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  1. SCHRED: Exercise 2

    06 Jul 2008 | Teaching Materials | Contributor(s): Dragica Vasileska, Gerhard Klimeck

    In this exercise students examine the doping dependence of the threshold voltage shift in MOS capacitors due to the quantum-mechanical charge description in the, a resource for nanoscience and nanotechnology, is supported by the National Science Foundation and other funding agencies. Any opinions, findings, and conclusions or recommendations expressed in this material are those of the author(s) and do not necessarily reflect the views of the National Science Foundation.