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Quantum dots have a small, countable number of electrons confined in a small space. Their electrons are confined by having a tiny bit of conducting material surrounded on all sides by an insulating material. If the insulator is strong enough, and the conducting volume is small enough, then the confinement will force the electrons to have discrete (quantized) energy levels. These energy levels can influence the device behavior at a macroscopic scale, showing up, for example, as peaks in the conductance. Because of the quantized energy levels, quantum dots have been called "artificial atoms." Neighboring, weakly-coupled quantum dots have been called "artificial molecules."
Learn more about quantum dots from the many resources on this site, listed below. More information on Quantum dots can be found here.
Structure and Morphology of Silicon Germanium Thin Films
30 Dec 2013 | Papers | Contributor(s): Brian Demczyk
Single layer silicon and germanium films as well as nominally 50-50 silicon-germanium alloys were deposited on single crystal silicon and germanium (001) and (111) substrates by ultrahigh vacuum...
NEMO3D User Guide for Quantum Dot Simulations
29 Nov 2011 | Papers | Contributor(s): M. Usman, Gerhard Klimeck
NEMO 3D is a large and complex simulator; and understanding of its source code requires considerable knowledge of quantum mechanics, condensed matter theory, and parallel programming.
Modeling the quantum dot growth in the continuum approximation
12 Jan 2011 | Papers | Contributor(s): Peter Cendula
Quantum dots can grow spontaneously during molecular beam epitaxy of
two materials with different lattice parameters, Stranski-Krastanow growth mode.
We study a mathematical model based on the...
Development of a Nanoelectronic 3-D (NEMO 3-D ) Simulator for Multimillion Atom Simulations and Its Application to Alloyed Quantum Dots
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14 Jan 2008 | Papers | Contributor(s): Gerhard Klimeck, Timothy Boykin
Material layers with a thickness of a few nanometers are common-place in today’s semiconductor
devices. Before long, device fabrication methods will reach a point at which the other two...