
Quantitative Modeling and Simulation of Quantum Dots
18 Apr 2011  Presentation Materials  Contributor(s): Muhammad Usman
Quantum dots grown by selfassembly process are typically constructed by 50,000 to 5,000,000 structural atoms which confine a small, countable number of extra electrons or holes in a space that is...
http://nanohub.org/resources/9332

Professor's and Student's Perceptions and Experiences of Computational Simulations as Learning Tools
04 Apr 2010  Papers  Contributor(s): Alejandra J. Magana
Computational simulations are becoming a critical component of scientific and engineering research, and now are becoming an important component for learning. This dissertation provides findings...
http://nanohub.org/resources/8750

Quantum transport in semiconductor nanostructures
04 Mar 2010  Papers  Contributor(s): Tillmann Christoph Kubis
PhD thesis of Tillmann Christoph Kubis
The main objective of this thesis is to theoretically predict the stationary charge and spin transport in mesoscopic semiconductor quantum devices in the...
http://nanohub.org/resources/8612

Role of SpinOrbit Interaction and Berry's Phase in AharonovBohm Oscillations
04 Mar 2009  Papers  Contributor(s): JengBang (Tony) Yau
In this thesis we report the results of study on the role of spinorbit (SO) interaction in AharonovBohm (AB) oscillations measured in (311)A GaAs twodimensional (2D) holes, and the observed...
http://nanohub.org/resources/6435

First Principles NonEquilibrium Green's Function Modeling of Vacum and Oxide Barrier Tunneling
01 Dec 2008  Papers  Contributor(s): Kirk H. Bevan
Vacuum and oxide barrier electron tunneling phenomena have been studied at length for several decades. Yet with electron device barrier widths now commonly measured in atomic units, complex...
http://nanohub.org/resources/5957

Application of the Keldysh Formalism to Quantum Device Modeling and Analysis
14 Jan 2008  Papers  Contributor(s): Roger Lake
The effect of inelastic scattering on quantum electron transport through layered semiconductor structures is studied numerically using the approach based on the nonequilibrium Green's function...
http://nanohub.org/resources/3833

ElectronPhonon and ElectronElectron Interactions in Quantum Transport
14 Jan 2008  Papers  Contributor(s): Gerhard Klimeck
The objective of this work is to shed light on electron transport through submicron semiconductor structures, where electronic state quantization, electronelectron interactions and...
http://nanohub.org/resources/3831

Quantum Ballistic Transport in Semiconductor Heterostructures
27 Aug 2007  Papers  Contributor(s): Michael McLennan
The development of epitaxial growth techniques has sparked a growing interest in an entirely quantum mechanical description of carrier transport. Fabrication methods, such as molecular beam...
http://nanohub.org/resources/3086

Modeling Quantum Transport in Nanoscale Transistors
30 Oct 2006  Papers  Contributor(s): Ramesh Venugopal
As critical transistor dimensions scale below the 100 nm (nanoscale) regime, quan
tum mechanical effects begin to manifest themselves and affect important device
performance metrics....
http://nanohub.org/resources/1930

Carbon Nanotube Electronics: Modeling, Physics, and Applications
30 Oct 2006  Papers  Contributor(s): Jing Guo
In recent years, significant progress in understanding the physics of carbon nanotube
electronic devices and in identifying potential applications has occurred. In a nanotube,
low bias...
http://nanohub.org/resources/1928

Nanoscale MOSFETs: Physics, Simulation and Design
26 Oct 2006  Papers  Contributor(s): Zhibin Ren
This thesis discusses device physics, modeling and design issues of nanoscale
transistors at the quantum level. The principle topics addressed in this report are 1) an
implementation of...
http://nanohub.org/resources/1917

Device Physics and Simulation of Silicon Nanowire Transistors
28 Sep 2006  Papers  Contributor(s): Jing Wang
As the conventional silicon metaloxidesemiconductor fieldeffect transistor
(MOSFET) approaches its scaling limits, many novel device structures are being
extensively explored. Among them,...
http://nanohub.org/resources/1833

Nanoscale Device Modeling: From MOSFETs to Molecules
21 Sep 2006  Papers  Contributor(s): Prashant Subhash Damle
This thesis presents a rigorous yet practical approach to model quantum transport in nanoscale electronic devices.
As convetional metal oxide semiconductor devices shrink below the one hundred...
http://nanohub.org/resources/1816

Exploring New Channel Materials for Nanoscale CMOS
21 May 2006  Papers  Contributor(s): Anisur Rahman
The improved transport properties of new channel materials, such as Ge and IIIV semiconductors, along with new device designs, such as dual gate, tri gate or FinFETs, are expected to enhance the...
http://nanohub.org/resources/1315