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Tags: NEGF

Description

The non-equilibrium Greens function (NEGF) formalism provides a powerful conceptual and computational framework for treating quantum transport in nanodevices. It goes beyond the Landauer approach for ballistic, non-interacting electronics to include inelastic scattering and strong correlation effects at an atomistic level.

Check out Supriyo Datta's NEGF page for more information, or browse through the various resources listed below.

Resources (1-20 of 147)

  1. Magnetic Tunnel Junction Lab

    23 Sep 2013 | Tools | Contributor(s): Samiran Ganguly, Deepanjan Datta, Chen Shang, Sankarsh Ramadas, Sayeef Salahuddin, Supriyo Datta

    Calculate Resistance, Tunneling Magneto Resistance, Spin Torques, and Switching characteristics of a Magnetic Tunnel Junction

    http://nanohub.org/resources/mtjlab

  2. Efficiency Enhancement for Nanoelectronic Transport Simulations

    02 Feb 2014 | Papers | Contributor(s): Jun Huang

    PhD thesis of Jun Huang Continual technology innovations make it possible to fabricate electronic devices on the order of 10nm. In this nanoscale regime, quantum physics becomes critically...

    http://nanohub.org/resources/20248

  3. MATLAB codes from "Nanoscale device modeling: the Green's function method"

    10 Oct 2013 | Downloads | Contributor(s): Supriyo Datta

    The MATLAB programs used to generate the figures in the article that appeared in Superlattices and Microstructures, vol.28, p.253 (2000).

    http://nanohub.org/resources/19564

  4. Physics and Simulation of Nanoscale Electronic and Thermoelectric Devices

    28 Jun 2013 | Papers | Contributor(s): raseong kim

    For the past few decades, transistors have been continuously scaled. Dimensions are now at the nanoscale, and device performance has dramatically improved. Nanotechnology is also achieving...

    http://nanohub.org/resources/18690

  5. Device Physics Studies of III-V and Silicon MOSFETS for Digital Logic

    28 Jun 2013 | Papers | Contributor(s): Himadri Pal

    III-V's are currently gaining a lot of attraction as possible MOSFET channel materials due to their high intrinsic mobility. Several challenges, however, need to be overcome before III-V's can...

    http://nanohub.org/resources/18697

  6. Quantum and Atomistic Effects in Nanoelectronic Transport Devices

    28 Jun 2013 | Papers | Contributor(s): Neophytos Neophytou

    As devices scale towards atomistic sizes, researches in silicon electronic device technology are investigating alternative structures and materials. As predicted by the International Roadmap for...

    http://nanohub.org/resources/18705

  7. Exploring New Channel Materials for Nanoscale CMOS

    28 Jun 2013 | Papers | Contributor(s): Anisur Rahman

    The improved transport properties of new channel materials, such as Ge and III-V semiconductors, along with new device designs, such as dual gate, tri gate or FinFETs, are expected to enhance the...

    http://nanohub.org/resources/18738

  8. Carbon Nanotube Electronics: Modeling, Physics, and Applications

    28 Jun 2013 | Papers | Contributor(s): Jing Guo

    In recent years, significant progress in understanding the physics of carbon nanotube electronic devices and in identifying potential applications has occurred. In a nanotube, low bias transport...

    http://nanohub.org/resources/18742

  9. Physics and Simulation of Quasi-Ballistic Transport in Nanoscale Transistors

    28 Jun 2013 | Papers | Contributor(s): Jung-Hoon Rhew

    The formidable progress in microelectronics in the last decade has pushed the channel length of MOSFETs into decanano scale and the speed of BJTs into hundreds of gigahertz. This progress imposes...

    http://nanohub.org/resources/18747

  10. Dissipative Quantum Transport in Semiconductor Nanostructures

    28 Dec 2011 | Papers | Contributor(s): Peter Greck

    In this work, we investigate dissipative quantum transport properties of an open system. After presenting the background of ballistic quantum transport calculations, a simple scattering mechanism,...

    http://nanohub.org/resources/12756

  11. Green's Functions Method Explained

    10 Aug 2011 | Teaching Materials | Contributor(s): Dragica Vasileska, Gerhard Klimeck

    This is a tutorial on non-equilibrium Green's functions.

    http://nanohub.org/resources/11825

  12. Tutorial 4: Far-From-Equilibrium Quantum Transport

    29 Mar 2011 | Courses | Contributor(s): Gerhard Klimeck

    These lectures focus on the application of the theories using the nanoelectronic modeling tools NEMO 1- D, NEMO 3-D, and OMEN to realistically extended devices. Topics to be covered are realistic...

    http://nanohub.org/resources/11042

  13. Tutorial 4a: High Bias Quantum Transport in Resonant Tunneling Diodes

    29 Mar 2011 | Online Presentations | Contributor(s): Gerhard Klimeck

    Outline: Resonant Tunneling Diodes - NEMO1D: Motivation / History / Key Insights Open 1D Systems: Transmission through Double Barrier Structures - Resonant Tunneling Introduction to RTDs:...

    http://nanohub.org/resources/11043

  14. FETToy

    14 Feb 2006 | Tools | Contributor(s): Anisur Rahman, Jing Wang, Jing Guo, Md. Sayed Hasan, Yang Liu, Akira Matsudaira, Shaikh S. Ahmed, Supriyo Datta, Mark Lundstrom

    Calculate the ballistic I-V characteristics for conventional MOSFETs, Nanowire MOSFETs and Carbon NanoTube MOSFETs

    http://nanohub.org/resources/fettoy

  15. OMEN Nanowire: solve the challenge

    05 Feb 2011 | Teaching Materials | Contributor(s): SungGeun Kim

    This document includes a challenging problems for OMEN Nanowire users. It challenges users to establish a nanowire transistor structure such that it satisfy the ITRS 2010 requirements.

    http://nanohub.org/resources/10764

  16. Electron Density in a Nanowire

    30 Jan 2011 | Animations | Contributor(s): Gerhard Klimeck, Saumitra Raj Mehrotra

    Electron Density in a circular Silicon nanowire transistor.

    http://nanohub.org/resources/10666

  17. OMEN Nanowire Homework Problems

    24 Jan 2011 | Teaching Materials | Contributor(s): SungGeun Kim

    OMEN Nanowire homework problems: anyone who has gone through the first-time user guide of OMEN Nanowire and done the examples in the guide should be able to run simulations in these homework...

    http://nanohub.org/resources/10512

  18. OMEN Nanowire Test Problems

    24 Jan 2011 | Teaching Materials | Contributor(s): SungGeun Kim

    This test is for students who have gone through the OMEN Nanowire first-time user guide and other learning materials related to nanowire FETs.

    http://nanohub.org/resources/10515

  19. Inelastic Scattering in NEGF: Matlab Implementation and Exercises

    02 Jan 2011 | Downloads | Contributor(s): Samiran Ganguly, Supriyo Datta

    A set of Matlab scripts has been developed illustrating the treatment of inelastic scattering in non-equilibrium Greens function (NEGF) based quantum transport models. The first script highlights...

    http://nanohub.org/resources/10262

  20. Lecture 3: Introduction to NEGF

    08 Sep 2010 | Online Presentations | Contributor(s): Supriyo Datta

    “Electronics from the Bottom Up” is an educational initiative designed to bring a new perspective to the field of nano device engineering. It is co-sponsored by the Intel Foundation and the...

    http://nanohub.org/resources/9659

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