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Quantum dots have a small, countable number of electrons confined in a small space. Their electrons are confined by having a tiny bit of conducting material surrounded on all sides by an insulating material. If the insulator is strong enough, and the conducting volume is small enough, then the confinement will force the electrons to have discrete (quantized) energy levels. These energy levels can influence the device behavior at a macroscopic scale, showing up, for example, as peaks in the conductance. Because of the quantized energy levels, quantum dots have been called "artificial atoms." Neighboring, weakly-coupled quantum dots have been called "artificial molecules."
Learn more about quantum dots from the many resources on this site, listed below. More information on Quantum dots can be found here.
Valley Dependent g-factors in Silicon: Role of Spin-Orbit and Micromagnets
13 Dec 2016 | | Contributor(s):: Rajib Rahman
In this talk I will show that spin splittings in silicon quantum dots are inherently valley-dependent. Interface disorder, such as monoatomic steps, can strongly affect the intrinsic spin-orbit coupling and can cause device-to-device variations in g-factors. I will also describe the anisotropy...
E304 L8.1.3: Nanophotonics - Quantum Dots
15 Jun 2016 |
Screening Effect on Electric Field Produced by Spontaneous Polarization in ZnO Quantum Dot in Electrolyte
05 Jan 2016 | | Contributor(s):: Xinia Meshik, Min S. Choi, Mitra Dutta, Michael Stroscio
IWCE 2015 presentation. in this paper, the calculation of the strength of the electrostatic field produced by zno quantum dots due to the spontaneous polarization in a physiological electrolyte and its application on retinal horizontal cells are presented.
07 May 2015 | | Contributor(s):: Sebastien Maeder, NACK Network
OutlineIntroductionQuantum ConfinementQD SynthesisColloidal MethodsEpitaxial GrowthApplicationsBiologicalLight EmittersAdditionalApplications
Excited State Spectroscopy of a Quantum Dot Molecule
11 Jan 2013 | | Contributor(s):: Muhammad Usman
Atomistic electronic structure calculations are performed to study the coherent inter-dot couplings of the electronic states in a single InGaAs quantum dot molecule. The experimentally observed excitonic spectrum by Krenner et al (Phys. Rev. Lett. 94 057402, 2005) is quantitatively reproduced,...
NEMO5 Tutorial 5A: Devi ce Simulation - Quantum Dots
17 Jul 2012 | | Contributor(s):: Jean Michel D Sellier
This presentation introduces the capabilities of NEMO5 to simulate quantum dots.
Quantum Dot based Photonic Devices
01 Apr 2012 | | Contributor(s):: Muhammad Usman
Deployment of nanometer-sized semiconductor quantum dots (QDs) in the active region ofphotonic devices such as lasers, semiconductor optical amplifiers (SOA's), photo-detectors etc.for the next generation communication systems offers unique characteristics such astemperature-insensitivity, high...
Polarization Response of Multi-layer InAs Quantum Dot Stacks
25 Oct 2011 | | Contributor(s):: Muhammad Usman
Recent experimental measurements, without any theoretical guidance, showed that isotropic polarization response can be achieved by increasing the number of QD layers in a QD stack. In this work, we analyse the polarization response of multi-layer quantum dot stacks containing up to nine quantum...
BME 695L Lecture 5: Nanomaterials for Core Design
03 Oct 2011 | | Contributor(s):: James Leary
See references below for related reading.5.1 Introduction5.1.1 core building blocks5.1.2 functional cores5.1.3 functionalizing the core surface5.2 Ferric...
The History of Semiconductor Heterostructures Research: From Early Double Heterostructure Concept to Modern Quantum Dot Structures
11 Jul 2011 | | Contributor(s):: Zhores I. Alferov
It would be very difficult today to imagine solid-state physics without semiconductor heterostructures. Semiconductor heterostructures and especially double heterostructures, including quantum wells, quantum wires and quantum dots, currently comprise the object of investigation of two thirds of...
Illinois ECE598XL Semiconductor Nanotechnology - 3 - Quantum Dots: Formation
27 Jun 2011 | | Contributor(s):: Xiuling Li
Tutorial 4b: Introduction to the NEMO3D Tool - Electronic Structure and Transport in 3D
29 Mar 2011 | | Contributor(s):: Gerhard Klimeck
Electronic Structure and Transport in 3D - Quantum Dots, Nanowires and Ultra-Thin Body Transistors
Atomistic Modeling and Simulation Tools for Nanoelectronics and their Deployment on nanoHUB.org
16 Dec 2010 | | Contributor(s):: Gerhard Klimeck
At the nanometer scale the concepts of device and material meet and a new device is a new material and vice versa. While atomistic device representations are novel to device physicists, the semiconductor materials modeling community usually treats infinitely periodic structures. Two electronic...
Nanoelectronic Modeling Lecture 34: Alloy Disorder in Quantum Dots
05 Aug 2010 | | Contributor(s):: Gerhard Klimeck, Timothy Boykin, Chris Bowen
This presentation discusses the consequences of Alloy Disorder in strained InGaAs Quantum Dots Reminder of the origin of bandstructure and bandstructure engineeringWhat happens when there is disorder?Concept of disorder in the local bandstructureConfiguration noise, concentration noise,...
Nanoelectronic Modeling Lecture 32: Strain Layer Design through Quantum Dot TCAD
04 Aug 2010 | | Contributor(s):: Gerhard Klimeck, Muhammad Usman
This presentation demonstrates the utilization of NEMO3D to understand complex experimental data of embedded InAs quantum dots that are selectively overgrown with a strain reducing InGaAs layer. Different alloy concentrations of the strain layer tune the optical emission and absorption...
Nanoelectronic Modeling Lecture 31a: Long-Range Strain in InGaAs Quantum Dots
04 Aug 2010 | | Contributor(s):: Gerhard Klimeck
This presentation demonstrates the importance of long-range strain in quantum dotsNumerical analysis of the importance of the buffer around the central quantum dot - local band edges – vertical and horizontal extension of the bufferControlled overgrowth can tune the electron energies in the...
Nanoelectronic Modeling Lecture 29: Introduction to the NEMO3D Tool
This presentation provides a very high level software overview of NEMO3D. The items discussed are:Modeling Agenda and MotivationTight-Binding Motivation and basic formula expressionsTight binding representation of strainSoftware structureNEMO3D algorithm flow NEMO3D parallelization scheme –...
Nanoelectronic Modeling Lecture 28: Introduction to Quantum Dots and Modeling Needs/Requirements
20 Jul 2010 | | Contributor(s):: Gerhard Klimeck
This presentation provides a very high level software overview of NEMO1D.Learning Objectives:This lecture provides a very high level overview of quantum dots. The main issues and questions that are addressed are:Length scale of quantum dotsDefinition of a quantum dotQuantum dot examples and...
Nanoelectronic Modeling: Exercises 1-3 - Barrier Structures, RTDs, and Quantum Dots
27 Jan 2010 | | Contributor(s):: Gerhard Klimeck
Exercises:Barrier StructuresUses: Piece-Wise Constant Potential Barrier ToolResonant Tunneling DiodesUses: Resonant Tunneling Diode Simulation with NEGF • Hartree calculation • Thomas Fermi potentialQuantum DotsUses: Quantum Dot Lab • pyramidal dot
Nanobiotechnology – a different perspective
out of 5 stars
22 Jul 2008 | | Contributor(s):: Murali Sastry
The study of the synthesis, exotic properties, assembly/packaging and potential commercial application of nanomaterials is an extremely important topic of research that is expected to have far-reaching global impact. The focus of my talk will be on an emerging branch of nanotechnology that...