Tags: NEGF

Description

The non-equilibrium Greens function (NEGF) formalism provides a powerful conceptual and computational framework for treating quantum transport in nanodevices. It goes beyond the Landauer approach for ballistic, non-interacting electronics to include inelastic scattering and strong correlation effects at an atomistic level.

Check out Supriyo Datta's NEGF page for more information, or browse through the various resources listed below.

Resources (81-100 of 174)

  1. ECE 659 Lecture 18: NEGF Equations

    03 Mar 2009 | | Contributor(s):: Supriyo Datta

  2. Thermoelectric Power Factor Calculator for Superlattices

    18 Oct 2008 | | Contributor(s):: Terence Musho, Greg Walker

    Quantum Simulation of the Seebeck Coefficient and Electrical Conductivity in 1D Superlattice Structures using Non-Equilibrium Green's Functions

  3. OMEN Nanowire

    02 Sep 2008 | | Contributor(s):: SungGeun Kim, Mathieu Luisier, Benjamin P Haley, Abhijeet Paul, Saumitra Raj Mehrotra, Gerhard Klimeck, Hesameddin Ilatikhameneh

    Full-band 3D quantum transport simulation in nanowire structure

  4. ECE 495N Lecture 34: NEGF Continued I

    10 Dec 2008 | | Contributor(s):: Supriyo Datta

  5. ECE 495N Lecture 35: NEGF Continued II

    10 Dec 2008 | | Contributor(s):: Supriyo Datta

  6. ECE 495N Lecture 33: Non-Equilibrium Green's Function (NEGF) Method

    04 Dec 2008 | | Contributor(s):: Supriyo Datta

  7. NanoTCAD ViDES

    24 Jul 2008 | | Contributor(s):: Gianluca Fiori, Giuseppe Iannaccone

    3D Poisson/NEGF solver for the simulation of Graphene Nanoribbon, Carbon nanotubes and Silicon Nanowire Transistors.

  8. Quantum and Thermal Effects in Nanoscale Devices

    18 Sep 2008 | | Contributor(s):: Dragica Vasileska

    To investigate lattice heating within a Monte Carlo device simulation framework, we simultaneously solve the Boltzmann transport equation for the electrons, the 2D Poisson equation to get the self-consistent fields and the hydrodynamic equations for acoustic and optical phonons. The phonon...

  9. Resonant Tunneling Diode Simulation with NEGF

    18 Aug 2008 | | Contributor(s):: Hong-Hyun Park, Zhengping Jiang, Arun Goud Akkala, Sebastian Steiger, Michael Povolotskyi, Tillmann Christoph Kubis, Jean Michel D Sellier, Yaohua Tan, SungGeun Kim, Mathieu Luisier, Samarth Agarwal, Michael McLennan, Gerhard Klimeck, Junzhe Geng

    Simulate 1D RTDs using NEGF.

  10. Nanoelectronics and the meaning of resistance: Course Handout and Exercises

    02 Sep 2008 | | Contributor(s):: Supriyo Datta

    Handout with reference list, MATLAB scripts and exercise problems.

  11. Lecture 4A: Energy Exchange and Maxwell's Demon

    02 Sep 2008 | | Contributor(s):: Supriyo Datta

    Objective: To incorporate distributed energy exchange processes into the previous models from lectures 1 through 3 which are based on a "Landauer-like picture" where the Joule heating associated with current flow occurs entirely in the two contacts.Although there is experimental evidence that...

  12. Introduction: Nanoelectronics and the meaning of resistance

    20 Aug 2008 | | Contributor(s):: Supriyo Datta

    This lecture provides a brief overview of the five-day short course whose purpose is to introduce a unified viewpoint for a wide variety of nanoscale electronic devices of great interest for all kinds of applications including switching, energy conversion and sensing. Our objective, however, is...

  13. Lecture 2A: Quantum Transport

    20 Aug 2008 | | Contributor(s):: Supriyo Datta

    Objective: To extend the simple model from Lectures 1 into the full-fledged Non-equilibrium Green’s Function (NEGF) – Landauer model by introducing a spatial grid of N points and turning numbers like into (NxN) matrices like , with incoherent scattering introduced through . This model will be...

  14. Lecture 2B: Quantum Transport

    20 Aug 2008 | | Contributor(s):: Supriyo Datta

    Objective: To extend the simple model from Lectures 1 into the full-fledged Non-equilibrium Green’s Function (NEGF) – Landauer model by introducing a spatial grid of N points and turning numbers like into (NxN) matrices like , with incoherent scattering introduced through . This model will be...

  15. Lecture 3A: Spin Transport

    20 Aug 2008 | | Contributor(s):: Supriyo Datta

    Objective: To extend the model from Lectures 1 and 2 to include electron spin. Every electron is an elementary “magnet” with two states having opposite magnetic moments. Usually this has no major effect on device operation except to increase the conductance by a factor of two.But it is now...

  16. Lecture 3B: Spin Transport

    20 Aug 2008 | | Contributor(s):: Supriyo Datta

    Objective: To extend the model from Lectures 1 and 2 to include electron spin. Every electron is an elementary “magnet” with two states having opposite magnetic moments. Usually this has no major effect on device operation except to increase the conductance by a factor of two.But it is now...

  17. Lecture 4B: Energy Exchange and Maxwell’s Demon

    20 Aug 2008 | | Contributor(s):: Supriyo Datta

    Objective: To incorporate distributed energy exchange processes into the previous models from lectures 1 through 3 which are based on a “Landauer-like picture” where the Joule heating associated with current flow occurs entirely in the two contacts.Although there is experimental evidence that...

  18. Lecture 5A: Correlations and Entanglement

    20 Aug 2008 | | Contributor(s):: Supriyo Datta

    Objective: To relate the one-electron picture used throughout these lectures to the more general but less tractable many-particle picture that underlies it. We introduce this new viewpoint using the example of Coulomb blockaded electronic devices that are difficult to model within the picture...

  19. Lecture 5B: Correlations and Entanglement

    20 Aug 2008 | | Contributor(s):: Supriyo Datta

    Objective: To relate the one-electron picture used throughout these lectures to the more general but less tractable many-particle picture that underlies it. We introduce this new viewpoint using the example of Coulomb blockaded electronic devices that are difficult to model within the picture...

  20. Nanoelectronics and the Meaning of Resistance

    20 Aug 2008 | | Contributor(s):: Supriyo Datta

    The purpose of this series of lectures is to introduce the "bottom-up" approach to nanoelectronics using concrete examples. No prior knowledge of quantum mechanics or statistical mechanics is assumed; however, familiarity with matrix algebra will be helpful for some topics. Day 1: What...