Tags: Ph.D. thesis

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  1. Application of the Keldysh Formalism to Quantum Device Modeling and Analysis

    14 Jan 2008 | | Contributor(s):: Roger Lake

    The effect of inelastic scattering on quantum electron transport through layered semi-conductor structures is studied numerically using the approach based on the non-equilibrium Green's function formalism of Keldysh, Kadanoff, and Baym. The Markov assumption is not made, and the energy...

  2. Carbon Nanotube Electronics: Modeling, Physics, and Applications

    30 Oct 2006 | | Contributor(s):: Jing Guo

    In recent years, significant progress in understanding the physics of carbon nanotube electronic devices and in identifying potential applications has occurred. In a nanotube, low bias transport can be nearly ballistic across distances of several hundred nanometers. Deposition of high-κ gate...

  3. Carbon Nanotube Electronics: Modeling, Physics, and Applications

    27 Jun 2013 | | Contributor(s):: Jing Guo

    In recent years, significant progress in understanding the physics of carbon nanotube electronic devices and in identifying potential applications has occurred. In a nanotube, low bias transport can be nearly ballistic across distances of several hundred nanometers. Deposition of high-k gate...

  4. Computational and Experimental Study of Transport in Advanced Silicon Devices

    27 Jun 2013 | | Contributor(s):: Farzin Assad

    In this thesis, we study electron transport in advanced silicon devices by focusing on the two most important classes of devices: the bipolar junction transistor (BJT) and the MOSFET. In regards to the BJT, we will compare and assess the solutions of a physically detailed microscopic model to...

  5. Device Physics and Simulation of Silicon Nanowire Transistors

    28 Sep 2006 |

    As the conventional silicon metal-oxide-semiconductor field-effect transistor (MOSFET) approaches its scaling limits, many novel device structures are being extensively explored. Among them, the silicon nanowire transistor (SNWT) has attracted broad attention from both the semiconductor industry...

  6. Device Physics and Simulation of Silicon Nanowire Transistors

    27 Jun 2013 | | Contributor(s):: Jing Wang

    As the conventional silicon metal-oxide-semiconductor field-effect transistor (MOSFET) approaches its scaling limits, many novel device structures are being extensively explored. Among them, the silicon nanowire transistor (SNWT) has attracted broad attention from both the semiconductor industry...

  7. Device Physics Studies of III-V and Silicon MOSFETS for Digital Logic

    25 Jun 2013 | | Contributor(s):: Himadri Pal

    III-V's are currently gaining a lot of attraction as possible MOSFET channel materials due to their high intrinsic mobility. Several challenges, however, need to be overcome before III-V's can replace silicon (Si) in extremely scaled devices. The effect of low density-of-states of III-V...

  8. Direct Solution of the Boltzmann Transport Equation in Nanoscale Si Devices

    27 Jun 2013 | | Contributor(s):: Kausar Banoo

    Predictive semiconductor device simulation faces a challenge these days. As devices are scaled to nanoscale lengths, the collision-dominated transport equations used in current device simulators can no longer be applied. On the other hand, the use of a better, more accurate Boltzmann Transport...

  9. Efficiency Enhancement for Nanoelectronic Transport Simulations

    01 Feb 2014 | | Contributor(s):: Jun Huang

    PhD thesis of Jun HuangContinual technology innovations make it possible to fabricate electronic devices on the order of 10nm. In this nanoscale regime, quantum physics becomes critically important, like energy quantization effects of the narrow channel and the leakage currents due to tunneling....

  10. Electron Phonon Interaction in Carbon Nanotube Devices

    27 Jun 2013 | | Contributor(s):: Sayed Hasan

    With the end of silicon technology scaling in sight, there has been a lot of interest in alternate novel channel materials and device geometry. Carbon nanotubes, the ultimate one-dimensional (1D) wire, is one such possibility. Since the report of the first CNT transistors, lots has been learned...

  11. Electron-Phonon and Electron-Electron Interactions in Quantum Transport

    14 Jan 2008 | | Contributor(s):: Gerhard Klimeck

    The objective of this work is to shed light on electron transport through sub-micron semi-conductor structures, where electronic state quantization, electron-electron interactions and electron-phonon interactions are important. We concentrate here on the most developed vertical quantum device,...

  12. Exploring New Channel Materials for Nanoscale CMOS

    21 May 2006 | | Contributor(s):: anisur rahman

    The improved transport properties of new channel materials, such as Ge and III-V semiconductors, along with new device designs, such as dual gate, tri gate or FinFETs, are expected to enhance the performance of nanoscale CMOS devices.Novel process techniques, such as ALD, high-k dielectrics, and...

  13. Exploring New Channel Materials for Nanoscale CMOS

    27 Jun 2013 | | Contributor(s):: Anisur Rahman

    The improved transport properties of new channel materials, such as Ge and III-V semiconductors, along with new device designs, such as dual gate, tri gate or FinFETs, are expected to enhance the performance of nanoscale CMOS devices. Novel process techniques, such as ALD, high-# dielectrics,...

  14. First Principles Non-Equilibrium Green's Function Modeling of Vacum and Oxide Barrier Tunneling

    01 Dec 2008 | | Contributor(s):: Kirk H. Bevan

    Vacuum and oxide barrier electron tunneling phenomena have been studied at length for several decades. Yet with electron device barrier widths now commonly measured in atomic units, complex quantum mechanical phenomena such as wavefunction coupling, surface states, and interface bonds have begun...

  15. III-V Nanoscale MOSFETS: Physics, Modeling, and Design

    25 Jun 2013 | | Contributor(s):: Yang Liu

    As predicted by the International Roadmap for Semiconductors (ITRS), power consumption has been the bottleneck for future silicon CMOS technology scaling. To circumvent this limit, researchers are investigating alternative structures and materials, among which III-V compound semiconductor-based...

  16. Inelastic Transport in Carbon Nanotube Electronic and Optoelectronic Devices

    26 Jun 2013 | | Contributor(s):: Siyu Koswatta

    Discovered in the early 1990's, carbon nanotubes (CNTs) are found to have exceptional physical characteristics compared to conventional semiconductor materials, with much potential for devices surpassing the performance of present-day electronics. Semiconducting CNTs have large carrier...

  17. Landauer Approach to Thermoelectrics

    21 Jun 2013 | | Contributor(s):: Changwook Jeong

    Many efforts have been made to search for materials that maximize the thermoelectric (TE) figure of merit, ZT, but for decades, the improvement has been limited because of the interdependent material parameters that determine ZT. Recently, several breakthroughs have been reported by applying...

  18. Modeling Quantum Transport in Nanoscale Transistors

    30 Oct 2006 | | Contributor(s):: ramesh venugopal

    As critical transistor dimensions scale below the 100 nm (nanoscale) regime, quan- tum mechanical effects begin to manifest themselves and affect important device performance metrics. Therefore, simulation tools which can be applied to design nanoscale transistors in the future, require new...

  19. Nanoscale Device Modeling: From MOSFETs to Molecules

    20 Sep 2006 |

    This thesis presents a rigorous yet practical approach to model quantum transport in nanoscale electronic devices.As convetional metal oxide semiconductor devices shrink below the one hundred nanometer regime, quantum mechanical effects are beginning to play an increasingly important role in...

  20. Nanoscale MOSFETs: Physics, Simulation and Design

    26 Oct 2006 |

    This thesis discusses device physics, modeling and design issues of nanoscale transistors at the quantum level. The principle topics addressed in this report are 1) an implementation of appropriate physics and methodology in device modeling, 2) development of a new TCAD (technology computer...