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OMEN Nanowire Homework Problems
24 Jan 2011 | | Contributor(s):: SungGeun Kim
OMEN Nanowire homework problems: anyone who has gone through the first-time user guide of OMEN Nanowire and done the examples in the guide should be able to run simulations in these homework problems and find the answers to them.
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OMEN Nanowire Test Problems
24 Jan 2011 | | Contributor(s):: SungGeun Kim
This test is for students who have gone through the OMEN Nanowire first-time user guide and other learning materials related to nanowire FETs.
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OMEN Nanowire: solve the challenge
05 Feb 2011 | | Contributor(s):: SungGeun Kim
This document includes a challenging problems for OMEN Nanowire users. It challenges users to establish a nanowire transistor structure such that it satisfy the ITRS 2010 requirements.
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Parallel Computing for Realistic Nanoelectronic Simulations
12 Sep 2005 | | Contributor(s):: Gerhard Klimeck
Typical modeling and simulation efforts directed towards the understanding of electron transport at the nanometer scale utilize single workstations as computational engines. Growing understanding of the involved physics and the need to model realistically extended devices increases the complexity...
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Phonon Interactions in Single-Dopant-Based Transistors: Temperature and Size Dependence
12 Nov 2015 | | Contributor(s):: Marc Bescond, Nicolas Cavassilas, Salim Berrada
IWCE 2015 presentation. in this work we investigate the dependence of electron-phonon scattering in single dopant-based nanowire transistor with respect to temperature and dimensions. we use a 3d real-space non-equilibrium green': ; s function (negf) approach where electron-phonon...
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Physics and Simulation of Nanoscale Electronic and Thermoelectric Devices
25 Jun 2013 | | Contributor(s):: raseong kim
For the past few decades, transistors have been continuously scaled. Dimensions are now at the nanoscale, and device performance has dramatically improved. Nanotechnology is also achieving breakthroughs in thermoelectrics, which have suffered from low efficiencies for decades. As the device scale...
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Physics and Simulation of Quasi-Ballistic Transport in Nanoscale Transistors
27 Jun 2013 | | Contributor(s):: Jung-Hoon Rhew
The formidable progress in microelectronics in the last decade has pushed thechannel length of MOSFETs into decanano scale and the speed of BJTs into hundreds of gigahertz. This progress imposes new challenges on device simulation as the essential physics of carrier transport departs that of...
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Quantum and Atomistic Effects in Nanoelectronic Transport Devices
26 Jun 2013 | | Contributor(s):: Neophytos Neophytou
As devices scale towards atomistic sizes, researches in silicon electronic device technology are investigating alternative structures and materials. As predicted by the International Roadmap for Semiconductors, (ITRS), structures will evolve from planar devices into devices that include 3D...
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Quantum and Thermal Effects in Nanoscale Devices
18 Sep 2008 | | Contributor(s):: Dragica Vasileska
To investigate lattice heating within a Monte Carlo device simulation framework, we simultaneously solve the Boltzmann transport equation for the electrons, the 2D Poisson equation to get the self-consistent fields and the hydrodynamic equations for acoustic and optical phonons. The phonon...
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Quantum Transport for Nanostructures
17 Sep 2006 | | Contributor(s):: Mathieu Luisier
Nonequilibrium Green's function techniques, initiated by Schwinger and Kadanoff and Baym allow ones to study the time evolution of a many-particle quantum sys- tem. Knowing the 1-particle Green's functions of a given system, one may evaluate 1-particle quantities like carrier density or...
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Quantum transport in semiconductor nanostructures
03 Mar 2010 | | Contributor(s):: Tillmann Christoph Kubis
PhD thesis of Tillmann Christoph KubisThe main objective of this thesis is to theoretically predict the stationary charge and spin transport in mesoscopic semiconductor quantum devices in the presence of phonons and device imperfections. It is well known that the nonequilibrium Green's function...
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Quantum Transport: Atom to Transistor (Spring 2004)
23 May 2006 | | Contributor(s):: Supriyo Datta
Spring 2004 Please Note: A newer version of this course is now available and we would greatly appreciate your feedback regarding the new format and contents. Course Information Website The development of "nanotechnology" has made it possible to engineer materials and devices...
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recursive algorithm for NEGF in Matlab
13 Nov 2006 | | Contributor(s):: Dmitri Nikonov, Siyu Koswatta
This zip-archive contains two Matlab functions for the recursive solution of the partial matrix inversion and partial 3-matrix multiplication used in the non-equilibrium Green’s function (NEGF) method.recuresealg3d.m- works for 3-diagonal matricesrecuresealgblock3d.m- works for 3-block-diagonal...
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Recursive algorithm for NEGF in Python GPU version
02 Feb 2021 | | Contributor(s):: Ning Yang, Tong Wu, Jing Guo
This folder contains two Python functions for GPU-accelerated simulation, which implements the recursive algorithm in the non-equilibrium Green’s function (NEGF) formalism. Compared to the matlab implementation [1], the GPU version allows massive parallel running over many cores on GPU...
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Resistance of a Molecule
29 Apr 2003 | | Contributor(s):: Magnus Paulsson, Ferdows Zahid, Supriyo Datta
In recent years, several experimental groups have reported measurements of the current-voltage (I-V) characteristics of individual or small numbers of molecules. Even three-terminal measurements showing evidence of transistor action has been reported using carbon nanotubes [1, 2] as well as...
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Resonant Tunneling Diode operation
09 Apr 2010 | | Contributor(s):: Saumitra Raj Mehrotra, Gerhard Klimeck
A resonant tunneling diode (RTD) is a type of diode with a resonant tunneling structure that allows electrons to tunnel through various resonant states at certain energy levels. RTDs can be fabricated using many different types of materials (such as III-V, type IV, II-VI semiconductors) and...
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Resonant Tunneling Diode Simulation with NEGF
18 Aug 2008 | | Contributor(s):: Hong-Hyun Park, Zhengping Jiang, Arun Goud Akkala, Sebastian Steiger, Michael Povolotskyi, Tillmann Christoph Kubis, Jean Michel D Sellier, Yaohua Tan, SungGeun Kim, Mathieu Luisier, Samarth Agarwal, Michael McLennan, Gerhard Klimeck, Junzhe Geng
Simulate 1D RTDs using NEGF.
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Resonant Tunneling Diode Simulation with NEGF: First-Time User Guide
20 May 2009 | | Contributor(s):: Samarth Agarwal, Gerhard Klimeck
This first-time user guide for Resonant Tunneling Diode Simulation with NEGF provides some fundamental concepts regarding RTDs along with details on how device geometry and simulation parameters influence current and charge distribution inside the device.NCN@Purdue
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Resonant Tunneling Diodes: an Exercise
06 Jan 2006 | | Contributor(s):: H.-S. Philip Wong
This homework assignment was created by H.-S. Philip Wong for EE 218 "Introduction to Nanoelectronics and Nanotechnology" (Stanford University). It includes a couple of simple "warm up" exercises and two design problems, intended to teach students the electronic properties...
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Review of Several Quantum Solvers and Applications
11 Jun 2004 | | Contributor(s):: Umberto Ravaioli
Review of Several Quantum Solvers and Applications