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The non-equilibrium Greens function (NEGF) formalism provides a powerful conceptual and computational framework for treating quantum transport in nanodevices. It goes beyond the Landauer approach for ballistic, non-interacting electronics to include inelastic scattering and strong correlation effects at an atomistic level.
Check out Supriyo Datta's NEGF page for more information, or browse through the various resources listed below.
ECET 499N Lecture 5a: Nanoelectronics III - Datta Lecture Review
19 Feb 2010 | | Contributor(s):: Helen McNally
Nanoelectronic Modeling Lecture 22: NEMO1D - Motivation, History and Key Insights
07 Feb 2010 | | Contributor(s):: Gerhard Klimeck
The primary objective of the NEMO-1D tool was the quantitative modeling of high performance Resonant Tunneling Diodes (RTDs). The software tool was intended for Engineers (concepts, fast turn-around, interactive) and Scientists (detailed device anaysis). Therefore various degrees of...
Nanoelectronic Modeling Lecture 21: Recursive Green Function Algorithm
The Recursive Green Function (RGF) algorithms is the primary workhorse for the numerical solution of NEGF equations in quasi-1D systems. It is particularly efficient in cases where the device is partitioned into reservoirs which may be characterized by a non-Hermitian Hamiltonian and a central...
ANGEL - A Nonequilibrium Green's Function Solver for LEDs
07 Feb 2010 | | Contributor(s):: sebastian steiger
Introducing ANGEL, a Nonequilibrium Green’s Function code aimed at describing LEDs.ANGEL uses a description close to the classic NEMO-1D paper (Lake et al., JAP 81, 7845 (1997)) to model quantum transport in a light-emitting diode (LED).ANGEL is the first 1D-heterostructure NEGF to include the...
ECE 495N: Fundamentals of Nanoelectronics Lecture Notes (Fall 2009)
04 Feb 2010 | | Contributor(s):: Mehdi Salmani Jelodar, Supriyo Datta (editor)
Lecture notes for the Fall 2009 teaching of ECE 495: Fundamentals of Nanoelectronics.
Nanoelectronic Modeling Lecture 20: NEGF in a Quasi-1D Formulation
27 Jan 2010 | | Contributor(s):: Gerhard Klimeck, Samarth Agarwal, Zhengping Jiang
This lecture will introduce a spatial discretization scheme of the Schrödinger equation which represents a 1D heterostructure like a resonant tunneling diode with spatially varying band edges and effective masses.
Nanoelectronic Modeling Lecture 19: Introduction to RTDs - Asymmetric Structures
27 Jan 2010 | | Contributor(s):: Gerhard Klimeck
This lecture explores this effect in more detail by targeting an RTD that has a deliberate asymmetric structure. The collector barrier is chosen thicker than the emitter barrier. With this set-up we expect that the tunneling rate into the RTD from the emitter is faster than the tunneling rate...
Nanoelectronic Modeling Lecture 17: Introduction to RTDs - Relaxation Scattering in the Emitter
Realistic RTDs will have nonlinear electrostatic potential in their emitter. Typically a triangular well is formed in the emitter due to the applied bias and the emitter thus contains discrete quasi bound states.
Nanoelectronic Modeling: From Quantum Mechanics and Atoms to Realistic Devices
25 Jan 2010 | | Contributor(s):: Gerhard Klimeck
The goal of this series of lectures is to explain the critical concepts in the understanding of the state-of-the-art modeling of nanoelectronic devices such as resonant tunneling diodes, quantum wells, quantum dots, nanowires, and ultra-scaled transistors. Three fundamental concepts critical to...
Scattering in NEGF: Made simple
09 Nov 2009 | | Contributor(s):: Dmitri Nikonov, Himadri Pal, George Bourianoff
Formalism for describing electron-phonon scattering, surface scattering, and spin relaxation is dervied for the Keldysh non-equilibrium Green's functions (NEGF) method. Approximation useful for efficient numerical solution are described. The specific case of the nanoMOS simulator is...
2009 NCN@Purdue Summer School: Electronics from the Bottom Up
22 Sep 2009 | | Contributor(s):: Supriyo Datta, Mark Lundstrom, Muhammad A. Alam, Joerg Appenzeller
The school will consist of two lectures in the morning on the Nanostructured Electronic Devices: Percolation and Reliability and an afternoon lecture on Graphene Physics and Devices. A hands on laboratory session will be available in the afternoons.
Low Bias Transport in Graphene: An Introduction (lecture notes)
22 Sep 2009 | | Contributor(s):: Mark Lundstrom, tony low, Dionisis Berdebes
These notes complement a lecture with the same title presented by Mark Lundstrom and Dionisis Berdebes, at the NCN@Purdue Summer School, July 20-24, 2009.
Colloquium on Graphene Physics and Devices
22 Sep 2009 | | Contributor(s):: Joerg Appenzeller, Supriyo Datta, Mark Lundstrom
This short course introduces students to graphene as a fascinating research topic as well as to develop their skill in problem solving using the tools and techniques of electronics from the bottom up.
Lecture 2: Graphene Fundamentals
22 Sep 2009 | | Contributor(s):: Supriyo Datta
Lecture 6: Graphene PN Junctions
22 Sep 2009 | | Contributor(s):: Mark Lundstrom
Outline:IntroductionElectron optics in grapheneTransmission across NP junctionsConductance of PN and NN junctionsDiscussionSummary
Lecture 3: Low Bias Transport in Graphene: An Introduction
18 Sep 2009 | | Contributor(s):: Mark Lundstrom
Outline:Introduction and ObjectivesTheoryExperimental approachResultsDiscussionSummaryLecture notes are available for this lecture.
From Semi-Classical to Quantum Transport Modeling: Quantum Transport - Usuki Method and Theoretical Description of Green's Functions
10 Aug 2009 | | Contributor(s):: Dragica Vasileska
This set of powerpoint slides series provides insight on what are the tools available for modeling devices that behave either classically or quantum-mechanically. An in-depth description is provided to the approaches with emphasis on the advantages and disadvantages of each approach. Conclusions...
From Semi-Classical to Quantum Transport Modeling
RTD with NEGF Demonstration: Basic RTD Asymmetric
12 Jun 2009 | | Contributor(s):: Gerhard Klimeck
This video shows the analysis of a 2 barrier Resonant Tunneling Diode (RTD) over 21 bias points using RTDLab. Several powerful features of this tool are demonstrated.
OMEN Nanowire Demonstration: Nanowire Simulation and Analysis
11 Jun 2009 | | Contributor(s):: Gerhard Klimeck, Benjamin P Haley
This video shows the simulation and analysis of a nanowire using OMEN Nanowire. Several powerful analytic features of this tool are demonstrated.