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TE/TM polarisation response of InAs/GaAs quantum dot bilayers
22 Oct 2015 | Presentation Materials | Contributor(s): Muhammad Usman
Quantum dot bilayers are strong candidates for the design of telecom devices working at 1300 nm wavelength range. Here we analyse - both experimentally and theoretically - their optical and...
Fahad Al Mamun
Thien Minh Nguyen
Quantum Dot Lab Demonstration: Pyramidal Qdots
28 Aug 2014 |
Posted by Tanya Faltens
Nano 101 Quantum Dots
How to start for solving for a single quantum dot in a p-n junction?
Closed | Responses: 0
I have been assigned to build a simulator for a single quantum dot inside a p-n junction. I am supposed to find the eigenstates, absorption spectra. I have written the codes for a Single...
can anyone please help me by providing self consistent schrodinger poisson’s equation for 1.55um Quantum dot Laser?
I am working on Quantum Dot Laser. I need to know what is the appropriate Schrodinger Poisson’s equation for 1.55um QD Laser. I need to solve Schrodinger Poisson’s equation. I am...
Why quantum dot simulation domain must contain multi-million atoms?
11 Jan 2013 | Online Presentations | Contributor(s): Muhammad Usman
The InGaAs quantum dots obtained from the self-assembly growth process are heavily strained. The long-range strain and piezoelectric fields significantly modifies the electronic structure of the...
Quantum Dot Quantum Computation Simulator
0.0 out of 5 stars
04 Aug 2012 | Tools | Contributor(s): Brian Sutton
Performs simulations of quantum dot quantum computation using a model Hamiltonian with an on-site magnetic field and modulated inter-dot exchange interaction.
NEMO5 Tutorial 5C: Quantum Dots with Strain and Electronic Wave Functions
18 Jul 2012 | Online Presentations | Contributor(s): Yuling Hsueh
NEMO5 Overview Presentation
17 Jul 2012 | Online Presentations | Contributor(s): Tillmann Christoph Kubis, Michael Povolotskyi, Jean Michel D Sellier, James Fonseca, Gerhard Klimeck
This presentation gives an overview of the current functionality of NEMO5.
On the Two to Three Dimensional Growth Transition in Strained Silicon Germanium Thin Films
02 Feb 2012 | Papers | Contributor(s): Brian Demczyk
Utilizing a model adapted from classical nucleation theory , we calculate a "critical thickness" for island formation, taking into account the surface
energies of the deposit and the substrate...
Quantum dot transistor
Designing of quantum dot transistor.(single electron transistor).the source is connected to the drain via quantum dot, which acts as an island. The quantum dot is controlled by gate...
Quantum Dot Lab Learning Materials
By completing the Quantum Dot Lab, users will be able to a) understand the 3D confinement of carriers in a quantum dot, b) describe effects of geometry of a quantum dot on the energy states of...