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The non-equilibrium Greens function (NEGF) formalism provides a powerful conceptual and computational framework for treating quantum transport in nanodevices. It goes beyond the Landauer approach for ballistic, non-interacting electronics to include inelastic scattering and strong correlation effects at an atomistic level.
Check out Supriyo Datta's NEGF page for more information, or browse through the various resources listed below.
NEMO5, a Parallel, Multiscale, Multiphysics Nanoelectronics Modeling Tool
: From Basic Physics to Real Devices and to Global Impact on nanoHUB.org
10 Nov 2016 | | Contributor(s):: Gerhard Klimeck
The Nanoelectronic Modeling tool suite NEMO5 is aimed to comprehend the critical multi-scale, multi-physics phenomena and deliver results to engineers, scientists, and students through efficient computational approaches. NEMO5’s general software framework easily includes any kind of...
NEMO5, a Parallel, Multiscale, Multiphysics Nanoelectronics Modeling Tool
19 Sep 2016 | | Contributor(s):: Gerhard Klimeck
Atomistic Modeling of Nano Devices: From Qubits to Transistors
13 Apr 2016 | | Contributor(s):: Rajib Rahman
In this talk, I will describe such a framework that can capture complex interactions ranging from exchange and spin-orbit-valley coupling in spin qubits to non-equilibrium charge transport in tunneling transistors. I will show how atomistic full configuration interaction calculations of exchange...
Self-energies: Opening Doors for Nanotechnology
07 Apr 2016 | | Contributor(s):: Tillmann Christoph Kubis
In this talk, it will be shown how the concept of self-energies can be used to interface all these fields into the same nanotechnology modeling framework. Self-energies are most commonly used in the quantum transport method of nonequilibrium Green’s functions (NEGF). The NEGF method is...
MATLAB codes from the "Lessons from Nanoelectronics"
10 Dec 2015 | | Contributor(s):: Supriyo Datta
The .zip archive contains all the codes from the book.You can download and unzip the file to access the codes organized in folders (titled by the Lecture number).You can run this on MATLAB or use the OCTAViEw tool on nanoHUB.
Phonon Interactions in Single-Dopant-Based Transistors: Temperature and Size Dependence
25 Nov 2015 | | Contributor(s):: Marc Bescond, Nicolas Cavassilas, Salim Berrada
IWCE 2015 presentation. in this work we investigate the dependence of electron-phonon scattering in single dopant-based nanowire transistor with respect to temperature and dimensions. we use a 3d real-space non-equilibrium green': ; s function (negf) approach where electron-phonon...
Mode Space Tight Binding Model for Ultra-Fast Simulations of III-V Nanowire MOSFETs and Heterojunction TFETs
13 Nov 2015 | | Contributor(s):: Aryan Afzalian, Jun Huang, Hesameddin Ilatikhameneh, Santiago Alonso Perez Rubiano, Tillmann Christoph Kubis, Michael Povolotskyi, Gerhard Klimeck
IWCE 2015 presentation. we explore here the suitability of a mode space tight binding algorithm to various iii-v homo- and heterojunction nanowire devices. we show that in iii-v materials, the number of unphysical modes to eliminate is very high compared to the si case previously reported...
Density Functional Tight Binding (DFTB) Modeling in the Context of Ultra-Thin Silicon-on-Insulator MOSFETs
10 Oct 2015 | | Contributor(s):: Stanislav Markov
IWCE 2015 presentation. We investigate the applicability of density functional tight binding (DFTB) theory , coupled to non-equilibrium Green functions (NEGF), for atomistic simulations of ultra-scaled electron devices, using the DFTB+ code . In the context of ultra-thin...
Non-Equilibrium Green's Function (NEGF): A Different Perspective
18 Sep 2015 | | Contributor(s):: Supriyo Datta
The NEGF method was established in the 1960’s through the classic work of Keldysh and others  using the methods of many- body perturbation theory (MBPT) and this approach is widely used in the literature . By contrast I have introduced a different approach starting with the...
