transport in Nanoscale Transistors

30 Oct 2006 | Publications | Contributor(s): Ramesh Venugopal

As critical transistor dimensions scale below the 100 nm (nanoscale) regime, quan- tum mechanical effects begin to manifest themselves and affect important device performance metrics. Therefore, …

https://nanohub.org/resources/1930

Carbon Nanotube Electronics: Modeling, Physics, and Applications

30 Oct 2006 | Publications | Contributor(s): Jing Guo

In recent years, significant progress in understanding the physics of carbon nanotube electronic devices and in identifying potential applications has occurred. In a nanotube, low bias transport …

https://nanohub.org/resources/1928

A Three-Dimensional Quantum Simulation of Silicon Nanowire Transistors with the Effective-Mass Approximation

30 Oct 2006 | Publications | Contributor(s): Jing Wang, Eric Polizzi, Mark Lundstrom

The silicon nanowire transistor (SNWT) is a promising device structure for future integrated circuits, and simulations will be important for understanding its device physics and assessing its …

https://nanohub.org/resources/1926

Electrical Resistance: an Atomistic View

26 Oct 2006 | Publications | Contributor(s): Supriyo Datta

This tutorial article presents a “bottom-up” view of electrical resistance starting from something really small, like a molecule, and then discussing the issues that arise as we move to …

https://nanohub.org/resources/1919

Nanoscale MOSFETs: Physics, Simulation and Design

26 Oct 2006 | Publications | Contributor(s): Zhibin Ren

This thesis discusses device physics, modeling and design issues of nanoscale transistors at the quantum level. The principle topics addressed in this report are 1) an implementation of …

https://nanohub.org/resources/1917

Modeling of Nanoscale Devices

19 Oct 2006 | Publications | Contributor(s): M. P. Anantram, Mark Lundstrom, Dmitri Nikonov

We aim to provide engineers with an introduction to the nonequilibriumGreen’s function (NEGF) approach, which is a powerful conceptual tool and a practical analysismethod to treat nanoscale …

https://nanohub.org/resources/1902

A Quantum Mechanical Analysis of Channel Access Geometry and Series Resistance in Nanoscale Transistors

19 Oct 2006 | Publications | Contributor(s): Ramesh Venugopal, Sebastien Goasguen, Supriyo Datta, Mark Lundstrom

In this paper, we apply a two-dimensional quantum mechanical simulation scheme to study the effect of channel access geometries on device performance. This simulation scheme solves the …

https://nanohub.org/resources/1900

Introduction to the Keldysh Nonequilibrium Green Function Technique

06 Oct 2006 | Publications | Contributor(s): A. P. Jauho

Keldysh nonequilibrium Green function technique is used very widely to describe transport phenomena in mesoscopic systems. The technique is somewhat subtle, and a rigorous treatment would require …

https://nanohub.org/resources/1877

nanoMOS 2.0: A Two -Dimensional Simulator for Quantum Transport in Double-Gate MOSFETs

06 Oct 2006 | Publications | Contributor(s): Zhibin Ren, Ramesh Venugopal, Sebastien Goasguen, Supriyo Datta, Mark Lundstrom

A program to numerically simulate quantum transport in double gate MOSFETs is described. The program uses a Green’s function approach and a simple treatment of scattering based on the idea of …

https://nanohub.org/resources/1875

Simulating Quantum Transport in Nanoscale Transistors: Real versus Mode-Space Approaches

28 Sep 2006 | Publications | Contributor(s): Zhibin Ren, Supriyo Datta, Mark Lundstrom, Ramesh Venugopal, D. Jovanovic

In this paper, we present a computationally efficient, two-dimensional quantum mechanical sim- ulation scheme for modeling electron transport in thin body, fully depleted, n-channel, silicon- …

https://nanohub.org/resources/1835

Device Physics and Simulation of Silicon Nanowire Transistors

28 Sep 2006 | Publications | Contributor(s): Jing Wang

As the conventional silicon metal-oxide-semiconductor field-effect transistor (MOSFET) approaches its scaling limits, many novel device structures are being extensively explored. Among them, the …

https://nanohub.org/resources/1833

Nanoscale Device Modeling: From MOSFETs to Molecules

20 Sep 2006 | Publications | Contributor(s): Prashant Subhash Damle

This thesis presents a rigorous yet practical approach to model quantum transport in nanoscale electronic devices. As convetional metal oxide semiconductor devices shrink below the one hundred …

https://nanohub.org/resources/1816