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Quantitative Modeling and Simulation of Quantum Dots
18 Apr 2011 | Presentation Materials | Contributor(s): Muhammad Usman
Quantum dots grown by self-assembly process are typically constructed by 50,000 to 5,000,000 structural atoms which confine a small, countable number of extra electrons or holes in a space that is...
Professor's and Student's Perceptions and Experiences of Computational Simulations as Learning Tools
04 Apr 2010 | Papers | Contributor(s): Alejandra J. Magana
Computational simulations are becoming a critical component of scientific and engineering research, and now are becoming an important component for learning. This dissertation provides findings...
Quantum transport in semiconductor nanostructures
04 Mar 2010 | Papers | Contributor(s): Tillmann Christoph Kubis
PhD thesis of Tillmann Christoph Kubis
The main objective of this thesis is to theoretically predict the stationary charge and spin transport in mesoscopic semiconductor quantum devices in the...
Role of Spin-Orbit Interaction and Berry's Phase in Aharonov-Bohm Oscillations
04 Mar 2009 | Papers | Contributor(s): Jeng-Bang (Tony) Yau
In this thesis we report the results of study on the role of spin-orbit (SO) interaction in Aharonov-Bohm (A-B) oscillations measured in (311)A GaAs two-dimensional (2D) holes, and the observed...
First Principles Non-Equilibrium Green's Function Modeling of Vacum and Oxide Barrier Tunneling
0.0 out of 5 stars
01 Dec 2008 | Papers | Contributor(s): Kirk H. Bevan
Vacuum and oxide barrier electron tunneling phenomena have been studied at length for several decades. Yet with electron device barrier widths now commonly measured in atomic units, complex...
Application of the Keldysh Formalism to Quantum Device Modeling and Analysis
14 Jan 2008 | Papers | Contributor(s): Roger Lake
The effect of inelastic scattering on quantum electron transport through layered semi-conductor structures is studied numerically using the approach based on the non-equilibrium Green's function...
Electron-Phonon and Electron-Electron Interactions in Quantum Transport
14 Jan 2008 | Papers | Contributor(s): Gerhard Klimeck
The objective of this work is to shed light on electron transport through sub-micron semi-conductor structures, where electronic state quantization, electron-electron interactions and...
Quantum Ballistic Transport in Semiconductor Heterostructures
3.0 out of 5 stars
27 Aug 2007 | Papers | Contributor(s): Michael McLennan
The development of epitaxial growth techniques has sparked a growing interest in an entirely quantum mechanical description of carrier transport. Fabrication methods, such as molecular beam...
Modeling Quantum Transport in Nanoscale Transistors
30 Oct 2006 | Papers | Contributor(s): Ramesh Venugopal
As critical transistor dimensions scale below the 100 nm (nanoscale) regime, quan-
tum mechanical effects begin to manifest themselves and affect important device
Carbon Nanotube Electronics: Modeling, Physics, and Applications
5.0 out of 5 stars
30 Oct 2006 | Papers | Contributor(s): Jing Guo
In recent years, significant progress in understanding the physics of carbon nanotube
electronic devices and in identifying potential applications has occurred. In a nanotube,
Nanoscale MOSFETs: Physics, Simulation and Design
26 Oct 2006 | Papers | Contributor(s): Zhibin Ren
This thesis discusses device physics, modeling and design issues of nanoscale
transistors at the quantum level. The principle topics addressed in this report are 1) an
Device Physics and Simulation of Silicon Nanowire Transistors
28 Sep 2006 | Papers | Contributor(s): Jing Wang
As the conventional silicon metal-oxide-semiconductor field-effect transistor
(MOSFET) approaches its scaling limits, many novel device structures are being
extensively explored. Among them,...
Nanoscale Device Modeling: From MOSFETs to Molecules
21 Sep 2006 | Papers | Contributor(s): Prashant Subhash Damle
This thesis presents a rigorous yet practical approach to model quantum transport in nanoscale electronic devices.
As convetional metal oxide semiconductor devices shrink below the one hundred...
Exploring New Channel Materials for Nanoscale CMOS
4.5 out of 5 stars
21 May 2006 | Papers | Contributor(s): Anisur Rahman
The improved transport properties of new channel materials, such as Ge and III-V semiconductors, along with new device designs, such as dual gate, tri gate or FinFETs, are expected to enhance the...