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Questions & Answers (1-5 of 5) feed

  1. How to model metal/source drain MOSFET in nanoscale device simulators?

    Open | Responses: 1

    Hello; I want to model metal source/drain MOSFET in nanoscale device simulators. How can I define schottky contact at source/drain channel interface? Thanks

    http://nanohub.org/answers/question/854

  2. de Broglie wavelength

    Open | Responses: 1

    Regarding our discussion yesterday, you mentioned that DeBroglie wavelength in metals is approx. 1A. I understand the relation of phase and momentum relaxation lengths to the conductance. Also …

    http://nanohub.org/answers/question/7

  3. Time-dependent NEGF

    Open | Responses: 1

    In the time-dependent NEGF equation, given a sigma_in(t,t') due to the dot, I am getting an I-V equation that is making it difficult for me to group terms. For instance, looking at the analogue of …

    http://nanohub.org/answers/question/6

  4. Charging energy

    Open | Responses: 1

    >About the multi-electron picture you have been talking, >I would like to know, if I put two electrons at the >same time from the source to the channel rather than >putting one electron after …

    http://nanohub.org/answers/question/5

  5. Degeneracy factor for holes

    Open | Responses: 1

    You calculate the occupation of donor states in your book by requiring that only (00, 01, 10) states are possible. Therefore, the probability that donor states are unoccupied is: ND+ = ND*f_00 = …

    http://nanohub.org/answers/question/3

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