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Theory and characterization of random defect formation and its implication in variability of nanoscale transistors
30 Sep 2011 | Contributor(s):: Ahmad Ehteshamul Islam
Over the last 50 years, carrier transport has been the central research topic in the semiconductor area. The outcome was a dramatic improvement in the performance of a transistor, which is one of the basic building blocks in almost all the modern electronic devices. However, nanoscale dimensions...
Essential Aspects of Negative Bias Temperature Instability (NBTI)
01 May 2011 | Contributor(s):: Ahmad Ehteshamul Islam, Souvik Mahapatra, Muhammad Alam
We develop a comprehensive theoretical framework for explaining the key and characteristic experimental signatures of NBTI. The framework is based on an uncorrelated dynamics of interface-defect creation/annihilation described by Reaction-Diffusion (R-D) theory and hole trapping/detrapping...
Ahmad Ehteshamul Islam