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NEMO5 Overview Presentation
17 Jul 2012 | Online Presentations | Contributor(s): Tillmann Christoph Kubis, Michael Povolotskyi, Jean Michel D Sellier, James Fonseca, Gerhard Klimeck
This presentation gives an overview of the current functionality of NEMO5.
NEMO5 Tutorial 5C: Quantum Dots with Strain and Electronic Wave Functions
18 Jul 2012 | Online Presentations | Contributor(s): Yuling Hsueh
On the Two to Three Dimensional Growth Transition in Strained Silicon Germanium Thin Films
02 Feb 2012 | Papers | Contributor(s): Brian Demczyk
Utilizing a model adapted from classical nucleation theory , we calculate a "critical thickness" for island formation, taking into account the surface
energies of the deposit and the substrate...
Quantum dot - Design a laser
09 Nov 2010 | Teaching Materials | Contributor(s): SungGeun Kim
This document is a real-life problem for the quantum dot lab tool. Basic knowledge on the operation principle of a quantum dot laser is needed to solve this test. The test requires the tested...
Quantum Dot Lab: First-Time User Guide
08 Feb 2011 | Teaching Materials | Contributor(s): SungGeun Kim, Lynn Zentner
This first-time user guide introduces the quantum dot lab tool. It includes an explanation of the input/output interface and the relationship between inputs and outputs of the quantum dot...
Quantum Dot Quantum Computation Simulator
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04 Aug 2012 | Tools | Contributor(s): Brian Sutton
Performs simulations of quantum dot quantum computation using a model Hamiltonian with an on-site magnetic field and modulated inter-dot exchange interaction.
TE/TM polarisation response of InAs/GaAs quantum dot bilayers
22 Oct 2015 | Presentation Materials | Contributor(s): Muhammad Usman
Quantum dot bilayers are strong candidates for the design of telecom devices working at 1300 nm wavelength range. Here we analyse - both experimentally and theoretically - their optical and...
Why quantum dot simulation domain must contain multi-million atoms?
11 Jan 2013 | Online Presentations | Contributor(s): Muhammad Usman
The InGaAs quantum dots obtained from the self-assembly growth process are heavily strained. The long-range strain and piezoelectric fields significantly modifies the electronic structure of the...