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On the Two to Three Dimensional Growth Transition in Strained Silicon Germanium Thin Films
02 Feb 2012 | | Contributor(s):: Brian Demczyk
Utilizing a model adapted from classical nucleation theory , we calculate a "critical thickness" for island formation, taking into account the surfaceenergies of the deposit and the substrate and the elastic modulus of the deposit, to which experimental results for CVD grown silicon germanium...