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Nanoelectronic Modeling Lecture 41: Full-Band and Atomistic Simulation of Realistic 40nm InAs HEMT
05 Aug 2010 | | Contributor(s):: Gerhard Klimeck, Neerav Kharche, Neophytos Neophytou, Mathieu Luisier
This presentation demonstrates the OMEN capabilities to perform a multi-scale simulation of advanced InAs-based high mobility transistors.Learning Objectives:Quantum Transport Simulator Full-Band and Atomistic III-V HEMTs Performance Analysis Good Agreement with Experiment Some Open Issues...
Nanoelectronic Modeling Lecture 39: OMEN: Band-to-Band-Tunneling Transistors
05 Aug 2010 | | Contributor(s):: Gerhard Klimeck, Mathieu Luisier
This presentation discusses the motivation for band-to-band tunneling transistors to lower the power requirements of the next generation transistors. The capabilities of OMEN to model such complex devices on an atomistic representation is demonstrated.Learning Objectives:Band-To-Band Tunneling...