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Quantum dots have a small, countable number of electrons confined in a small space. Their electrons are confined by having a tiny bit of conducting material surrounded on all sides by an insulating material. If the insulator is strong enough, and the conducting volume is small enough, then the confinement will force the electrons to have discrete (quantized) energy levels. These energy levels can influence the device behavior at a macroscopic scale, showing up, for example, as peaks in the conductance. Because of the quantized energy levels, quantum dots have been called "artificial atoms." Neighboring, weakly-coupled quantum dots have been called "artificial molecules."
Learn more about quantum dots from the many resources on this site, listed below. More information on Quantum dots can be found here.
Synthesis and Characterization of CdSe Qunatum Dots
11 Jan 2017 | Teaching Materials | Contributor(s): Nicholas Blake
In this laboratory, students will study how surfactant-based chemistry can be used to synthesize CdSe quantum dots and study how the size of the quantum dots can be controlled by varying reaction...
Valley Dependent g-factors in Silicon: Role of Spin-Orbit and Micromagnets
13 Dec 2016 | Online Presentations | Contributor(s): Rajib Rahman
In this talk I will show that spin splittings in silicon quantum dots are inherently valley-dependent. Interface disorder, such as monoatomic steps, can strongly affect the intrinsic spin-orbit...
E304 L8.1.3: Nanophotonics - Quantum Dots
15 Jun 2016 | Online Presentations
Universal Behavior of Strain in Self-assembled Quantum Dots
05 May 2016 | Downloads | Contributor(s): Hesameddin Ilatikhameneh, Tarek Ahmed Ameen, Gerhard Klimeck, Rajib Rahman
This resource contains the universal behavior strain files produced by Nemo5. Attached also a Matlab script that can utilize the these compact descriptive files to produce the full strain...
Screening Effect on Electric Field Produced by Spontaneous Polarization in ZnO Quantum Dot in Electrolyte
05 Jan 2016 | Online Presentations | Contributor(s): Min S. Choi, Michael Stroscio
IWCE 2015 presentation. in this paper, the calculation of the strength of the electrostatic field produced by zno quantum dots due to the spontaneous polarization in a physiological...
Structure and Morphology of Silicon-Germanium Thin Films
07 Feb 2015 | Presentation Materials | Contributor(s): Brian Demczyk
This presentation describes the growth of (Si,Ge & SiGe) thin films on Si and Ge (001) and (111) substrates by ultrahigh vacuum chemical vapor deposition (UHVCVD). Thin films were...
Structure and Morphology of Silicon Germanium Thin Films
30 Dec 2013 | Papers | Contributor(s): Brian Demczyk
Single layer silicon and germanium films as well as nominally 50-50 silicon-germanium alloys were deposited on single crystal silicon and germanium (001) and (111) substrates by ultrahigh vacuum...
Excited State Spectroscopy of a Quantum Dot Molecule
11 Jan 2013 | Online Presentations | Contributor(s): Muhammad Usman
Atomistic electronic structure calculations are performed to study the coherent inter-dot couplings of the electronic states in a single InGaAs quantum dot molecule. The experimentally observed...
Quantum Dot Quantum Computation Simulator
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17 Sep 2012 | Tools | Contributor(s): Brian Sutton
Performs simulations of quantum dot quantum computation using a model Hamiltonian with an on-site magnetic field and modulated inter-dot exchange interaction.
NEMO5 Tutorial 5A: Devi ce Simulation - Quantum Dots
17 Jul 2012 | Online Presentations | Contributor(s): Jean Michel D Sellier
This presentation introduces the capabilities of NEMO5 to simulate quantum dots.
Quantum Dot based Photonic Devices
01 Apr 2012 | Online Presentations | Contributor(s): Muhammad Usman
Deployment of nanometer-sized semiconductor quantum dots (QDs) in the active region of
photonic devices such as lasers, semiconductor optical amplifiers (SOA's), photo-detectors etc.
NEMO3D User Guide for Quantum Dot Simulations
29 Nov 2011 | Papers | Contributor(s): M. Usman, Gerhard Klimeck
NEMO 3D is a large and complex simulator; and understanding of its source code requires considerable knowledge of quantum mechanics, condensed matter theory, and parallel programming.
Polarization Response of Multi-layer InAs Quantum Dot Stacks
25 Oct 2011 | Online Presentations | Contributor(s): Muhammad Usman
Recent experimental measurements, without any theoretical guidance, showed that isotropic polarization response can be achieved by increasing the number of QD layers in a QD stack. In this work,...
BME 695L Lecture 5: Nanomaterials for Core Design
03 Oct 2011 | Online Presentations | Contributor(s): James Leary
See references below for related reading.
5.1.1 core building blocks
The History of Semiconductor Heterostructures Research: From Early Double Heterostructure Concept to Modern Quantum Dot Structures
11 Jul 2011 | Online Presentations | Contributor(s): Zhores I. Alferov
It would be very difficult today to imagine solid-state physics without semiconductor heterostructures. Semiconductor heterostructures and especially double heterostructures, including quantum...
Illinois ECE598XL Semiconductor Nanotechnology - 3 - Quantum Dots: Formation
27 Jun 2011 | Online Presentations | Contributor(s): Xiuling Li
Quantitative Modeling and Simulation of Quantum Dots
18 Apr 2011 | Presentation Materials | Contributor(s): Muhammad Usman
Quantum dots grown by self-assembly process are typically constructed by 50,000 to 5,000,000 structural atoms which confine a small, countable number of extra electrons or holes in a space that is...
Tutorial 4b: Introduction to the NEMO3D Tool - Electronic Structure and Transport in 3D
29 Mar 2011 | Online Presentations | Contributor(s): Gerhard Klimeck
Electronic Structure and Transport in 3D - Quantum Dots, Nanowires and Ultra-Thin Body Transistors
Quantum Dot Wave Function (Quantum Dot Lab)
02 Feb 2011 | Animations | Contributor(s): Gerhard Klimeck, David S. Ebert, Wei Qiao
Electron density of an artificial atom. The animation sequence shows various electronic states in an Indium Arsenide (InAs)/Gallium Arsenide (GaAs) self-assembled quantum dot.
Self-Assembled Quantum Dot Structure (pyramid)
02 Feb 2011 | Animations | Contributor(s): Gerhard Klimeck, Insoo Woo, Muhammad Usman, David S. Ebert
Pyramidal InAs Quantum dot. The quantum dot is 27 atomic monolayers wide at the base and 15 atomic monolayers tall.