Tags: NEGF

Description

The non-equilibrium Greens function (NEGF) formalism provides a powerful conceptual and computational framework for treating quantum transport in nanodevices. It goes beyond the Landauer approach for ballistic, non-interacting electronics to include inelastic scattering and strong correlation effects at an atomistic level.

Check out Supriyo Datta's NEGF page for more information, or browse through the various resources listed below.

All Categories (161-180 of 192)

  1. Quantum Transport: Atom to Transistor (Spring 2004)

    23 May 2006 | | Contributor(s):: Supriyo Datta

    Spring 2004Please Note: A newer version of this course is now available and we would greatly appreciate your feedback regarding the new format and contents.Course Information WebsiteThe development of "nanotechnology" has made it possible to engineer materials and devices on a length scale as...

  2. Exploring Electron Transfer with Density Functional Theory

    11 Jun 2006 | | Contributor(s)::

    This talk will highlight several illustrative applications of constrained density functionaltheory (DFT) to electron transfer dynamics in electronic materials. The kinetics of thesereactions are commonly expressed in terms of well known Marcus parameters (drivingforce, reorganization energy and...

  3. NanoMOS 3.0: First-Time User Guide

    06 Jun 2006 | | Contributor(s):: Kurtis Cantley, Mark Lundstrom

    This tutorial is an introduction to the nanoMOS simulation tool for new users. Descriptions of input and output parameters are included, along with new features associated with the Rappture interface. There are also descriptions of nine examples that are loadable in the new version to help the...

  4. Logic Devices and Circuits on Carbon Nanotubes

    05 Apr 2006 | | Contributor(s):: Joerg Appenzeller

    Over the last years carbon nanotubes (CNs) have attracted an increasing interest as building blocks for nano-electronics applications. Due to their unique properties enabling e.g. ballistic transport at room-temperature over several hundred nanometers, high performance CN field-effect...

  5. Exploring New Channel Materials for Nanoscale CMOS

    21 May 2006 | | Contributor(s):: anisur rahman

    The improved transport properties of new channel materials, such as Ge and III-V semiconductors, along with new device designs, such as dual gate, tri gate or FinFETs, are expected to enhance the performance of nanoscale CMOS devices.Novel process techniques, such as ALD, high-k dielectrics, and...

  6. Device Physics and Simulation of Silicon Nanowire Transistors

    20 May 2006 | | Contributor(s)::

    As the conventional silicon metal-oxide-semiconductor field-effect transistor (MOSFET) approaches its scaling limits, many novel device structures are being extensively explored. Among them, the silicon nanowire transistor (SNWT) has attracted broad attention from both the semiconductor industry...

  7. Nanowire

    19 May 2006 | | Contributor(s):: Hong-Hyun Park, Lang Zeng, Matthew Buresh, Siqi Wang, Gerhard Klimeck, Saumitra Raj Mehrotra, Clemens Heitzinger, Benjamin P Haley

    Simulate 3D nanowire transport in the effective mass approximation with phonon scattering and 3D Poisson self-consistent solution

  8. Nanoscale Transistors: Advanced VLSI Devices (Introductory Lecture)

    20 Apr 2006 | | Contributor(s):: Mark Lundstrom

    Welcome to the ECE 612 Introductory/Overview lecture. This course examines the device physics of advanced transistors and the process, device, circuit, and systems considerations that enter into the development of new integrated circuit technologies.

  9. Molecular Transport Structures: Elastic Scattering, Vibronic Effects and Beyond

    13 Feb 2006 | | Contributor(s):: Mark Ratner, Abraham Nitzan,

    Current experimental efforts are clarifying quite beautifully the nature of charge transport in so-called molecular junctions, in which a single molecule provides the channel for current flow between two electrodes. The theoretical modeling of such structures is challenging, because of the...

  10. A Top-Down Introduction to the NEGF Approach

    14 Jun 2004 | | Contributor(s):: Mark Lundstrom

    A Top-Down Introduction to the NEGF Approach

  11. Resonant Tunneling Diodes: an Exercise

    06 Jan 2006 | | Contributor(s):: H.-S. Philip Wong

    This homework assignment was created by H.-S. Philip Wong for EE 218 "Introduction to Nanoelectronics and Nanotechnology" (Stanford University). It includes a couple of simple "warm up" exercises and two design problems, intended to teach students the electronic properties of resonant tunneling...

  12. Srikant Srinivasan

    http://nanohub.org/members/10733

  13. Fundamentals of Nanoelectronics (Fall 2004)

    01 Sep 2004 | | Contributor(s):: Supriyo Datta, Behtash Behinaein

    Please Note: A newer version of this course is now availableand we would greatly appreciate your feedback regarding the new format and contents.Welcome to the ECE 453 lectures.The development of "nanotechnology" has made it possible to engineer material and devices on a length scale as small as...

  14. Notes on the Ballistic MOSFET

    08 Oct 2005 | | Contributor(s):: Mark Lundstrom

    When analyzing semiconductor devices, the traditional approach is to assume that carriers scatter frequently from ionized impurities, phonons, surface roughness, etc. so that the average distance between scattering events (the so-called mean-free-path, λ) is much shorter than the device. When...

  15. Bandstructure in Nanoelectronics

    01 Nov 2005 | | Contributor(s):: Gerhard Klimeck

    This presentation will highlight, for nanoelectronic device examples, how the effective mass approximation breaks down and why the quantum mechanical nature of the atomically resolved material needs to be included in the device modeling. Atomistic bandstructure effects in resonant tunneling...

  16. Simple Theory of the Ballistic MOSFET

    11 Oct 2005 | | Contributor(s):: Mark Lundstrom

    Silicon nanoelectronics has become silicon nanoelectronics, but we still analyze, design, and think about MOSFETs in more or less in the same way that we did 30 years ago. In this talk, I will describe a simple analysis of the ballistic MOSFET. No MOSFET is truly ballistic, but approaching this...

  17. Parallel Computing for Realistic Nanoelectronic Simulations

    12 Sep 2005 | | Contributor(s):: Gerhard Klimeck

    Typical modeling and simulation efforts directed towards the understanding of electron transport at the nanometer scale utilize single workstations as computational engines. Growing understanding of the involved physics and the need to model realistically extended devices increases the...

  18. 2004 Computational Materials Science Summer School

    07 Jun 2004 |

    This short course will explore a range of computational approaches relevant for nanotechnology.

  19. Review of Several Quantum Solvers and Applications

    11 Jun 2004 | | Contributor(s):: Umberto Ravaioli

    Review of Several Quantum Solvers and Applications

  20. Numerical Aspects of NEGF: The Recursive Green Function Algorithm

    14 Jun 2004 | | Contributor(s):: Gerhard Klimeck

    Numerical Aspects of NEGF: The Recursive Green Function Algorithm