Find information on common issues.
Ask questions and find answers from other users.
Suggest a new site feature or improvement.
Check on status of your tickets.
The non-equilibrium Greens function (NEGF) formalism provides a powerful conceptual and computational framework for treating quantum transport in nanodevices. It goes beyond the Landauer approach for ballistic, non-interacting electronics to include inelastic scattering and strong correlation effects at an atomistic level.
Check out Supriyo Datta's NEGF page for more information, or browse through the various resources listed below.
Dissipative Quantum Transport in Semiconductor Nanostructures
28 Dec 2011 | | Contributor(s):: Peter Greck
In this work, we investigate dissipative quantum transport properties of an open system. After presenting the background of ballistic quantum transport calculations, a simple scattering mechanism, called Büttiker Probes, is introduced. Then, we assess the properties of the Büttiker Probe model...
Green's Functions Method Explained
10 Aug 2011 | | Contributor(s):: Dragica Vasileska, Gerhard Klimeck
This is a tutorial on non-equilibrium Green's functions.
Tutorial 4: Far-From-Equilibrium Quantum Transport
29 Mar 2011 | | Contributor(s):: Gerhard Klimeck
These lectures focus on the application of the theories using the nanoelectronic modeling tools NEMO 1- D, NEMO 3-D, and OMEN to realistically extended devices. Topics to be covered are realistic resonant tunneling diodes, quantum dots, nanowires, and Ultra-Thin-Body Transistors.
Tutorial 4a: High Bias Quantum Transport in Resonant Tunneling Diodes
Outline:Resonant Tunneling Diodes - NEMO1D: Motivation / History / Key InsightsOpen 1D Systems: Transmission through Double Barrier Structures - Resonant TunnelingIntroduction to RTDs: Linear Potential DropIntroduction to RTDs: Realistic Doping ProfilesIntroduction to RTDs: Relaxation Scattering...
14 Feb 2006 | | Contributor(s):: Anisur Rahman, Jing Wang, Jing Guo, Md. Sayed Hasan, Yang Liu, Akira Matsudaira, Shaikh S. Ahmed, Supriyo Datta, Mark Lundstrom
Calculate the ballistic I-V characteristics for conventional MOSFETs, Nanowire MOSFETs and Carbon NanoTube MOSFETs
OMEN Nanowire: solve the challenge
05 Feb 2011 | | Contributor(s):: SungGeun Kim
This document includes a challenging problems for OMEN Nanowire users. It challenges users to establish a nanowire transistor structure such that it satisfy the ITRS 2010 requirements.
Electron Density in a Nanowire
30 Jan 2011 | | Contributor(s):: Gerhard Klimeck, Saumitra Raj Mehrotra
Electron Density in a circular Silicon nanowire transistor.
OMEN Nanowire Homework Problems
23 Jan 2011 | | Contributor(s):: SungGeun Kim
OMEN Nanowire homework problems: anyone who has gone through the first-time user guide of OMEN Nanowire and done the examples in the guide should be able to run simulations in these homework problems and find the answers to them.
OMEN Nanowire Test Problems
24 Jan 2011 | | Contributor(s):: SungGeun Kim
This test is for students who have gone through the OMEN Nanowire first-time user guide and other learning materials related to nanowire FETs.
Inelastic Scattering in NEGF: Matlab Implementation and Exercises
31 Dec 2010 | | Contributor(s):: Samiran Ganguly, Supriyo Datta
A set of Matlab scripts has been developed illustrating the treatment of inelastic scattering in non-equilibrium Greens function (NEGF) based quantum transport models. The first script highlights the core principles using a simple conductor described by a (2x2) Hamiltonian matrix, while the...
Lecture 3: Introduction to NEGF
08 Sep 2010 | | Contributor(s):: Supriyo Datta
Surface scattering: Made simple
03 Sep 2010 | | Contributor(s):: Dmitri Nikonov, Himadri Pal
Surface scattering in a quantum well.
ANGEL - A Nonequilibrium Green Function Solver for LEDs
18 Jan 2010 | | Contributor(s):: sebastian steiger
An MPI-parallelized implementation of 1-D NEGF for heterostructures. Includes off-diagonal scattering. Effective mass band structure for electrons and holes. The online tool only provides basic NEGF functionality without scattering.
Resonant Tunneling Diode operation
09 Apr 2010 | | Contributor(s):: Saumitra Raj Mehrotra, Gerhard Klimeck
A resonant tunneling diode (RTD) is a type of diode with a resonant tunneling structure that allows electrons to tunnel through various resonant states at certain energy levels. RTDs can be fabricated using many different types of materials (such as III-V, type IV, II-VI semiconductors) and...
Nanotechnology Animation Gallery
20 Apr 2010 | | Contributor(s):: Saumitra Raj Mehrotra, Gerhard Klimeck
Animations and visualization are generated with various nanoHUB.org tools to enable insight into nanotechnology and nanoscience. Click on image for detailed description and larger image download. Additional animations are also available Featured nanoHUB tools: Band Structure Lab. Carrier...
Nonequilibrium Green’s functions theory: Transport and optical gain in THz quantum cascade lasers
24 Mar 2010 | | Contributor(s):: Tillmann Christoph Kubis
Quantum cascade lasers (QCLs) are promising sources of coherent THz radiation. However, state of the art THz-QCLs are still limited to cryogenic temperatures. The charge transport in these QCLs is subject to coherent quantum phenomena, such as quantum tunneling, confinement and interferences as...
Nanoelectronic Modeling nanoHUB Demo 2: RTD simulation with NEGF
01 Feb 2010 | | Contributor(s):: Gerhard Klimeck
Demonstration of resonant tunneling diode (RTD) simulation using the RTD Simulation with NEGF Tool with a Hartree potential model showing potential profile, charge densities, current-voltage characteristics, and resonance energies. Also demonstrated is a RTD simulation using a Thomas-Fermi...
Nanoelectronic Modeling nanoHUB Demo 1: nanoHUB Tool Usage with RTD Simulation with NEGF
Demonstration of running tools on the nanoHUB. Demonstrated is the RTD Simulation with NEGF Tool using a simple level-drop potential model and a more realistic device using a Thomas-Fermi potential model.
Nanoelectronic Modeling Lecture 26: NEMO1D -
02 Mar 2010 | | Contributor(s):: Gerhard Klimeck
NEMO1D demonstrated the first industrial strength implementation of NEGF into a simulator that quantitatively simulated resonant tunneling diodes. The development of efficient algorithms that simulate scattering from polar optical phonons, acoustic phonons, alloy disorder, and interface...
Quantum transport in semiconductor nanostructures
03 Mar 2010 | | Contributor(s):: Tillmann Christoph Kubis
PhD thesis of Tillmann Christoph KubisThe main objective of this thesis is to theoretically predict the stationary charge and spin transport in mesoscopic semiconductor quantum devices in the presence of phonons and device imperfections. It is well known that the nonequilibrium Green's function...