Due to local system maintenance on Tuesday, September 27th, nanoHUB will be unable to launch simulation jobs on clusters conte, rice, carter, and hansen. We apologize for any inconvenience.
Find information on common issues.
Ask questions and find answers from other users.
Suggest a new site feature or improvement.
Check on status of your tickets.
Efficiency Enhancement for Nanoelectronic Transport Simulations
02 Feb 2014 | Papers | Contributor(s): Jun Huang
PhD thesis of Jun Huang
Continual technology innovations make it possible to fabricate electronic devices on the order of 10nm. In this nanoscale regime, quantum physics becomes critically...
Structure and Morphology of Silicon Germanium Thin Films
30 Dec 2013 | Papers | Contributor(s): Brian Demczyk
Single layer silicon and germanium films as well as nominally 50-50 silicon-germanium alloys were deposited on single crystal silicon and germanium (001) and (111) substrates by ultrahigh vacuum...
Device Physics Studies of III-V and Silicon MOSFETS for Digital Logic
28 Jun 2013 | Papers | Contributor(s): Himadri Pal
III-V's are currently gaining a lot of attraction as possible MOSFET channel materials due to their high intrinsic mobility. Several challenges, however, need to be overcome before III-V's can...
III-V Nanoscale MOSFETS: Physics, Modeling, and Design
28 Jun 2013 | Papers | Contributor(s): Yang Liu
As predicted by the International Roadmap for Semiconductors (ITRS), power consumption has been the bottleneck for future silicon CMOS technology scaling. To circumvent this limit, researchers are...
Inelastic Transport in Carbon Nanotube Electronic and Optoelectronic Devices
28 Jun 2013 | Papers | Contributor(s): Siyu Koswatta
Discovered in the early 1990's, carbon nanotubes (CNTs) are found to have exceptional physical characteristics compared to conventional semiconductor materials, with much potential for devices...
Physics and Simulation of Nanoscale Electronic and Thermoelectric Devices
28 Jun 2013 | Papers | Contributor(s): raseong kim
For the past few decades, transistors have been continuously scaled. Dimensions are now at the nanoscale, and device performance has dramatically improved. Nanotechnology is also achieving...
Quantum and Atomistic Effects in Nanoelectronic Transport Devices
28 Jun 2013 | Papers | Contributor(s): Neophytos Neophytou
As devices scale towards atomistic sizes, researches in silicon electronic device technology are investigating alternative structures and materials. As predicted by the International Roadmap for...
Carbon Nanotube Electronics: Modeling, Physics, and Applications
28 Jun 2013 | Papers | Contributor(s): Jing Guo
In recent years, significant progress in understanding the physics of carbon nanotube electronic devices and in identifying potential applications has occurred. In a nanotube, low bias transport...
Computational and Experimental Study of Transport in Advanced Silicon Devices
28 Jun 2013 | Papers | Contributor(s): Farzin Assad
In this thesis, we study electron transport in advanced silicon devices by focusing on the two most important classes of devices: the bipolar junction transistor (BJT) and the MOSFET. In regards...
Device Physics and Simulation of Silicon Nanowire Transistors
28 Jun 2013 | Papers | Contributor(s): Jing Wang
As the conventional silicon metal-oxide-semiconductor field-effect transistor (MOSFET) approaches its scaling limits, many novel device structures are being extensively explored. Among them, the...
Direct Solution of the Boltzmann Transport Equation in Nanoscale Si Devices
28 Jun 2013 | Papers | Contributor(s): Kausar Banoo
Predictive semiconductor device simulation faces a challenge these days. As devices are scaled to nanoscale lengths, the collision-dominated transport equations used in current device simulators...
Electron Phonon Interaction in Carbon Nanotube Devices
28 Jun 2013 | Papers | Contributor(s): Sayed Hasan
With the end of silicon technology scaling in sight, there has been a lot of interest in alternate novel channel materials and device geometry. Carbon nanotubes, the ultimate one-dimensional (1D)...
Exploring New Channel Materials for Nanoscale CMOS
28 Jun 2013 | Papers | Contributor(s): Anisur Rahman
The improved transport properties of new channel materials, such as Ge and III-V semiconductors, along with new device designs, such as dual gate, tri gate or FinFETs, are expected to enhance the...
Nanoscale MOSFETS: Physics, Simulation and Design
28 Jun 2013 | Papers | Contributor(s): Zhibin Ren
This thesis discusses device physics, modeling and design issues of nanoscale transistors at the quantum level. The principle topics addressed in this report are 1) an implementation of...
Physics and Simulation of Quasi-Ballistic Transport in Nanoscale Transistors
28 Jun 2013 | Papers | Contributor(s): Jung-Hoon Rhew
The formidable progress in microelectronics in the last decade has pushed the
channel length of MOSFETs into decanano scale and the speed of BJTs into hundreds of gigahertz. This progress imposes...
Two-Dimensional Scattering Matrix Simulations of Si MOSFET'S
28 Jun 2013 | Papers | Contributor(s): Carl R. Huster
For many years now, solid state device simulators have been based on the drift-diffusion equations. As transistor sizes have been reduced, there has been considerable concern about the predictive...
Landauer Approach to Thermoelectrics
23 Jun 2013 | Papers | Contributor(s): Changwook Jeong
Many efforts have been made to search for materials that maximize the thermoelectric (TE) figure of merit, ZT, but for decades, the improvement has been limited because of the interdependent...
Theoretical studies of rolled-up and wrinkled nanomembranes
20 Feb 2012 | Papers | Contributor(s): Peter Cendula
PhD thesis along with additional movie files.
Theory and characterization of random defect formation and its implication in variability of nanoscale transistors
30 Sep 2011 | Papers | Contributor(s): Ahmad Ehteshamul Islam
Over the last 50 years, carrier transport has been the central research topic in the semiconductor area. The outcome was a dramatic improvement in the performance of a transistor, which is one of...
Thermal Property Measurements of High Pressure Metal Hydrides
02 Jun 2011 | Papers | Contributor(s): Scott M. Flueckiger
Metal hydrides are potential materials for onboard hydrogen storage. Thermal property measurements are needed to optimize the thermal management design of metal hydride storage systems which...