3D Topological Insulator Nanowire NEGF Simulation on GPU
28 May 2015 | | Contributor(s):: Gaurav Gupta
This code developed in C and CUDA simulates the carrier transport in three-dimensional (3D) topological insulator (TI) nanowire, with Bi2Se3 as exemplar material, with or without impurities, edge defects, acoustic phonons and vacancies for semi-infinite or metallic...
Modular Approach to Spintronics
28 Apr 2015 | | Contributor(s):: Kerem Yunus Camsari
There has been enormous progress in the last two decades, effectively combining spintronics and magnetics into a powerful force that is shaping the field of memory devices. New materials and phenomena continue to be discovered at an impressive rate, providing an ever-increasing set of building...
Magnetic Tunnel Junction Lab
23 Sep 2013 | | Contributor(s):: Samiran Ganguly, Deepanjan Datta, Chen Shang, Sankarsh Ramadas, Sayeef Salahuddin, Supriyo Datta
Calculate Resistance, Tunneling Magneto Resistance, Spin Torques, and Switching characteristics of a Magnetic Tunnel Junction
Efficiency Enhancement for Nanoelectronic Transport Simulations
01 Feb 2014 | | Contributor(s):: Jun Huang
PhD thesis of Jun HuangContinual technology innovations make it possible to fabricate electronic devices on the order of 10nm. In this nanoscale regime, quantum physics becomes critically important, like energy quantization effects of the narrow channel and the leakage currents due to tunneling....
MATLAB codes from "Nanoscale device modeling: the Green's function method"
09 Oct 2013 | | Contributor(s):: Supriyo Datta
The MATLAB programs used to generate the figures in the article that appeared in Superlattices and Microstructures, vol.28, p.253 (2000).
Physics and Simulation of Nanoscale Electronic and Thermoelectric Devices
25 Jun 2013 | | Contributor(s):: raseong kim
For the past few decades, transistors have been continuously scaled. Dimensions are now at the nanoscale, and device performance has dramatically improved. Nanotechnology is also achieving breakthroughs in thermoelectrics, which have suffered from low efficiencies for decades. As the device scale...
Device Physics Studies of III-V and Silicon MOSFETS for Digital Logic
25 Jun 2013 | | Contributor(s):: Himadri Pal
III-V's are currently gaining a lot of attraction as possible MOSFET channel materials due to their high intrinsic mobility. Several challenges, however, need to be overcome before III-V's can replace silicon (Si) in extremely scaled devices. The effect of low density-of-states of III-V materials...
Quantum and Atomistic Effects in Nanoelectronic Transport Devices
26 Jun 2013 | | Contributor(s):: Neophytos Neophytou
As devices scale towards atomistic sizes, researches in silicon electronic device technology are investigating alternative structures and materials. As predicted by the International Roadmap for Semiconductors, (ITRS), structures will evolve from planar devices into devices that include 3D...
Exploring New Channel Materials for Nanoscale CMOS
27 Jun 2013 | | Contributor(s):: Anisur Rahman
The improved transport properties of new channel materials, such as Ge and III-V semiconductors, along with new device designs, such as dual gate, tri gate or FinFETs, are expected to enhance the performance of nanoscale CMOS devices. Novel process techniques, such as ALD, high-# dielectrics, and...
Carbon Nanotube Electronics: Modeling, Physics, and Applications
27 Jun 2013 | | Contributor(s):: Jing Guo
In recent years, significant progress in understanding the physics of carbon nanotube electronic devices and in identifying potential applications has occurred. In a nanotube, low bias transport can be nearly ballistic across distances of several hundred nanometers. Deposition of high-k gate...
Physics and Simulation of Quasi-Ballistic Transport in Nanoscale Transistors
27 Jun 2013 | | Contributor(s):: Jung-Hoon Rhew
The formidable progress in microelectronics in the last decade has pushed thechannel length of MOSFETs into decanano scale and the speed of BJTs into hundreds of gigahertz. This progress imposes new challenges on device simulation as the essential physics of carrier transport departs that of...