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The non-equilibrium Greens function (NEGF) formalism provides a powerful conceptual and computational framework for treating quantum transport in nanodevices. It goes beyond the Landauer approach for ballistic, non-interacting electronics to include inelastic scattering and strong correlation effects at an atomistic level.
Check out Supriyo Datta's NEGF page for more information, or browse through the various resources listed below.
ECE 495N: Fundamentals of Nanoelectronics Lecture Notes (Fall 2009)
04 Feb 2010 | Teaching Materials | Contributor(s): Mehdi Salmani Jelodar, Supriyo Datta (editor)
Lecture notes for the Fall 2009 teaching of ECE 495: Fundamentals of Nanoelectronics.
2003 Molecular Conduction Workshop Agenda
0.0 out of 5 stars
09 Jul 2003 | Presentation Materials
This workshop brought together leading groups in this field to discuss status and key challenges in molecular electronics. Both experimental and theoretical/modeling efforts were discussed.
2004 Computational Materials Science Summer School
29 Aug 2005 | Workshops
This short course will explore a range of computational approaches relevant for nanotechnology.
2004 Linking Bio and Nano Symposium
26 Jul 2004 | Workshops
Explore ways universities can work together in Bio-NanoTechnology. Discover research opportunities in this emerging area. Network with professionals and researchers who share common interests....
2004 Molecular Conduction Workshop
08 Jul 2004 | Workshops
The tutorials supplied below were part of the Molecular Conduction Workshop held at Northwestern University in July of 2004.
Jul 20 2009
2009 NCN@Purdue Summer School: Electronics from the Bottom Up
22 Sep 2009 | Workshops | Contributor(s): Supriyo Datta, Mark Lundstrom, Muhammad A. Alam, Joerg Appenzeller
The school will consist of two lectures in the morning on the Nanostructured Electronic Devices: Percolation and Reliability and an afternoon lecture on Graphene Physics and Devices. A hands on...
Jul 12 2010
2010 NCN@Purdue Summer School: Electronics from the Bottom Up
3D Topological Insulator Nanowire NEGF Simulation on GPU
28 May 2015 | Downloads | Contributor(s): Gaurav Gupta
This code developed in C and CUDA simulates the carrier transport in three-dimensional (3D) topological insulator (TI) nanowire, with Bi2Se3 as exemplar material, with or...
how do we impose G
Open | Responses: 1
According to Kadanoff-Baym book, formula (2-2), one has:
= -i G
How to consider electron-photon interaction w/o using self-energy?
Closed | Responses: 0
In negf, interactions are considered as self-energies. For electron-photon interaction, a perturbation Hamiltonian is derived and then self-energy is found using coupled-field theory. Now,...
Issue in obtaining solution of Poisson eq. for self-consistent calculation in NEGF
I’ve been working on an exercise matlab code posted by Prof. S. Datta.
NEGF Formulism Question
I’m not too familiar with the NEGF formalism. But had a very basic question.
I’ve read that NEGF can be viewed as a “Quantum Boltzmann Equation”. When...
What I want to do is building an aluminum quantum dot coupled to
aluminum leads to observe Coulomb Blockade. To form the tunnel barriers
we oxidize the Al in a plasma without any detailed...
In the time-dependent NEGF equation, given a sigma_in(t,t’) due to the dot, I am getting
an I-V equation that is making it difficult for me to group terms. For instance, looking at...
What can be done with help on NEGF formalism as final year BSc project?
I have been studying the nanoelectronics lectures by Dr. Supriyo Datta & also followed his NanohubU...
Which tool can I use to simulate RITD?
A Quantum Mechanical Analysis of Channel Access Geometry and Series Resistance in Nanoscale Transistors
19 Oct 2006 | Papers | Contributor(s): Ramesh Venugopal, Sebastien Goasguen, Supriyo Datta, Mark Lundstrom
In this paper, we apply a two-dimensional quantum mechanical simulation scheme to study
the effect of channel access geometries on device performance. This simulation scheme solves the...
A Three-Dimensional Quantum Simulation of Silicon Nanowire Transistors with the Effective-Mass Approximation
30 Oct 2006 | Papers | Contributor(s): Jing Wang, Eric Polizzi, Mark Lundstrom
The silicon nanowire transistor (SNWT) is a promising device structure for future
integrated circuits, and simulations will be important for understanding its device physics and
A Top-Down Introduction to the NEGF Approach
4.5 out of 5 stars
14 Jun 2004 | Online Presentations | Contributor(s): Mark Lundstrom