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The non-equilibrium Greens function (NEGF) formalism provides a powerful conceptual and computational framework for treating quantum transport in nanodevices. It goes beyond the Landauer approach for ballistic, non-interacting electronics to include inelastic scattering and strong correlation effects at an atomistic level.
Check out Supriyo Datta's NEGF page for more information, or browse through the various resources listed below.
Highly Efficient Thermal Transport: The Application of Carbon Nanotube Array Interfaces
4.0 out of 5 stars
01 Feb 2007 | Online Presentations | Contributor(s): Baratunde A. Cola
Carbon nanotubes (CNTs) have received much attention in recent years for their extraordinary properties that through careful engineering may be leverage for the development of numerous...
McCoy Lecture: Nanodevices and Maxwell's Demon
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08 Dec 2006 | Online Presentations | Contributor(s): Supriyo Datta
This is a video taped live lecture covering roughly the same material as lecture 1 of "Concepts of Quantum Transport". Video only.
CQT Lecture 4: Coulomb blockade and Fock space
5.0 out of 5 stars
To illustrate the limitations of the model
described in Lectures 2, 3 and introduce a completely different approach based on
the concept of Fock space.
I believe this will be a...
CQT Lecture 3: Probabilities, Wavefunctions and Green Functions
Objective: To extend the simple model from Lecture 2
into the full-blown model combines the NEGF (Non-Equilibrium
Green Function) method with the Landauer approach.
CQT Lecture 2: Electrical Resistance - A Simple Model
To introduce a simple quantitative
model for describing current flow in nanoscalestructures and relate it to
well-known large scale properties like Ohm’s Law.
CQT Lecture 1: Nanodevices and Maxwell's Demon
Objective: To illustrate the subtle interplay of
dynamics and thermodynamicsthat distinguishes transport physics.
A short overview of this series of four lectures is given.
CQT: Concepts of Quantum Transport
08 Dec 2006 | Courses | Contributor(s): Supriyo Datta
Note: For an expanded version of these lectures see Datta's 2008 NCN@Purdue Summer School presentations on
Nanoelectronics and the Meaning of Resistance.
How does the resistance of a...
MOSCNT: code for carbon nanotube transistor simulation
3.5 out of 5 stars
15 Nov 2006 | Downloads | Contributor(s): Siyu Koswatta, Jing Guo, Dmitri Nikonov
Ballistic transport in carbon nanotube metal-oxide-semiconductor field-effect transistors (CNT-MOSFETs) is simulated using the Non-equilibrium Green’s function formalism. A cylindrical...
recursive algorithm for NEGF in Matlab
13 Nov 2006 | Downloads | Contributor(s): Dmitri Nikonov, Siyu Koswatta
This zip-archive contains two Matlab functions for the recursive solution of the partial matrix inversion and partial 3-matrix multiplication used in the non-equilibrium Green’s function (NEGF)...
Multidimensional nanoscale device modeling: the finite element method applied to the non-equilibrium Green's function formalism
31 Oct 2006 | Papers | Contributor(s): Eric Polizzi, Supriyo Datta
This work deals with the modeling and the numerical simulation of quantum transport in multidimensional open nanoscale devices. The electron transport in the device is described using the...
Non Equilibrium Green's Functions for Dummies: Introduction to the One Particle NEGF equations
30 Oct 2006 | Papers | Contributor(s): Magnus Paulsson
Non equilibrium Green's function methods are regularly used to calculate current and charge densities in nanoscale (both molecular and semiconductor) conductors under bias. This method is mainly...
Modeling Quantum Transport in Nanoscale Transistors
30 Oct 2006 | Papers | Contributor(s): Ramesh Venugopal
As critical transistor dimensions scale below the 100 nm (nanoscale) regime, quan-
tum mechanical effects begin to manifest themselves and affect important device
Carbon Nanotube Electronics: Modeling, Physics, and Applications
30 Oct 2006 | Papers | Contributor(s): Jing Guo
In recent years, significant progress in understanding the physics of carbon nanotube
electronic devices and in identifying potential applications has occurred. In a nanotube,
A Three-Dimensional Quantum Simulation of Silicon Nanowire Transistors with the Effective-Mass Approximation
30 Oct 2006 | Papers | Contributor(s): Jing Wang, Eric Polizzi, Mark Lundstrom
The silicon nanowire transistor (SNWT) is a promising device structure for future
integrated circuits, and simulations will be important for understanding its device physics and
Electrical Resistance: an Atomistic View
26 Oct 2006 | Papers | Contributor(s): Supriyo Datta
This tutorial article presents a “bottom-up” view of electrical resistance starting
from something really small, like a molecule, and then discussing the issues that
arise as we move to...
Nanoscale MOSFETs: Physics, Simulation and Design
26 Oct 2006 | Papers | Contributor(s): Zhibin Ren
This thesis discusses device physics, modeling and design issues of nanoscale
transistors at the quantum level. The principle topics addressed in this report are 1) an
Modeling of Nanoscale Devices
19 Oct 2006 | Papers | Contributor(s): M. P. Anantram, Mark Lundstrom, Dmitri Nikonov
We aim to provide engineers with an introduction
to the nonequilibriumGreen’s function (NEGF) approach, which is a powerful conceptual tool and a practical analysismethod to treat nanoscale...
A Quantum Mechanical Analysis of Channel Access Geometry and Series Resistance in Nanoscale Transistors
19 Oct 2006 | Papers | Contributor(s): Ramesh Venugopal, Sebastien Goasguen, Supriyo Datta, Mark Lundstrom
In this paper, we apply a two-dimensional quantum mechanical simulation scheme to study
the effect of channel access geometries on device performance. This simulation scheme solves the...
Introduction to the Keldysh Nonequilibrium Green Function Technique
06 Oct 2006 | Papers | Contributor(s): A. P. Jauho
Keldysh nonequilibrium Green function technique is used very widely to describe transport phenomena in mesoscopic systems.
The technique is somewhat subtle, and a rigorous treatment would require...