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The non-equilibrium Greens function (NEGF) formalism provides a powerful conceptual and computational framework for treating quantum transport in nanodevices. It goes beyond the Landauer approach for ballistic, non-interacting electronics to include inelastic scattering and strong correlation effects at an atomistic level.
Check out Supriyo Datta's NEGF page for more information, or browse through the various resources listed below.
Non Equilibrium Green's Functions for Dummies: Introduction to the One Particle NEGF equations
3.5 out of 5 stars
30 Oct 2006 | Papers | Contributor(s): Magnus Paulsson
Non equilibrium Green's function methods are regularly used to calculate current and charge densities in nanoscale (both molecular and semiconductor) conductors under bias. This method is mainly...
Modeling Quantum Transport in Nanoscale Transistors
0.0 out of 5 stars
30 Oct 2006 | Papers | Contributor(s): Ramesh Venugopal
As critical transistor dimensions scale below the 100 nm (nanoscale) regime, quan-
tum mechanical effects begin to manifest themselves and affect important device
Carbon Nanotube Electronics: Modeling, Physics, and Applications
5.0 out of 5 stars
30 Oct 2006 | Papers | Contributor(s): Jing Guo
In recent years, significant progress in understanding the physics of carbon nanotube
electronic devices and in identifying potential applications has occurred. In a nanotube,
A Three-Dimensional Quantum Simulation of Silicon Nanowire Transistors with the Effective-Mass Approximation
30 Oct 2006 | Papers | Contributor(s): Jing Wang, Eric Polizzi, Mark Lundstrom
The silicon nanowire transistor (SNWT) is a promising device structure for future
integrated circuits, and simulations will be important for understanding its device physics and
Electrical Resistance: an Atomistic View
26 Oct 2006 | Papers | Contributor(s): Supriyo Datta
This tutorial article presents a “bottom-up” view of electrical resistance starting
from something really small, like a molecule, and then discussing the issues that
arise as we move to...
Nanoscale MOSFETs: Physics, Simulation and Design
26 Oct 2006 | Papers | Contributor(s): Zhibin Ren
This thesis discusses device physics, modeling and design issues of nanoscale
transistors at the quantum level. The principle topics addressed in this report are 1) an
Modeling of Nanoscale Devices
19 Oct 2006 | Papers | Contributor(s): M. P. Anantram, Mark Lundstrom, Dmitri Nikonov
We aim to provide engineers with an introduction
to the nonequilibriumGreen’s function (NEGF) approach, which is a powerful conceptual tool and a practical analysismethod to treat nanoscale...
A Quantum Mechanical Analysis of Channel Access Geometry and Series Resistance in Nanoscale Transistors
19 Oct 2006 | Papers | Contributor(s): Ramesh Venugopal, Sebastien Goasguen, Supriyo Datta, Mark Lundstrom
In this paper, we apply a two-dimensional quantum mechanical simulation scheme to study
the effect of channel access geometries on device performance. This simulation scheme solves the...
Introduction to the Keldysh Nonequilibrium Green Function Technique
06 Oct 2006 | Papers | Contributor(s): A. P. Jauho
Keldysh nonequilibrium Green function technique is used very widely to describe transport phenomena in mesoscopic systems.
The technique is somewhat subtle, and a rigorous treatment would require...
nanoMOS 2.0: A Two -Dimensional Simulator for Quantum Transport in Double-Gate MOSFETs
06 Oct 2006 | Papers | Contributor(s): Zhibin Ren, Ramesh Venugopal, Sebastien Goasguen, Supriyo Datta, Mark Lundstrom
A program to numerically simulate quantum transport in double gate MOSFETs is
described. The program uses a Green’s function approach and a simple treatment of
scattering based on the idea...
Simulating Quantum Transport in Nanoscale Transistors: Real versus Mode-Space Approaches
28 Sep 2006 | Papers | Contributor(s): Zhibin Ren, Supriyo Datta, Mark Lundstrom, Ramesh Venugopal, D. Jovanovic
In this paper, we present a computationally efficient, two-dimensional quantum mechanical sim-
ulation scheme for modeling electron transport in thin body, fully depleted, n-channel, silicon-...
Device Physics and Simulation of Silicon Nanowire Transistors
28 Sep 2006 | Papers | Contributor(s): Jing Wang
As the conventional silicon metal-oxide-semiconductor field-effect transistor
(MOSFET) approaches its scaling limits, many novel device structures are being
extensively explored. Among them,...
Nanoscale Device Modeling: From MOSFETs to Molecules
21 Sep 2006 | Papers | Contributor(s): Prashant Subhash Damle
This thesis presents a rigorous yet practical approach to model quantum transport in nanoscale electronic devices.
As convetional metal oxide semiconductor devices shrink below the one hundred...
Towards Multi-Scale Modeling of Carbon Nanotube Transistors
21 Sep 2006 | Papers | Contributor(s): Jing Guo, Supriyo Datta, Mark Lundstrom, M. P. Anantram
Multiscale simulation approaches are needed in order to address scientific and technological
questions in the rapidly developing field of carbon nanotube electronics. In this paper, we...
Quantum Transport for Nanostructures
17 Sep 2006 | Papers | Contributor(s): Mathieu Luisier
Nonequilibrium Green's function techniques, initiated by Schwinger and Kadanoff
and Baym allow ones to study the time evolution of a many-particle quantum sys-
tem. Knowing the 1-particle...
Understanding Phonon Dynamics via 1D Atomic Chains
28 Aug 2006 | Online Presentations | Contributor(s): Timothy S Fisher
Phonons are the principal carriers of thermal energy in semiconductors and insulators, and they serve a vital role in dissipating heat produced by scattered electrons in semiconductor devices....
Quantum Transport: Atom to Transistor (Spring 2004)
07 Aug 2006 | Courses | Contributor(s): Supriyo Datta
A newer version of this course is now available
and we would greatly appreciate your feedback regarding the new format and contents.
Exploring Electron Transfer with Density Functional Theory
03 Jul 2006 | Online Presentations | Contributor(s): Troy Van Voorhis
This talk will highlight several illustrative applications of constrained density functional
theory (DFT) to electron transfer dynamics in electronic materials. The kinetics of these
NanoMOS 3.0: First-Time User Guide
06 Jun 2006 | Online Presentations | Contributor(s): Kurtis Cantley, Mark Lundstrom
This tutorial is an introduction to the nanoMOS simulation tool for new users. Descriptions of input and output parameters are included, along with new features associated with the Rappture...
Logic Devices and Circuits on Carbon Nanotubes
23 May 2006 | Online Presentations | Contributor(s): Joerg Appenzeller
Over the last years carbon nanotubes (CNs) have attracted an increasing interest as building blocks for nano-electronics applications. Due to their unique properties enabling e.g. ballistic...