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Hossain Ahmad Iztihad
Modeling Quantum Transport in Nanoscale Transistors
28 Jun 2013 | | Contributor(s):: Ramesh Venugopal
As critical transistor dimensions scale below the 100 nm (nanoscale) regime, quantum mechanical effects begin to manifest themselves and affect important device performance metrics. Therefore, simulation tools which can be applied to design nanoscale transistors in the future, require new theory...
Nanoscale MOSFETS: Physics, Simulation and Design
28 Jun 2013 | | Contributor(s):: Zhibin Ren
This thesis discusses device physics, modeling and design issues of nanoscale transistors at the quantum level. The principle topics addressed in this report are 1) an implementation of appropriate physics and methodology in device modeling, 2)development of a new TCAD (technology computer aided...
Mark Thomas Lusk
NEMO5 Latest Version Source
19 Mar 2013 | | Contributor(s):: James Fonseca, Michael Povolotskyi, Tillmann Christoph Kubis, Jean Michel D Sellier
Revision 24185 uploaded on December 16th, 2016.Revision 23455 updated on August 8th, 2016 Revision 21229 updated on Sept 2, 2015. Use this if you want to build NEMO5 from source.
How to model electrical transport in large conductors?
Closed | Responses: 0
For modeling electrical transport in large conductors one has to consider the inter unit coupling energy(t) as the reason behind the level broadening in the unit cells.
ECE 606 Lecture 25: Modern MOSFETs
03 Dec 2012 | | Contributor(s):: Gerhard Klimeck
Nanoscale Transistors Lecture 5: Transport - ballistic, diffusive, non-local, and quantum
19 Jul 2012 | | Contributor(s):: Mark Lundstrom
NEMO5 Tutorial 6B: Device Simulation - Quantum Transport in GaSb/InAs Tunneling FET
16 Jul 2012 | | Contributor(s):: Yu He
NEMO5 Materials Database
25 Mar 2012 |
Revision 21229 for use on Conte August 4th, 2015
NEMO5 Public Examples
07 Mar 2012 | | Contributor(s):: James Fonseca
Public examples have been removed. Please see the regression test resource https://nanohub.org/resources/19171revision 8163Updated August 8, 2012bulk_Cu NCN_summer_school_2012Python_solverbulk_GaAs_band_structure Nitrides...
NEMO 5 Latest Version Executable
13 Feb 2012 | | Contributor(s):: Gerhard Klimeck
This tarball contains the latest version of a statically compiled NEMO5 for x86 64 bit linux. It also includes the materials database.revision 13611 uploaded Jan 10, 2014
ECE 656 Lecture 35: Introduction to Quantum Transport in Devices
25 Jan 2012 | | Contributor(s):: Mark Lundstrom
Outline:IntroductionSemiclassical ballistic transportQuantum ballistic transportCarrier scattering in quantum transportDiscussionSummary
Dissipative Quantum Transport in Semiconductor Nanostructures
28 Dec 2011 | | Contributor(s):: Peter Greck
In this work, we investigate dissipative quantum transport properties of an open system. After presenting the background of ballistic quantum transport calculations, a simple scattering mechanism, called Büttiker Probes, is introduced. Then, we assess the properties of the Büttiker Probe model...
Elvis Flaviano Arguelles
How to model metal/source drain MOSFET in nanoscale device simulators?
Open | Responses: 1
Hello; I want to model metal source/drain MOSFET in nanoscale device simulators. How can I define schottky contact at source/drain channel interface?