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A Matlab 1D-Poisson-drift-diffusion simulator for semiconductor devices
04 Mar 2024 | | Contributor(s):: Chien-Ting Tung
A Matlab 1D-Poisson-Drift-Diffusion solver that can simulate basic semiconductor devies such as PN diode, Schottky diode, MOS capacitor... It solves Poisson-Drift-Diffusion with finite difference method, Slotboom variable, and Gummel iteration. I provide 4 examples: PN diode,...
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ECE 606 L20.1: PN Diode - Band Diagram with Applied Bias
20 Jul 2023 | | Contributor(s):: Gerhard Klimeck
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ECE 606 L20.2: PN Diode - Derivation of the Forward Bias Formula
20 Jul 2023 | | Contributor(s):: Gerhard Klimeck
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ECE 606 L20.3: PN Diode - Forward Bias - Non-Linear Regime
20 Jul 2023 | | Contributor(s):: Gerhard Klimeck
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ECE 606 L20.4: PN Diode - Non-Ideal Effects
20 Jul 2023 | | Contributor(s):: Gerhard Klimeck
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ECE 606 L21.1: PN Diode - Conductance and Series Resistance
20 Jul 2023 | | Contributor(s):: Gerhard Klimeck
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ECE 606 L21.2: PN Diode - Majority Carrier Junction Capacitance
20 Jul 2023 | | Contributor(s):: Gerhard Klimeck
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ECE 606 L21.3: PN Diode - Minority Carrier Diffusion Capacitance
20 Jul 2023 | | Contributor(s):: Gerhard Klimeck
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ECE 606 L22.1: PN Diode - Charge Control Model
20 Jul 2023 | | Contributor(s):: Gerhard Klimeck
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ECE 606 L22.2: PN Diode - Turn-Off and Turn-On Characteristics
20 Jul 2023 | | Contributor(s):: Gerhard Klimeck
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ECE 606 L22.3: PN Diode - Steady-State Expression From Charge Continuity
20 Jul 2023 | | Contributor(s):: Gerhard Klimeck
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How to convert to a PIN Diode?
Q&A|Closed | Responses: 1
Is it possible to add the intrinsic layer in order to observe characteristics of a PIN diode instead of a PN diode?
https://nanohub.org/answers/question/2456
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09 Demonstration of Vertical GaN PN Diode with Step-etched Triple zone JTE
14 Oct 2020 | | Contributor(s):: Hyun-Soo Lee, Yuxuan Zhang, Zhaoying Chen, Mohammad Wahidur Rahman, Hongping Zhao, Siddharth Rajan
We have demonstrated significantly improved BV of vertical GaN PN diode with STJTE without any degradation of forward characteristics. This is the first demonstration of a step-etched multiple zone edge termination for III-Nitride technology.
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In a forward biased pn junction, how does recombination on the p side lead to current flow? Please explain the mechanism in detail.
Q&A|Closed | Responses: 0
https://nanohub.org/answers/question/2188
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MUHAMMAD HUSSAIN
https://nanohub.org/members/219790
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Alex Boehmke
https://nanohub.org/members/175833
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How exactly PN junction works?
Q&A|Closed | Responses: 0
I know the conventional explanation that electrons moves from n- side and holes from p-side etc but i know that holes is nothing but the absence of electron. So i want to know the working of P-N...
https://nanohub.org/answers/question/1341
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Neutron Induced Fission Betavoltaic Battery
11 Apr 2012 | | Contributor(s):: Marvin Tan
A betavoltaic battery having layers of fissile radioisotopes 8, moderating material 7, beta-decaying radioisotopes 6, and semiconductor diode 4 & 5 adjacently stacked one above another, is proposed. Neutrons produced by the chain reaction in the fissile radioisotope 8 are slowed down by the...
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ACUTE - PN Diode Modeling
08 Jul 2011 | | Contributor(s):: Dragica Vasileska, Gerhard Klimeck
In this assignment, starting from an equilibrium Poisson equation solver for pn-diode, students are required to develop a complete 1D drift-diffusion simulator using the lecture materials provided as part of the ACUTE tool-based curricula.
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Solve a Challenge for a PN Diode
08 Jun 2010 | | Contributor(s):: Dragica Vasileska, Gerhard Klimeck
This is SOLVE A CHALLENGE PROBLEM for pn-diodes.