Tags: NEGF

Description

The non-equilibrium Greens function (NEGF) formalism provides a powerful conceptual and computational framework for treating quantum transport in nanodevices. It goes beyond the Landauer approach for ballistic, non-interacting electronics to include inelastic scattering and strong correlation effects at an atomistic level.

Check out Supriyo Datta's NEGF page for more information, or browse through the various resources listed below.

Resources (81-100 of 157)

  1. Lecture 5A: Correlations and Entanglement

    20 Aug 2008 | | Contributor(s):: Supriyo Datta

    Objective: To relate the one-electron picture used throughout these lectures to the more general but less tractable many-particle picture that underlies it. We introduce this new viewpoint using the example of Coulomb blockaded electronic devices that are difficult to model within the picture...

  2. Lecture 5B: Correlations and Entanglement

    20 Aug 2008 | | Contributor(s):: Supriyo Datta

    Objective: To relate the one-electron picture used throughout these lectures to the more general but less tractable many-particle picture that underlies it. We introduce this new viewpoint using the example of Coulomb blockaded electronic devices that are difficult to model within the picture...

  3. Nanoelectronics and the Meaning of Resistance

    20 Aug 2008 | | Contributor(s):: Supriyo Datta

    The purpose of this series of lectures is to introduce the "bottom-up" approach to nanoelectronics using concrete examples. No prior knowledge of quantum mechanics or statistical mechanics is assumed; however, familiarity with matrix algebra will be helpful for some topics. Day 1: What...

  4. Matdcal

    30 Jan 2008 | | Contributor(s):: Kirk Bevan

    Non-equilibrium Green's Function Density Functional Theory Simulator

  5. Nanoelectronic Modeling: Multimillion Atom Simulations, Transport, and HPC Scaling to 23,000 Processors

    07 Mar 2008 | | Contributor(s):: Gerhard Klimeck

    Future field effect transistors will be on the same length scales as “esoteric” devices such as quantum dots, nanowires, ultra-scaled quantum wells, and resonant tunneling diodes. In those structures the behavior of carriers and their interaction with their environment need to be fundamentally...

  6. MCW07 Physics of Contact Induced Current Asymmetry in Transport Through Molecules

    25 Feb 2008 | | Contributor(s):: Bhaskaran Muralidharan, owen miller, Neeti Kapur, Avik Ghosh, Supriyo Datta

    We first outline the qualitatively different physics involved in the charging-induced current asymmetries in molecular conductors operating in the strongly coupled (weakly interacting) self-consistent field (SCF) and the weakly coupled (strongly interacting) Coulomb Blockade (CB) regimes. The CB...

  7. Exploring Physical and Chemical control of molecular conductance: A computational study

    31 Jan 2008 | | Contributor(s):: Barry D. Dunietz

  8. Application of the Keldysh Formalism to Quantum Device Modeling and Analysis

    14 Jan 2008 | | Contributor(s):: Roger Lake

    The effect of inelastic scattering on quantum electron transport through layered semi-conductor structures is studied numerically using the approach based on the non-equilibrium Green's function formalism of Keldysh, Kadanoff, and Baym. The Markov assumption is not made, and the energy...

  9. Electron-Phonon and Electron-Electron Interactions in Quantum Transport

    14 Jan 2008 | | Contributor(s):: Gerhard Klimeck

    The objective of this work is to shed light on electron transport through sub-micron semi-conductor structures, where electronic state quantization, electron-electron interactions and electron-phonon interactions are important. We concentrate here on the most developed vertical quantum device,...

  10. Can numerical “experiments” INSPIRE physical experiments?

    20 Dec 2007 | | Contributor(s):: Supriyo Datta

    This presentation was one of 13 presentations in the one-day forum, "Excellence in Computer Simulation," which brought together a broad set of experts to reflect on the future of computational science and engineering.

  11. Engineering at the nanometer scale: Is it a new material or a new device?

    06 Nov 2007 | | Contributor(s):: Gerhard Klimeck

    This seminar will overview NEMO 3D simulation capabilities and its deployment on the nanoHUB as well as an overview of the nanoHUB impact on the community.

  12. MCW07 Modeling Molecule-Assisted Transport in Nanotransistors

    06 Nov 2007 | | Contributor(s):: Kamil Walczak

    Molecular electronics faces many problems in practical device implementation, due to difficulties with fabrication and gate-ability. In these devices, molecules act as the main conducting channel. One could imagine alternate device structures where molecules act as quantum dots rather than...

  13. MCW07 Simple Models for Molecular Transport Junctions

    13 Sep 2007 | | Contributor(s):: , Abraham Nitzan, Mark Ratner

    We review our recent research on role of interactions in molecular transport junctions. We consider simple models within nonequilibrium Green function approach (NEGF) in steady-state regime.

  14. MCW07 Modeling Charging-based Switching in Molecular Transport Junctions

    23 Aug 2007 | | Contributor(s):: Sina Yeganeh, , Mark Ratner

    We will discuss several proposed explanations for the switching and negative differential resistance behavior seen in some molecular junctions. It is shown that a proposed polaron model is successful in predicting both hysteresis and NDR behavior, and the model is elaborated with image charge...

  15. Introduction to FETToy

    03 Jul 2007 | | Contributor(s):: James K Fodor, Jing Guo

    This learning module introduces nanoHUB users to the FETToy simulator. A brief introduction to FETToy is presented, followed by voiced presentations featuring the simulator in action. Upon completion of this module, users should be able to use this simulator to gain valuable insight into the...

  16. Introduction to nanoMOS

    02 Jul 2007 | | Contributor(s):: James K Fodor, Jing Guo

    This learning module introduces nanoHUB users to the nanoMOS simulator. A brief introduction to nanoMOS is presented, followed by voiced presentations featuring the simulator in action. Upon completion of this module, users should be able to use this simulator to gain valuable insight into the...

  17. Multi-gate Nanowire FET

    18 May 2007 | | Contributor(s):: Mincheol Shin

    3D simulator for silicon nanowire field effect transistors with multiple gates

  18. Atomistic Green's Function Method 1-D Atomic Chain Simulation

    16 Apr 2007 | | Contributor(s):: Zhen Huang, Wei Zhang, Timothy S Fisher, Sridhar Sadasivam

    Calculation of Thermal Conductance of an Atomic Chain

  19. BNC Annual Research Symposium: Nanoscale Energy Conversion

    23 Apr 2007 | | Contributor(s):: Timothy S Fisher

    This presentation is part of a collection of presentations describing the projects, people, and capabilities enhanced by research performed in the Birck Center, and a look at plans for the upcoming year.

  20. CNTFET Lab

    13 Mar 2006 | | Contributor(s):: Neophytos Neophytou, Shaikh S. Ahmed, POLIZZI ERIC, Gerhard Klimeck, Mark Lundstrom

    Simulates ballistic transport properties in 3D Carbon NanoTube Field Effect Transistor (CNTFET) devices