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Additional Tutorials on Selected Topics in Nanotechnology
29 Mar 2011 | | Contributor(s):: Gerhard Klimeck, Umesh V. Waghmare, Timothy S Fisher, N. S. Vidhyadhiraja
Select tutorials in nanotechnology, a part of the 2010 NCN@Purdue Summer School: Electronics from the Bottom Up.
ANGEL - A Nonequilibrium Green Function Solver for LEDs
18 Jan 2010 | | Contributor(s):: sebastian steiger
An MPI-parallelized implementation of 1-D NEGF for heterostructures. Includes off-diagonal scattering. Effective mass band structure for electrons and holes. The online tool only provides basic NEGF functionality without scattering.
Introduction to Quantum Dots and Modeling Needs/ Requirements
28 Aug 2014 |
Posted by Tanya Faltens
Nanoelectronic Modeling Lecture 22: NEMO1D - Motivation, History and Key Insights
05 Feb 2010 | | Contributor(s):: Gerhard Klimeck
The primary objective of the NEMO-1D tool was the quantitative modeling of high performance Resonant Tunneling Diodes (RTDs). The software tool was intended for Engineers (concepts, fast turn-around, interactive) and Scientists (detailed device anaysis). Therefore various degrees of...
Nanoelectronic Modeling Lecture 23: NEMO1D - Importance of New Boundary Conditions
02 Mar 2010 | | Contributor(s):: Gerhard Klimeck
One of the key insights gained during the NEMO1D project was the development of new boundary conditions that enabled the modeling of realistically extended Resonant Tunneling Diodes (RTDs). The new boundary conditions are based on the partitioning of the device into emitter and collector...
Nanoelectronic Modeling Lecture 24: NEMO1D - Incoherent Scattering
Incoherent processes due to phonons, interface roughness and disorder had been suspected to be the primary source of the valley current of resonant tunneling diodes (RTDs) at the beginning of the NEMO1D project in 1994. The modeling tool NEMO was created at Texas Instruments to fundamentally...
Nanoelectronic Modeling Lecture 25a: NEMO1D - Full Bandstructure Effects
(quantitative RTD modeling at room temperature)
Nanoelectronic Modeling Lecture 25b: NEMO1D - Hole Bandstructure in Quantum Wells and Hole Transport in RTDs
Heterostructures such as resonant tunneling diodes, quantum well photodetectors and lasers, and cascade lasers break the symmetry of the crystalline lattice. Such break in lattice symmetry causes a strong interaction of heavy-, light- and split-off hole bands. The bandstructure of holes and the...
Nanoelectronic Modeling Lecture 26: NEMO1D -
NEMO1D demonstrated the first industrial strength implementation of NEGF into a simulator that quantitatively simulated resonant tunneling diodes. The development of efficient algorithms that simulate scattering from polar optical phonons, acoustic phonons, alloy disorder, and interface...
Nanoelectronic Modeling Lecture 27: NEMO1D -
This presentation provides a very high level software overview of NEMO1D. The items discussed are:User requirementsGraphical user interfaceSoftware structureProgram developer requirementsDynamic I/O design for batch and GUIResonance finding algorithmInhomogeneous energy meshingInformation flow,...
Nanoelectronic Modeling Lecture 28: Introduction to Quantum Dots and Modeling Needs/Requirements
This presentation provides a very high level software overview of NEMO1D.Learning Objectives:This lecture provides a very high level overview of quantum dots. The main issues and questions that are addressed are:Length scale of quantum dotsDefinition of a quantum dotQuantum dot examples and...
Nanoelectronic Modeling Lecture 29: Introduction to the NEMO3D Tool
This presentation provides a very high level software overview of NEMO3D. The items discussed are:Modeling Agenda and MotivationTight-Binding Motivation and basic formula expressionsTight binding representation of strainSoftware structureNEMO3D algorithm flow NEMO3D parallelization scheme –...
Nanoelectronic Modeling Lecture 31a: Long-Range Strain in InGaAs Quantum Dots
07 Jul 2010 | | Contributor(s):: Gerhard Klimeck
This presentation demonstrates the importance of long-range strain in quantum dotsNumerical analysis of the importance of the buffer around the central quantum dot - local band edges – vertical and horizontal extension of the bufferControlled overgrowth can tune the electron energies in the...
Tutorial 4: Far-From-Equilibrium Quantum Transport
23 Mar 2011 | | Contributor(s):: Gerhard Klimeck
These lectures focus on the application of the theories using the nanoelectronic modeling tools NEMO 1- D, NEMO 3-D, and OMEN to realistically extended devices. Topics to be covered are realistic resonant tunneling diodes, quantum dots, nanowires, and Ultra-Thin-Body Transistors.
Tutorial 4a: High Bias Quantum Transport in Resonant Tunneling Diodes
Outline:Resonant Tunneling Diodes - NEMO1D: Motivation / History / Key InsightsOpen 1D Systems: Transmission through Double Barrier Structures - Resonant TunnelingIntroduction to RTDs: Linear Potential DropIntroduction to RTDs: Realistic Doping ProfilesIntroduction to RTDs: Relaxation Scattering...