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The non-equilibrium Greens function (NEGF) formalism provides a powerful conceptual and computational framework for treating quantum transport in nanodevices. It goes beyond the Landauer approach for ballistic, non-interacting electronics to include inelastic scattering and strong correlation effects at an atomistic level.
Check out Supriyo Datta's NEGF page for more information, or browse through the various resources listed below.
Highly Efficient Thermal Transport: The Application of Carbon Nanotube Array Interfaces
out of 5 stars
01 Feb 2007 | | Contributor(s):: Baratunde A. Cola
Carbon nanotubes (CNTs) have received much attention in recent years for their extraordinary properties that through careful engineering may be leverage for the development of numerous advantageous applications. However, to date, only few CNT based applications exist in the market place. So when...
McCoy Lecture: Nanodevices and Maxwell's Demon
04 Oct 2006 | | Contributor(s):: Supriyo Datta
This is a video taped live lecture covering roughly the same material as lecture 1 of "Concepts of Quantum Transport". Video only.
CQT Lecture 4: Coulomb blockade and Fock space
30 Nov 2006 | | Contributor(s):: Supriyo Datta
Objective: To illustrate the limitations of the model described in Lectures 2, 3 and introduce a completely different approach based on the concept of Fock space. I believe this will be a key concept in the next stage of development of transport physics.
CQT Lecture 3: Probabilities, Wavefunctions and Green Functions
Objective: To extend the simple model from Lecture 2 into the full-blown model combines the NEGF (Non-Equilibrium Green Function) method with the Landauer approach.
CQT Lecture 2: Electrical Resistance - A Simple Model
Objective:To introduce a simple quantitative model for describing current flow in nanoscalestructures and relate it to well-known large scale properties like Ohm’s Law.
CQT Lecture 1: Nanodevices and Maxwell's Demon
Objective: To illustrate the subtle interplay of dynamics and thermodynamicsthat distinguishes transport physics.
A short overview of this series of four lectures is given.
CQT: Concepts of Quantum Transport
Note: For an expanded version of these lectures see Datta's 2008 NCN@Purdue Summer School presentations on Nanoelectronics and the Meaning of Resistance. How does the resistance of a conductor change as we shrink its length all the way down to a few atoms? This is a question that...
MOSCNT: code for carbon nanotube transistor simulation
14 Nov 2006 | | Contributor(s):: Siyu Koswatta, Jing Guo, Dmitri Nikonov
Ballistic transport in carbon nanotube metal-oxide-semiconductor field-effect transistors (CNT-MOSFETs) is simulated using the Non-equilibrium Green’s function formalism. A cylindrical transistor geometry with wrapped-around gate and doped source/drain regions are assumed. It should be noted...
recursive algorithm for NEGF in Matlab
13 Nov 2006 | | Contributor(s):: Dmitri Nikonov, Siyu Koswatta
This zip-archive contains two Matlab functions for the recursive solution of the partial matrix inversion and partial 3-matrix multiplication used in the non-equilibrium Green’s function (NEGF) method.recuresealg3d.m- works for 3-diagonal matricesrecuresealgblock3d.m- works for 3-block-diagonal...
Multidimensional nanoscale device modeling: the finite element method applied to the non-equilibrium Green's function formalism
31 Oct 2006 | | Contributor(s):: POLIZZI ERIC, Supriyo Datta
This work deals with the modeling and the numerical simulation of quantum transport in multidimensional open nanoscale devices. The electron transport in the device is described using the Non-Equilibrium Green's Functions (NEGF) formalism and the variational form of the problem is solved using...
Non Equilibrium Green's Functions for Dummies: Introduction to the One Particle NEGF equations
30 Oct 2006 | | Contributor(s):: Magnus Paulsson
Non equilibrium Green's function methods are regularly used to calculate current and charge densities in nanoscale (both molecular and semiconductor) conductors under bias. This method is mainly used for ballistic conduction but may be extended to include inelastic scattering. In this tutorial...
Modeling Quantum Transport in Nanoscale Transistors
30 Oct 2006 | | Contributor(s):: ramesh venugopal
As critical transistor dimensions scale below the 100 nm (nanoscale) regime, quan- tum mechanical effects begin to manifest themselves and affect important device performance metrics. Therefore, simulation tools which can be applied to design nanoscale transistors in the future, require new...
Carbon Nanotube Electronics: Modeling, Physics, and Applications
30 Oct 2006 | | Contributor(s):: Jing Guo
In recent years, significant progress in understanding the physics of carbon nanotube electronic devices and in identifying potential applications has occurred. In a nanotube, low bias transport can be nearly ballistic across distances of several hundred nanometers. Deposition of high-κ gate...
A Three-Dimensional Quantum Simulation of Silicon Nanowire Transistors with the Effective-Mass Approximation
30 Oct 2006 | | Contributor(s):: , POLIZZI ERIC, Mark Lundstrom
The silicon nanowire transistor (SNWT) is a promising device structure for future integrated circuits, and simulations will be important for understanding its device physics and assessing its ultimate performance limits. In this work, we present a three-dimensional quantum mechanical simulation...
Electrical Resistance: an Atomistic View
26 Oct 2006 | | Contributor(s):: Supriyo Datta
This tutorial article presents a “bottom-up” view of electrical resistance starting from something really small, like a molecule, and then discussing the issues that arise as we move to bigger conductors. Remark ably enough, no serious quantum mechanics is needed to understand electrical...
Nanoscale MOSFETs: Physics, Simulation and Design
26 Oct 2006 |
This thesis discusses device physics, modeling and design issues of nanoscale transistors at the quantum level. The principle topics addressed in this report are 1) an implementation of appropriate physics and methodology in device modeling, 2) development of a new TCAD (technology computer...
Modeling of Nanoscale Devices
19 Oct 2006 | | Contributor(s):: M. P. Anantram, Mark Lundstrom, Dmitri Nikonov
We aim to provide engineers with an introductionto the nonequilibriumGreen’s function (NEGF) approach, which is a powerful conceptual tool and a practical analysismethod to treat nanoscale electronic devices with quantum mechanicaland atomistic effects. We first review the basis for the...
A Quantum Mechanical Analysis of Channel Access Geometry and Series Resistance in Nanoscale Transistors
19 Oct 2006 | | Contributor(s):: Ramesh Venugopal, Sebastien Goasguen, Supriyo Datta, Mark Lundstrom
In this paper, we apply a two-dimensional quantum mechanical simulation scheme to study the effect of channel access geometries on device performance. This simulation scheme solves the non-equilibrium Green’s function equations self-consistently with Poisson’s equation and treats the effect of...
Introduction to the Keldysh Nonequilibrium Green Function Technique
06 Oct 2006 |
Keldysh nonequilibrium Green function technique is used very widely to describe transport phenomena in mesoscopic systems.The technique is somewhat subtle, and a rigorous treatment would require much more than we have at our disposal, see, for example, the text-bookk by Haug and Jauho .The...