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ECE 606 Lecture 26: The Future of Computational Electronics
20 Dec 2012 | Online Presentations | Contributor(s): Gerhard Klimeck
Future Transistors and Single Atom Transistors; New Modeling Tools (NEMO); nanoHUB: Cloud Computing - Software as a Service
Tutorial 4a: High Bias Quantum Transport in Resonant Tunneling Diodes
29 Mar 2011 | Online Presentations | Contributor(s): Gerhard Klimeck
Resonant Tunneling Diodes - NEMO1D: Motivation / History / Key Insights
Open 1D Systems: Transmission through Double Barrier Structures - Resonant Tunneling
Introduction to RTDs:...
Tutorial 4b: Introduction to the NEMO3D Tool - Electronic Structure and Transport in 3D
Electronic Structure and Transport in 3D - Quantum Dots, Nanowires and Ultra-Thin Body Transistors
Nanoelectronic Modeling Lecture 40: Performance Limitations of Graphene Nanoribbon Tunneling FETS due to Line Edge Roughness
05 Aug 2010 | Online Presentations | Contributor(s): Gerhard Klimeck, Mathieu Luisier
This presentation the effects of line edge roughness on graphene nano ribbon (GNR) transitors..
GNR TFET Simulation
pz Tight-Binding Orbital Model
Nanoelectronic Modeling Lecture 39: OMEN: Band-to-Band-Tunneling Transistors
This presentation discusses the motivation for band-to-band tunneling transistors to lower the power requirements of the next generation transistors. The capabilities of OMEN to model such...
Nanoelectronic Modeling Lecture 35: Alloy Disorder in Nanowires
05 Aug 2010 | Online Presentations | Contributor(s): Gerhard Klimeck, Timothy Boykin, Neerav Kharche, Mathieu Luisier, Neophytos Neophytou
This presentation discusses the consequences of Alloy Disorder in unstrained strained AlGaAs nanowires
Relationship between dispersion relationship and transmission in perfectly ordered...
Nanoelectronic Modeling Lecture 34: Alloy Disorder in Quantum Dots
05 Aug 2010 | Online Presentations | Contributor(s): Gerhard Klimeck, Timothy Boykin, Chris Bowen
This presentation discusses the consequences of Alloy Disorder in strained InGaAs Quantum Dots
Reminder of the origin of bandstructure and bandstructure engineering
What happens when...
Nanoelectronic Modeling Lecture 32: Strain Layer Design through Quantum Dot TCAD
04 Aug 2010 | Online Presentations | Contributor(s): Gerhard Klimeck, Muhammad Usman
This presentation demonstrates the utilization of NEMO3D to understand complex experimental data of embedded InAs quantum dots that are selectively overgrown with a strain reducing InGaAs layer....
Nanoelectronic Modeling Lecture 31a: Long-Range Strain in InGaAs Quantum Dots
04 Aug 2010 | Online Presentations | Contributor(s): Gerhard Klimeck
This presentation demonstrates the importance of long-range strain in quantum dots
Numerical analysis of the importance of the buffer around the central quantum dot - local band edges –...
Nanoelectronic Modeling Lecture 29: Introduction to the NEMO3D Tool
This presentation provides a very high level software overview of NEMO3D. The items discussed are:
Modeling Agenda and Motivation
Tight-Binding Motivation and basic formula...
Nanoelectronic Modeling Lecture 28: Introduction to Quantum Dots and Modeling Needs/Requirements
20 Jul 2010 | Online Presentations | Contributor(s): Gerhard Klimeck
This presentation provides a very high level software overview of NEMO1D.
This lecture provides a very high level overview of quantum dots. The main issues and...
Nanoelectronic Modeling Lecture 25a: NEMO1D - Full Bandstructure Effects
07 Jul 2010 | Online Presentations | Contributor(s): Gerhard Klimeck
(quantitative RTD modeling at room temperature)
Nanoelectronic Modeling Lecture 23: NEMO1D - Importance of New Boundary Conditions
09 Mar 2010 | Online Presentations | Contributor(s): Gerhard Klimeck
One of the key insights gained during the NEMO1D project was the development of new boundary conditions that enabled the modeling of realistically extended Resonant Tunneling Diodes (RTDs). The...
Nanoelectronic Modeling Lecture 24: NEMO1D - Incoherent Scattering
Incoherent processes due to phonons, interface roughness and disorder had been suspected to be the primary source of the valley current of resonant tunneling diodes (RTDs) at the beginning of...
Nanoelectronic Modeling Lecture 25b: NEMO1D - Hole Bandstructure in Quantum Wells and Hole Transport in RTDs
Heterostructures such as resonant tunneling diodes, quantum well photodetectors and lasers, and cascade lasers break the symmetry of the crystalline lattice. Such break in lattice symmetry...
Nanoelectronic Modeling Lecture 26: NEMO1D -
NEMO1D demonstrated the first industrial strength implementation of NEGF into a simulator that quantitatively simulated resonant tunneling diodes. The development of efficient algorithms that...
Nanoelectronic Modeling Lecture 27: NEMO1D -
This presentation provides a very high level software overview of NEMO1D. The items discussed are:
Graphical user interface
Nanoelectronic Modeling Lecture 22: NEMO1D - Motivation, History and Key Insights
07 Feb 2010 | Online Presentations | Contributor(s): Gerhard Klimeck
The primary objective of the NEMO-1D tool was the quantitative modeling of high performance Resonant Tunneling Diodes (RTDs). The software tool was intended for Engineers (concepts, fast...
Nanoelectronic Modeling Lecture 02: (NEMO) Motivation and Background
25 Jan 2010 | Online Presentations | Contributor(s): Gerhard Klimeck, Dragica Vasileska
Fundamental device modeling on the nanometer scale must include effect of open systems, high bias, and an atomistic basis. The non-equilibrium Green Function Formalism (NEGF) can include all these...
Nanoelectronic Modeling: Multimillion Atom Simulations, Transport, and HPC Scaling to 23,000 Processors
5.0 out of 5 stars
07 Mar 2008 | Online Presentations | Contributor(s): Gerhard Klimeck
Future field effect transistors will be on the same length scales as “esoteric” devices such as quantum dots,
nanowires, ultra-scaled quantum wells, and resonant tunneling diodes. In those...