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Nanoelectronic Modeling Lecture 26: NEMO1D -
09 Mar 2010 | | Contributor(s):: Gerhard Klimeck
NEMO1D demonstrated the first industrial strength implementation of NEGF into a simulator that quantitatively simulated resonant tunneling diodes. The development of efficient algorithms that simulate scattering from polar optical phonons, acoustic phonons, alloy disorder, and interface...
NEGF theory of quantum photovoltaic devices
22 Sep 2011 | | Contributor(s):: Urs Aeberhard
Many high-efficiency photovoltaics concepts require an advanced control and manipulation of the optoelectronic properties of the active device structure, leading to a prominent role of low dimensional absorbers such as quantum wells, wires and dots in the implementation of these concepts....
Quantum transport in semiconductor nanostructures
04 Mar 2010 | | Contributor(s):: Tillmann Christoph Kubis
PhD thesis of Tillmann Christoph KubisThe main objective of this thesis is to theoretically predict the stationary charge and spin transport in mesoscopic semiconductor quantum devices in the presence of phonons and device imperfections. It is well known that the nonequilibrium Green's function...
Scattering in NEGF: Made simple
09 Nov 2009 | | Contributor(s):: Dmitri Nikonov, Himadri Pal, George Bourianoff
Formalism for describing electron-phonon scattering, surface scattering, and spin relaxation is dervied for the Keldysh non-equilibrium Green's functions (NEGF) method. Approximation useful for efficient numerical solution are described. The specific case of the nanoMOS simulator is...